• Journal of information and communication convergence engineering
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• 제7권1호
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• pp.57-61
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• 2009

This paper has presented the subthreshold current model of FinFET using the potential variation in the doped channel based on the analytical solution of three dimensional Poisson's equation. The model has been verified by the comparison with the data from 3D numerical device simulator. The variation of subthreshold current with front and back gate bias has been studied. The variation of subthreshold swing and threshold voltage with front and back gate bias has been investigated.

• 전자공학회논문지D
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• 제34D권8호
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• pp.15-25
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• 1997

The integration method of carier concentrations to redcue the discretization error of th box integratio method used in the discretization of the three-dimensional poisson's equation is presented. The carrier concentration is approximated in the closed form as an exponential function of the linearly varying potential in the element. The presented method is implemented in the three-dimensional poisson's equation solver running under the windows 95. The accuracy and the convergence chaacteristics of the three-dimensional poisson's equation solver are compared with those of DAVINCI for the PN junction diode and the n-MOSFET under the thermal equilibrium and the DC reverse bias. The potential distributions of the simulatied devices from the three-dimensional poisson's equation solver, compared with those of DAVINCI, has a relative error within 2.8%. The average number of iterations needed to obtain the solution of the PN junction diode and the n-MOSFET using the presented method are 11.47 and 11.16 while the those of DAVINCI are 21.73 and 23.0 respectively.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권4호
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• pp.451-456
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• 2014

A compact model of a depletion-mode silicon-nanowire (Si-NW) pH sensor is proposed. This drain current model is obtained from the Pao-Sah integral and the continuous charge-based model, which is derived by applying the parabolic potential approximation to the Poisson's equation in the cylindrical coordinate system. The threshold-voltage shift in the drain-current model is obtained by solving the nonlinear Poisson-Boltzmann equation for the electrolyte. The simulation results obtained from the proposed drain-current model for the Si-NW field-effect transistor (SiNWFET) agree well with those of the three-dimensional (3D) device simulation, and those from the Si-NW pH sensor model also agree with the experimental data.

• 한국정보통신학회논문지
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• 제13권11호
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• pp.2373-2377
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• 2009

본 연구에서는 3차원 포아송방정식을 이용하여 FinFET의 문턱전압특성을 분석하였다. FinFET는 차세대 나노소자로서 단채널효과를 감소시킬 수 있다는 장점 때문에 많은 연구가 진행중에 있다. 이에 FinFET에서 단채널효과로서 잘 알려진 문턱 전압이하 스윙 및 문턱 전압 등을 3차원 포아송방정식의 분석학적 모델로 분석하고자 한다. 나노소자인 FinFET의 구조적 특성을 고찰하기 위하여 채널의 두께, 길이, 폭 등의 크기요소에 따라 분석하였다. 본 논문에서 사용한 분석학적 3차원 포아송방정식의 포텐셜모델 및 전송모델은 여러 논문에서 3차원 수치해석학적 값과 비교하여 그 타당성이 입증되었으므로 이 모델을 이용하여 FinFET의 문턱전압특성 및 문턱전압이하 특성을 분석하였다.

• 대한조선학회논문집
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• 제36권1호
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• pp.70-81
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• 1999

선체주위의 점성유동을 계산하기 위해서는 수치계산을 위한 3차원 공간 격자계가 필요하다. 본 논문에서는 타원형 미분 방정식인 Poisson 방정식의 해를 이용하여 3차원 공간 격자계를 구성하는 방법을 개발하였다. 2차원에서 사용되던 Sorenson방법을 3차원으로 확장하여 격자계의 분포 및 교차 각도를 지정하는 함수를 정의하게 하였다. 미분방정식의 해는 weighting function scheme과 modified strongly implicit procedure를 사용하여 구하였고, 3차원 내부 격자계와 경계면과의 매끄러운 연결을 위해 trans-finite interpolation을 이용하였다. 적용예로서 컨테이너 운반선과 대형 유조선 주위의 난류유동 계산을 위한 공간 격자계를 보였다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제5권3호
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• pp.173-181
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• 2005

A new two dimensional (2-D) model for the potential distribution of fully depleted short-channel ion-implanted silicon MESFET's has been presented in this paper. The solution of the 2-D Poisson's equation has been considered as the superposition of the solutions of 1-D Poisson's equation in the lateral direction and the 2-D homogeneous Laplace equation with suitable boundary conditions. The minimum bottom potential at the interface of the depletion region due to the metal-semiconductor junction at the Schottky gate and depletion region due to the substrate-channel junction has been used to investigate the drain-induced barrier lowering (DIBL) and its effects on the threshold voltage of the device. Numerical results have been presented for the potential distribution and threshold voltage for different parameters such as the channel length, drain-source voltage, and implanted-dose and silicon film thickness.

• 한국정보통신학회논문지
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• 제13권4호
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• pp.747-752
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• 2009

본 연구에서는 FinFET에서 문턱전압이하 전류 및 단채널효과를 해석하기 위하여 필수적인 포텐셜분포를 구하기 위하여 3차원 포아송방정식을 이용하고자 한다. 특히 계산시간을 단축시키고 파라미터의 관련성을 이해하기 쉽도록 해석학적 모델을 제시하고자 한다. 이 모델의 정확성을 증명하기 위하여 3차원 수치해석학적 모델과 비교되었으며 소자의 크기파라미터에 따른 변화에 대하여 설명하였다. 특히 채널 도핑여부에 따라 FinFET의 채널 포텐셜을 구하여 향후 문턱전압이하 전류 해석 및 문턱 전압 계산에 이용할 수 있도록 모델을 개발하였다.

• Structural Engineering and Mechanics
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• 제2권3호
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• pp.245-256
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• 1994

A new axisymmetric crack model is proposed on the basis of p-version of the finite element method limited to theory of small scale yielding. To this end, axisymmetric stress element is formulated by integrals of Legendre polynomial which has hierarchical nature and orthogonality relationship. The virtual crack extension method has been adopted to calculate the stress intensity factors for 3-D axisymmetric cracked bodies where the potential energy change as a function of position along the crack front is calculated. The sensitivity with respect to the aspect ratio and Poisson locking has been tested to ascertain the robustness of p-version axisymmetric element. Also, the limit value that is an exact solution obtained by FEM when degree of freedom is infinite can be estimated using the extrapolation equation based on error prediction in energy norm. Numerical examples of thick-walled cylinder, axisymmetric crack in a round bar and internal part-thorough cracked pipes are tested with high precision.

• Journal of information and communication convergence engineering
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• 제8권1호
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• pp.107-111
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• 2010

This paper has presented the dependence of the threshold voltage on back gate bias and drain voltage for FinFET. The FinFET has three gates such as the front gate, side and back gate. Threshold voltage is defined as the front gate bias when drain current is 1 micro ampere as the onset of the turn-on condition. In this paper threshold voltage is investigated into the analytical potential model derived from three dimensional Poisson's equation with the variation of the back gate bias and drain voltage. The threshold voltage of a transistor is one of the key parameters in the design of CMOS circuits. The threshold voltage, which described the degree of short channel effects, has been extensively investigated. As known from the down scaling rules, the threshold voltage has been presented in the case that drain voltage is the 1.0V above, which is set as the maximum supply voltage, and the drain induced barrier lowing(DIBL), drain bias dependent threshold voltage, is obtained using this model.

• Steel and Composite Structures
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• 제25권3호
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• pp.347-360
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• 2017

The goal of this study is to fill this apparent gap in the area about vibration analysis of multiwalled carbon nanotubes (MWCNTs) curved panels by providing 3-D vibration analysis results for functionally graded multiwalled carbon nanotubes (FG-MWCNTs) sandwich structure with power-law distribution of nanotube. The effective material properties of the FG-MWCNT structures are estimated using a modified Halpin-Tsai equation. Modified Halpin-Tsai equation was used to evaluate the Young's modulus of MWCNT/epoxy composite samples by the incorporation of an orientation as well as an exponential shape factor in the equation. The exponential shape factor modifies the Halpin-Tsai equation from expressing a straight line to a nonlinear one in the MWCNTs wt% range considered. Also, the mass density and Poisson's ratio of the MWCNT/phenolic composite are considered based on the rule of mixtures. Parametric studies are carried out to highlight the influence of MWCNT volume fraction in the thickness, different types of CNT distribution, boundary conditions and geometrical parameters on vibrational behavior of FG-MWCNT thick curved panels. Because of using two-dimensional generalized differential quadrature method, the present approach makes possible vibration analysis of cylindrical panels with two opposite axial edges simply supported and arbitrary boundary conditions including Free, Simply supported and Clamped at the curved edges. For an overall comprehension on 3-D vibration analysis of sandwich panel, some mode shape contour plots are reported in this research work.