JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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InGaAs Nano-HEMT Devices for Millimeter-wave MMICs

  • Kim, Sung-Won (School of Electrical Engineering and Computer Science (EECS), Seoul National University) ;
  • Kim, Dae-Hyun (School of Electrical Engineering and Computer Science (EECS), Seoul National University) ;
  • Yeon, Seong-Jin (School of Electrical Engineering and Computer Science (EECS), Seoul National University) ;
  • Seo, Kwang-Seok (School of Electrical Engineering and Computer Science (EECS), Seoul National University)
  • Published : 2006.09.30
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Abstract

To fabricate nanometer scale InGaAs HEMTs, we have successfully developed various novel nano-patterning techniques, including sidewall-gate process and e-beam resist flowing method. The sidewall-gate process was developed to lessen the final line length, by means of the sequential procedure of dielectric re-deposition and etch-back. The e-beam resist flowing was effective to obtain fine line length, simply by applying thermal excitation to the semiconductor so that the achievable final line could be reduced by the dimension of the laterally migrated e-beam resist profile. Applying these methods to the device fabrication, we were able to succeed in making 30nm $In_{0.7}Ga_{0.3}As$ HEMTs with excellent $f_T$ of 426GHz. Based on nanometer scale InGaAs HEMT technology, several high performance millimeter-wave integrated circuits have been successfully fabricated, including 77GHz MMIC chipsets for automotive radar application.

Keywords

References

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