• ETRI Journal
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• v.32 no.3
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• pp.457-459
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• 2010

A low-power down-sampling mixer in a low-power digital 65 nm CMOS technology is presented. The mixer consumes only 830 ${\mu}W$ at 1.2 V supply voltage by combining an NMOS and a PMOS mixer with cascade transistors at the output. The measured gain is (19 ${\pm}$1 dB) at frequencies between 100 MHz and 3 GHz. An IIP3 of -5.9 dBm is achieved.

• Journal of IKEEE
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• v.24 no.3
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• pp.845-852
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• 2020

Developing standard cells for 3nm and beyond requires significant advances in the device and interconnect technology. Thus, it is very important to quantify the impact of the new technology in various aspects. In this paper, we perform a through analysis on the impact of Buried Power Rail (BPR) and Complementary FET (CFET) in the perspective of cell area and parasitics such as capacitance. We emphasize that CFET is a technology that realizes 4T and beyond for standard cell designs, but significant capacitance increases (+18.0%), compared to its counterpart technology (FinFET) cell, due to the increase of cell height in the Z-direction.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.3
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• pp.149-156
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• 2002

Europium-activated $Ga_2O_3$ phosphor powders were prepared by homogeneous precipitation method. The resulting powders were characterized by means of TG/DTA, XRD, FT-IR and SEM, Two kinds of powders formed were the crystalline GaOOH and the amorphous-like $\gamma$-$Ga_2O_3$ phases. When the urea concentration was below 0,5 M, rod-like micrometer-sized GaOOH powders were formed. They were transformed via $\alpha$-$Ga_2O_3$ to $\beta$-$Ga_2O_3$ phases under heat treatment. On the other hand, the nanometer-sized $\gamma$-$Ga_2O_3$ powders were formed with urea concentrations higher than 1.0 M, and they were directly changed into $\beta$-$Ga_2O_3$.Photoluminescence (PL) spectra were observed at room temperature, and PL intensities of nanometer-sized $Ga_2O_3$ : $Eu^{3+}$ powders around 610 nm were higher than those of micrometer-sized ones.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.3
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• pp.162-168
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• 2006

To fabricate nanometer scale InGaAs HEMTs, we have successfully developed various novel nano-patterning techniques, including sidewall-gate process and e-beam resist flowing method. The sidewall-gate process was developed to lessen the final line length, by means of the sequential procedure of dielectric re-deposition and etch-back. The e-beam resist flowing was effective to obtain fine line length, simply by applying thermal excitation to the semiconductor so that the achievable final line could be reduced by the dimension of the laterally migrated e-beam resist profile. Applying these methods to the device fabrication, we were able to succeed in making 30nm $In_{0.7}Ga_{0.3}As$ HEMTs with excellent $f_T$ of 426GHz. Based on nanometer scale InGaAs HEMT technology, several high performance millimeter-wave integrated circuits have been successfully fabricated, including 77GHz MMIC chipsets for automotive radar application.

• Journal of the Korean Magnetics Society
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• v.15 no.2
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• pp.61-66
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• 2005

In order to make submicron cell for spin-injection device, lift-off method using Pt stencil and wet etching was chosen. This approach allows batch fabrication of stencil substrate with electron-beam lithography. It simplifies the process between magnetic film stack deposition and final device testing, thus enabling rapid turnaround in sample fabrication. Submicron junctions with size of $200nm{\times}300nm$ and $500nm{\times}500nm$ 500 nm and pseudo spin valve structure of $CoFe(30{\AA})/Cu(100{\AA})/CoFe(120{\AA}$) was deposited into the nanojunctions. MR ratio was 0.8 and $1.1{\%}$, respectively and spin transfer effect was confirmed with critical current of $7.65{\times}10^7A/cm^2$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.6
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• pp.272-279
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• 2015

$Y_2O_3:Eu^{3+}$ is an excellent red-emitting phosphor, which has been widely used for display devices due to highly luminescent property and chemical stability. In this study, $Y_2O_3:Eu^{3+}$ red phosphors were prepared using the solid state reaction and RF thermal plasma synthesis. The particle size of $Y_2O_3:Eu^{3+}$ phosphors obtained by the solid state reaction varied from 10 to $20{\mu}m$, and 30~100 nanometer sized $Y_2O_3:Eu^{3+}$ particles were obtained from a liquid form of raw material through RF thermal plasma synthesis without an additional heat treatment. Photoluminescence measurements of the obtained $Y_2O_3:Eu^{3+}$ particles showed a red emission peak at 611 nm ($^5D_0{\rightarrow}^7F_2$). PL intensity of red nano phosphors prepared by RF thermal plasma synthesis was comparable to that of red phosphors prepared by the solid state reaction, indicating that nano-sized $Y_2O_3:Eu^{3+}$ red phosphors could be successfully synthesized using one-step process of RF thermal plasma.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.19 no.5
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• pp.616-621
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• 2010

New type of the base material of the light-emitting diode requires copper wafer in view of heat and electrical conductance. Therefore, polishing process of the substrate level is needed to get a nanometer level of surface roughness as compared with pattern structure of nano-size in the semiconductor industry. In this paper, a series of lapping and polishing technique is shown for the rough and deflected copper substrate of thickness 3mm. Lapping by sand papers tried air cooling method. And two steps of polishing used the diamond abrasives and the $Al_2O_3$ slurry of size 100mm considering the residual scratch. White-light interferometer proved successfully a mirror-like surface roughness of Ra 6nm on the area of $0.56mm{\times}0.42mm$.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.542-543
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• 2012

Coherent diffraction imaging (CDI) method using hard x-ray at 5.46 keV was applied to study assembly of Ni and Ni oxide nano structures formed on a Si3N4 membrane. Density distribution of Ni nano-particles was obtained quantitatively with about 15 nm lateral resolution by reconstructing images from the speckle diffraction pattern. In addition, reconstructed images of nickel oxide particles indicated that Ni atoms diffuse out during the oxidation process leaving pores inside the nickel oxide crust. Furthermore, we recognize that really weak phase object, less than 5 nm thickness of Ni residues, can be reconstructed due to the reference particles. We achieved quantitative information of nanometer sized materials and demonstrate the effect of reference particles by using hard x-ray coherent diffractive imaging method.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.6
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• pp.232-236
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• 2020

In this study, the optical properties of CaF2-Al2O3-B2O3-TiO2 (CABT) system glass doped with rare earth ion, that is used in various light devices due to its excellent luminous properties, were analyzed as a function of kind of crystal phases formed and size of crystals generated in the glass matrix. TiO2 was added to control nucleation and crystallization, and Eu2O3 was added to enhance the luminescence characteristics. DTA analysis was performed to confirm the heat treatment condition of crystal generation, and XRD and SEM anal ysis were carried out for the crystal phase change of nanometer size. As a result of the analysis, the luminous properties of oxy-fluoride-based glass were improved duo to crystallization of nanometer size, but was rather degraded when excessively large crystals were generated.

• Nano
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• v.13 no.12
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• pp.1850142.1-1850142.9
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• 2018

Modified titanate nanotubes (TNT) were tested for their adsorption of methylene blue (MB) from water solutions. They were obtained from the $TiO_2$ nanopowder using a standard alkaline hydrothermal method but in the stage of acid washing, when the titanate flakes begin to roll into nanotubes, magnetite nanoparticles were added. The $Fe_3O_4$ magnetic nanoparticles with diameter of around 2 nm and 12 nm were used in the tests. Significantly stronger adsorption of MB was observed when smaller nanoparticles were used compared to using larger nanoparticles and compared to the case of unmodified nanotubes. It was shown that the increased adsorption of MB is associated with a more negative value of ${\zeta}$-potential for titanates modified by the ultra-small nanoparticles. In the adsorption experiment, pH 7 was selected. These results may prove to be of great importance in the case of potential applications corresponding to the use of such material for wastewater purification.