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Preparation of $Ga_2O_3:Eu^{3+}$ phosphors by homogeneous precipitation  

천민호 (한밭대학교 신소재공학부)
박인용 (한밭대학교 신소재공학부)
이종원 (한밭대학교 신소재공학부)
김선태 (한밭대학교 신소재공학부)
Publication Information
Journal of the Korean Crystal Growth and Crystal Technology / v.12, no.3, 2002 , pp. 149-156 More about this Journal
Abstract
Europium-activated $Ga_2O_3$ phosphor powders were prepared by homogeneous precipitation method. The resulting powders were characterized by means of TG/DTA, XRD, FT-IR and SEM, Two kinds of powders formed were the crystalline GaOOH and the amorphous-like $\gamma$-$Ga_2O_3$ phases. When the urea concentration was below 0,5 M, rod-like micrometer-sized GaOOH powders were formed. They were transformed via $\alpha$-$Ga_2O_3$ to $\beta$-$Ga_2O_3$ phases under heat treatment. On the other hand, the nanometer-sized $\gamma$-$Ga_2O_3$ powders were formed with urea concentrations higher than 1.0 M, and they were directly changed into $\beta$-$Ga_2O_3$.Photoluminescence (PL) spectra were observed at room temperature, and PL intensities of nanometer-sized $Ga_2O_3$ : $Eu^{3+}$ powders around 610 nm were higher than those of micrometer-sized ones.
Keywords
Phosphor; $Ga_2O_3$; Europium; Photoluminescence; Homogeneous precipitation;
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