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http://dx.doi.org/10.6109/JKIICE.2009.13.4.747

Potential Distribution Model for FinFET using Three Dimensional Poisson's Equation  

Jung, Hak-Kee (군산대학교 전자공학과)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.13, no.4, 2009 , pp. 747-752 More about this Journal
Abstract
Three dimensional(3D) Poisson's equation is used to calculate the potential variation for FinFET in the channel to analyze subthreshold current and short channel effect(SCE). The analytical model has been presented to lessen calculating time and understand the relationship of parameters. The accuracy of this model has been verified by the data from 3D numerical device simulator and variation for dimension parameters has been explained. The model has been developed to obtain channel potential of FinFET according to channel doping and to calculate subthreshold current and threshold voltage.
Keywords
FinFET; MOSFET; SCE;
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1 D.S.Havaldar, G.Katti, N.DasGupta and A.DasGupta, "Subthreshold Current Model of FinFETs Based on Analytical Solution of 3-D Poisson's Equation," IEEE Trans. Electron Devices, vol. 53, no.4, 2006
2 J.G.Fossum, M.M.Chowdhury, V.P. Trivedi ,T.J.King, Y.K.Choi, J.An and B.Yu,"Physical insights on design and modeling of nanoscale FinFETs," in IEDM Tech. Dig.,pp.679-682, 2003
3 Taurus Medici Davinci User's Guide, Synopsis Inc.,Mountain View, CA, Dec. 2003. V-2003
4 G.Katti, N.DasGupta and A.DasGupta, "Threshold Voltage Model for Mesa-Isolated Small Geometry Fully Depleted SOI MOSFETs Based on Analytical Solution of 3-D Poisson's Equation," IEEE Trans. Electron Devices, vol. 51, no.7, 2004
5 J.P.Colinge, "Multiple-gate SOI MOSFETs," Solid State Electron., vol. 48, no. 6, pp.897-905,2004   DOI   ScienceOn