• Journal of information and communication convergence engineering
• /
• v.7 no.1
• /
• pp.57-61
• /
• 2009

This paper has presented the subthreshold current model of FinFET using the potential variation in the doped channel based on the analytical solution of three dimensional Poisson's equation. The model has been verified by the comparison with the data from 3D numerical device simulator. The variation of subthreshold current with front and back gate bias has been studied. The variation of subthreshold swing and threshold voltage with front and back gate bias has been investigated.

• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.34D no.8
• /
• pp.15-25
• /
• 1997

The integration method of carier concentrations to redcue the discretization error of th box integratio method used in the discretization of the three-dimensional poisson's equation is presented. The carrier concentration is approximated in the closed form as an exponential function of the linearly varying potential in the element. The presented method is implemented in the three-dimensional poisson's equation solver running under the windows 95. The accuracy and the convergence chaacteristics of the three-dimensional poisson's equation solver are compared with those of DAVINCI for the PN junction diode and the n-MOSFET under the thermal equilibrium and the DC reverse bias. The potential distributions of the simulatied devices from the three-dimensional poisson's equation solver, compared with those of DAVINCI, has a relative error within 2.8%. The average number of iterations needed to obtain the solution of the PN junction diode and the n-MOSFET using the presented method are 11.47 and 11.16 while the those of DAVINCI are 21.73 and 23.0 respectively.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.14 no.4
• /
• pp.451-456
• /
• 2014

A compact model of a depletion-mode silicon-nanowire (Si-NW) pH sensor is proposed. This drain current model is obtained from the Pao-Sah integral and the continuous charge-based model, which is derived by applying the parabolic potential approximation to the Poisson's equation in the cylindrical coordinate system. The threshold-voltage shift in the drain-current model is obtained by solving the nonlinear Poisson-Boltzmann equation for the electrolyte. The simulation results obtained from the proposed drain-current model for the Si-NW field-effect transistor (SiNWFET) agree well with those of the three-dimensional (3D) device simulation, and those from the Si-NW pH sensor model also agree with the experimental data.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.13 no.11
• /
• pp.2373-2377
• /
• 2009

In this paper, the threshold voltage characteristics have been analyzed using three dimensional Poisson's equation for FinFET. The FinFET is extensively been studing since it can reduce the short channel effects as the nano device. We have presented the short channel effects such as subthreshold swing and threshold voltage for PinFET, using the analytical three dimensional Poisson's equation. We have analyzed for channel length, thickness and width to consider the structural characteristics for FinFET. Using this model, the subthreshold swing and threshold voltage have been analyzed for FinFET since the potential and transport model of this analytical three dimensional Poisson's equation is verified as comparing with those of the numerical three dimensional Poisson's equation.

• Journal of the Society of Naval Architects of Korea
• /
• v.36 no.1
• /
• pp.70-81
• /
• 1999

To predict the viscous boundary layers and wakes around a ship, the CFD techniques are commonly used. For the efficient application of CFD tools to practical hull farms, a 3-D field grid generating system is developed. The present grid generating system utilizes the solution of Poisson equation. Sorenson's method developed for 2-D is extended into 3-D to provide the forcing functions controling grid interval and orthogonality on hull surface, etc. The weighting function scheme is used for the discretization of the Poisson equation and the linear equations are solved by using MSIP salver. The trans-finite interpolation is also employed to assure the smooth transition into boundary surface grids. To rove the applicability, the field grid systems around a container ship and a VLCC with bow and stem bulb are illustrated, and the procedures for generating 3-D field grid system are explained.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.5 no.3
• /
• pp.173-181
• /
• 2005

A new two dimensional (2-D) model for the potential distribution of fully depleted short-channel ion-implanted silicon MESFET's has been presented in this paper. The solution of the 2-D Poisson's equation has been considered as the superposition of the solutions of 1-D Poisson's equation in the lateral direction and the 2-D homogeneous Laplace equation with suitable boundary conditions. The minimum bottom potential at the interface of the depletion region due to the metal-semiconductor junction at the Schottky gate and depletion region due to the substrate-channel junction has been used to investigate the drain-induced barrier lowering (DIBL) and its effects on the threshold voltage of the device. Numerical results have been presented for the potential distribution and threshold voltage for different parameters such as the channel length, drain-source voltage, and implanted-dose and silicon film thickness.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.13 no.4
• /
• pp.747-752
• /
• 2009

Three dimensional(3D) Poisson's equation is used to calculate the potential variation for FinFET in the channel to analyze subthreshold current and short channel effect(SCE). The analytical model has been presented to lessen calculating time and understand the relationship of parameters. The accuracy of this model has been verified by the data from 3D numerical device simulator and variation for dimension parameters has been explained. The model has been developed to obtain channel potential of FinFET according to channel doping and to calculate subthreshold current and threshold voltage.

• Structural Engineering and Mechanics
• /
• v.2 no.3
• /
• pp.245-256
• /
• 1994

A new axisymmetric crack model is proposed on the basis of p-version of the finite element method limited to theory of small scale yielding. To this end, axisymmetric stress element is formulated by integrals of Legendre polynomial which has hierarchical nature and orthogonality relationship. The virtual crack extension method has been adopted to calculate the stress intensity factors for 3-D axisymmetric cracked bodies where the potential energy change as a function of position along the crack front is calculated. The sensitivity with respect to the aspect ratio and Poisson locking has been tested to ascertain the robustness of p-version axisymmetric element. Also, the limit value that is an exact solution obtained by FEM when degree of freedom is infinite can be estimated using the extrapolation equation based on error prediction in energy norm. Numerical examples of thick-walled cylinder, axisymmetric crack in a round bar and internal part-thorough cracked pipes are tested with high precision.

• Journal of information and communication convergence engineering
• /
• v.8 no.1
• /
• pp.107-111
• /
• 2010

This paper has presented the dependence of the threshold voltage on back gate bias and drain voltage for FinFET. The FinFET has three gates such as the front gate, side and back gate. Threshold voltage is defined as the front gate bias when drain current is 1 micro ampere as the onset of the turn-on condition. In this paper threshold voltage is investigated into the analytical potential model derived from three dimensional Poisson's equation with the variation of the back gate bias and drain voltage. The threshold voltage of a transistor is one of the key parameters in the design of CMOS circuits. The threshold voltage, which described the degree of short channel effects, has been extensively investigated. As known from the down scaling rules, the threshold voltage has been presented in the case that drain voltage is the 1.0V above, which is set as the maximum supply voltage, and the drain induced barrier lowing(DIBL), drain bias dependent threshold voltage, is obtained using this model.

• Steel and Composite Structures
• /
• v.25 no.3
• /
• pp.347-360
• /
• 2017

The goal of this study is to fill this apparent gap in the area about vibration analysis of multiwalled carbon nanotubes (MWCNTs) curved panels by providing 3-D vibration analysis results for functionally graded multiwalled carbon nanotubes (FG-MWCNTs) sandwich structure with power-law distribution of nanotube. The effective material properties of the FG-MWCNT structures are estimated using a modified Halpin-Tsai equation. Modified Halpin-Tsai equation was used to evaluate the Young's modulus of MWCNT/epoxy composite samples by the incorporation of an orientation as well as an exponential shape factor in the equation. The exponential shape factor modifies the Halpin-Tsai equation from expressing a straight line to a nonlinear one in the MWCNTs wt% range considered. Also, the mass density and Poisson's ratio of the MWCNT/phenolic composite are considered based on the rule of mixtures. Parametric studies are carried out to highlight the influence of MWCNT volume fraction in the thickness, different types of CNT distribution, boundary conditions and geometrical parameters on vibrational behavior of FG-MWCNT thick curved panels. Because of using two-dimensional generalized differential quadrature method, the present approach makes possible vibration analysis of cylindrical panels with two opposite axial edges simply supported and arbitrary boundary conditions including Free, Simply supported and Clamped at the curved edges. For an overall comprehension on 3-D vibration analysis of sandwich panel, some mode shape contour plots are reported in this research work.