• 제목/요약/키워드: 3D Package

검색결과 466건 처리시간 0.028초

Characterization and Enhancement of Package O2 Barrier against Oxidative Deterioration of Powdered Infant Formula

  • Jo, Min Gyeong;An, Duck Soon;Lee, Dong Sun
    • 한국포장학회지
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    • 제24권1호
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    • pp.13-16
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    • 2018
  • Powdered infant formula is susceptible to oxidation in the presence of oxygen. Even though the product is usually packaged in nitrogen atmosphere, the oxygen ingress through the package layer may occur in case of flexible pouches and affects the oxidation of the product. $O_2$ barrier of the package is thus important variable to protect the product from oxidative deterioration. $O_2$ barrier property was investigated for aluminum-laminated small pillow packs of $3.5{\times}17.5cm$. Storage temperature and combination of primary and secondary packages were evaluated as variables affecting the barrier for conditions of empty pouch flushed with nitrogen. Apparent oxygen transmission rate of the primary package exposed to air was $2.32{\times}10^{-3}mL\;(STP)\;atm^{-1}\;d^{-1}$ at $30^{\circ}C$ and its temperature dependence could be explained by activation energy of $28.5kJ\;mol^{-1}$ in Arrhenius relationship. The additional secondary package of nylon/PE film containing 20 primary packages was ineffective in modulating package $O_2$ transmission and was only marginally helpful when combined with oxygen scavenger. The same was true in suppressing the product oxidation when the primary package was filled with 14 g of the formula.

TSOP(Thin Small Outline Package) 열변형 개선을 위한 전산모사 분석 (Numerical Analysis for Thermal-deformation Improvement in TSOP(Thin Small Outline Package) by Anti-deflection Adhesives)

  • 김상우;이해중;이효수
    • 마이크로전자및패키징학회지
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    • 제20권3호
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    • pp.31-35
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    • 2013
  • TSOP(Thin Small Outline Package)는 가전제품, 자동차, 모바일, 데스크톱 PC등을 위한 저렴한 비용의 패키지로, 리드 프레임을 사용하는 IC패키지이다. TSOP는 BGA와 flip-chip CSP에 비해 우수한 성능은 아니지만, 저렴한 가격 때문에 많은 분야에 널리 사용되고 있습니다. 그러나, TSOP 패키지에서 몰딩공정 할 때 리드프레임의 열적 처짐 현상이 빈번하게 일어나고, 반도체 다이와 패드 사이의 Au 와이어 떨어짐 현상이 이슈가 되고 있다. 이러한 문제점을 해결하기 위해서는 리드프레임의 구조를 개선하고 낮은 CTE를 갖는 재료로 대체해야 한다. 본 연구에서는 열적 안정성을 갖도록 리드프레임 구조 개선을 위해 수치해석적 방법으로 진행하였다. TSOP 패키지에서 리드프레임의 열적 처짐은 반도체와 다이 사이의 거리(198 um~366 um)에서 안티-디플렉션의 위치에 따라 시뮬레이션을 진행하였다. 안티-디플렉션으로 TSOP 패키지의 열적 처짐은 확실히 개선되는 것을 확인 했다. 안티-디플렉션의 위치가 inside(198 um)일 때 30.738 um 처짐을 보였다. 이러한 결과는 리드프레임의 열적 팽창을 제한하는데 안티-디플렉션이 기여하고 있기 때문이다. 그러므로 리드프레임 패키지에 안티-디플렉션을 적용하게 되면 낮은 CTE를 갖는 재료로 대체하지 않아도 열적 처짐을 향상시킬 수 있음을 기대할 수 있다.

Thermal Performance Analysis for Cu Block and Dense Via-cluster Design of Organic Substrate in Package-On-Package

  • Lim, HoJeong;Jung, GyuIk;Kim, JiHyun;Fuentes, Ruben
    • 마이크로전자및패키징학회지
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    • 제24권4호
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    • pp.91-95
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    • 2017
  • Package-On-Package (PoP) technology is developing toward smaller form factors with high-speed data transfer capabilities to cope with high DDR4x memory capacity. The common application processor (AP) used for PoP devices in smartphones has the bottom package as logic and the top package as memory, which requires both thermally and electrically enhanced functions. Therefore, it is imperative that PoP designs consider both thermal and power distribution network (PDN) issues. Stacked packages have poorer thermal dissipation than single packages. Since the bottom package usually has higher power consumption than the top package, the bottom package impacts the thermal budget of the top package (memory). This paper investigates the thermal and electrical characteristics of PoP designs, particularly the bottom package. Findings include that via and dense via-cluster volume have an important role to lower thermal resistance to the motherboard, which can be an effective way to manage chip hot spots and reduce the thermal impact on the memory package. A Cu block and dense via-cluster layout with an optimal location are proposed to drain the heat from the chip hot spots to motherboard which will enhance thermal and electrical performance at the design stage. The analytical thermal results can be used for design guidelines in 3D packaging.

수직형 Feed-through 갖는 RF-MEMS 소자의 웨이퍼 레벨 패키징 (Wafer Level Packaging of RF-MEMS Devices with Vertical Feed-through)

  • 박윤권;이덕중;박흥우;김훈;이윤희;김철주;주병권
    • 한국전기전자재료학회논문지
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    • 제15권10호
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    • pp.889-895
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    • 2002
  • Wafer level packaging is gain mote momentum as a low cost, high performance solution for RF-MEMS devices. In this work, the flip-chip method was used for the wafer level packaging of RF-MEMS devices on the quartz substrate with low losses. For analyzing the EM (electromagnetic) characteristic of proposed packaging structure, we got the 3D structure simulation using FEM (finite element method). The electric field distribution of CPW and hole feed-through at 3 GHz were concentrated on the hole and the CPW. The reflection loss of the package was totally below 23 dB and the insertion loss that presents the signal transmission characteristic is above 0.06 dB. The 4-inch Pyrex glass was used as a package substrate and it was punched with air-blast with 250${\mu}{\textrm}{m}$ diameter holes. We made the vortical feed-throughs to reduce the electric path length and parasitic parameters. The vias were filled with plating gold. The package substrate was bonded with the silicon substrate with the B-stage epoxy. The loss of the overall package structure was tested with a network analyzer and was within 0.05 dB. This structure can be used for wafer level packaging of not only the RF-MEMS devices but also the MEMS devices.

새로운 형태의 CSP를 이용한 완전 집적화 Ku/K밴드 광대역 증폭기 MMIC (A Fully-integrated Ku/K Broadband Amplifier MMIC Employing a Novel Chip Size Package)

  • 윤영
    • 한국항해항만학회지
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    • 제27권2호
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    • pp.217-221
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    • 2003
  • 본 논문에서는 새로운 형태의 CSP (chip site package)를 이용하여 정합소자 린 바이어스소자를 MMIC상에 완전집적한 Ku/K밴드 광대역 증폭기 MMIC에 관하여 보고한다. 새로운 형태의 CSP에 대해서는 이방성 도전필름인 ACF (anisotropic conductive film)을 이용하였으며, 그 결과 MMIC 패키지 프로세스가 간략화 되었고, CSP MMIC의 저 가격화가 실현되었다. MMIC상에 집적하기 위한 DC 바이어스 용량소자로서는 고유전율의 STO (SrTiO3) 필름 커패시터가 이용되었다. 제작된 CSP MMIC는 광대역 RF동작특성 (12-24 GHz에서 12.5$\pm$1.5 dB의 이득치, -6 dB이하의 반사계수, 18.5$\pm$1.5 dBm의 PldB) 을 보였다. 본 논문은 K 또는 Ku 밴드의 주파수대역에 있어서의 완전집적화 CSP MMIC에 관한 최초의 보고이다.

유기 패키지 기판내에 내장된 LC 다이플렉서 회로 (Fully Embedded LC Diplexer Passive Circuit into an Organic Package Substrate)

  • 이환희;박재영;이한성;윤상근
    • 한국공작기계학회논문집
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    • 제16권6호
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    • pp.201-204
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    • 2007
  • In this paper, fully embedded and miniaturized diplexer device has been developed and characterized for dual-band/mode CDMA handset applications. The size of the embedded diplexer is significantly reduced by embedding high Q circular spiral inductors and high DK MIM capacitors into a low cost organic package substrate. The fabricated diplexer has insertion losses and isolations of -0.5 and -23 dB at 824-894 MHz and -0.7 and -22 dB at 1850-1990 MHz, respectively. Its size is $3.9mm{\times}3.9mm{\times}0.77mm$. The fabricated diplexer is the smallest one which is fully embedded into a low cost organic package substrate.

Structural Evaluation on the Impact of a Radioisotope Package

  • Chung, Sung-Hwan;Lee, Heung-Young;Ku, Jeong-Hoe;Seo, Ki-Seog;Han, Hyun-Soo
    • Nuclear Engineering and Technology
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    • 제30권5호
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    • pp.462-469
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    • 1998
  • A package to transport high-level radioactive materials is required to withstand normal transport and hypothetical accident conditions pursuant to the IAEA and domestic regulations. The package should maintain the structural safety not to release radioactive material in any condition. The structural safety of the package has been evaluated by tests using proto-type or scaled-down models, however, the method by analysis is gradually utilized due to recent advancement of computers and computer codes. In this paper, to evaluate the structural safety of a radioisotope package of the KAERI, the three dimensional impact analyses under 9m free drop and 1m puncture were performed with an explicit finite-element code, the LS-DYNA3D code. The maximum stress intensity on each part was calculated and the structural safety of the package was evaluated in accordance with the regulations.

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내부정합된 GaN-HEMT를 이용한 2.65 GHz Doherty 전력증폭기 (A 2.65 GHz Doherty Power Amplifier Using Internally-Matched GaN-HEMT)

  • 강현욱;이휘섭;임원섭;김민석;이형준;윤정상;이동우;양영구
    • 한국전자파학회논문지
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    • 제27권3호
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    • pp.269-276
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    • 2016
  • 본 논문에서는 내부 정합된 GaN-HEMT를 이용하여 2.65 GHz에서 동작하는 Doherty 전력증폭기를 설계 및 제작하였다. 패키지 내부의 정합회로는 고조파 임피던스를 정합하기 위해 적용되었다. 동시에 기본주파수 임피던스가 부분적으로 정합되기 때문에 입력 및 출력 외부 정합회로는 간단해진다. 트랜지스터 패키지의 본드 와이어와 기생 성분은 EM 시뮬레이션을 통해 예측되었다. Doherty 전력증폭기는 48 V의 동작 전압을 인가하였으며, 6.5 dB의 PAPR을 갖는 LTE 신호에 대해 2.65 GHz에서 13.0 dB의 전력이득, 55.4 dBm의 포화전력, 49.1 %의 효율 및 -26.3 dBc의 ACLR 특성을 얻었다.