• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.1
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• pp.11-20
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• 2008

The structure of 2-bit/cell flash memory device was characterized for sub-50 nm non-volatile memory (NVM) technology. The memory cell has spacer-type storage nodes on both sidewalls in a recessed channel region, and is erased (or programmed) by using band-to-band tunneling hot-hole injection (or channel hot-electron injection). It was shown that counter channel doping near the bottom of the recessed channel is very important and can improve the $V_{th}$ margin for 2-bit/cell operation by ${\sim}2.5$ times. By controlling doping profiles of the channel doping and the counter channel doping in the recessed channel region, we could obtain the $V_{th}$ margin more than ${\sim}1.5V$. For a bit-programmed cell, reasonable bit-erasing characteristics were shown with the bias and stress pulse time condition for 2-bit/cell operation. The length effect of the spacer-type storage node is also characterized. Device which has the charge storage length of 40 nm shown better ${\Delta}V_{th}$ and $V_{th}$ margin for 2-bit/cell than those of the device with the length of 84 nm at a fixed recess depth of 100 nm. It was shown that peak of trapped charge density was observed near ${\sim}10nm$ below the source/drain junction.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.17 no.4
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• pp.266-274
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• 2024

In this paper, we designed a low-area 32-bit PF (Poly-fuse) OTP IP, a non-volatile memory that stores data required for analog circuit trimming and calibration. Since one OTP cell is constructed using two PFs in one select transistor, a 1cell-2bit multibit PF OTP cell that can program 2bits of data is proposed. The bitcell size of the proposed 1cell-2bit PF OTP cell is 1/2 of 12.69㎛ × 3.48㎛ (=44.161㎛2), reducing the cell area by 33% compared to that of the existing PF OTP cell. In addition, in this paper, a new 1 row × 32 column cell array circuit and core circuit (WL driving circuit, BL driving circuit, BL switch circuit, and DL sense amplifier circuit) are proposed to meet the operation of the proposed multbit cell. The layout size of the 32bit OTP IP using the proposed multibit cell is 238.47㎛ × 156.52㎛ (=0.0373㎛2) is reduced by about 33% compared that of the existing 32bit PF OTP IP using a single bitcell, which is 386.87㎛ × 144.87㎛ (=0.056㎛2). The 32-bit PF OTP IP, designed with 10 years of data retention time in mind, is designed with a minimum programmed PF sensing resistance of 10.5㏀ in the detection read mode and of 5.3 ㏀ in the read mode, respectively, as a result of post-layout simulation of the test chip.

• The Journal of Internal Korean Medicine
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• v.25 no.4
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• pp.274-288
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• 2004

Objectives : This study was designed to evaluate the effect on cytotoxicity of Bojungikki-tang(BIT) in human lung cancer H460 cells. Methods : BIT-induced cell death was confirmed as apoptosis characterized by chromatin condensation and increase of the $sub-G_1$, DNA content. It was tested whether the water extract of BIT affects the cell cycle regulators such as, p2l/Cipl, p27/Kipl, cyclin $B_1$. Results : The data showed that treatment of BIT decreased the viability of H460 cells in a dose-dependent manner. p2l/Cip1 is gradually decreased by the addition of the cells with BIT extract. Interestingly, p27/Kip1 is not detected for 24 hr after the addition of BIT extract, however, after 24 hr, p27/Kipl markedly increased. In addition, cyclin $B_1$, decreased in a time dependent manner after the addition of the water extract. The activation of caspase -3 protease was further confirmed by degradation of procaspase-8 protease andpoly(ADP-ribose) polymerase(P ARP) by BIT in H460 cells. Moreover, BIT induced the increase of Bak expression. Conclusion : These results suggest that the extract of BIT exerts anticancer effects to induce the death of human lung cancer H460 cells via down regulation of cell cycle regulators such as p2l/Cip1, and cyclin B1 or up regulation of cell cycle regulators such as p27/Kip1. Moerover results suggest that BIT induces an apoptosis in H460 cells via activation of intrinsic caspase cascades.

• Transactions on Electrical and Electronic Materials
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• v.10 no.2
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• pp.44-48
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• 2009

A simulation study of a 10-bit two-stage DAC was done by using a conventional current switch cell. The DAC adopts the segmented architecture in order to reduce the circuit complexity and the die area. The 10-bit CMOS DAC was designed in 2 blocks, a unary cell matrix for 6 MSBs and a binary weighted array for 4 LSBs, for fabrication in a 0.35-${\mu}m$ CMOS process. To cancel the accumulation of errors in each current cell, a symmetrical switching sequence is applied in the unary cell matrix for 6 MSBs. To ensure high-speed operation, a decoding circuit with one stage latch and a cascode current source were developed. Simulations show that the maximum power consumption of the 10-bit DAC is 74 mW with a sampling frequency of 100 MHz.

• ETRI Journal
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• v.26 no.6
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• pp.583-588
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• 2004

In this paper we investigate the effect of a shield metal line inserted between adjacent bit lines on the refresh time and noise margin in a planar DRAM cell. The DRAM cell consists of an access transistor, which is biased to 2.5V during operation, and an NMOS capacitor having the capacitance of 10fF per unit cell and a cell size of $3.63{\mu}m^2$. We designed a 1Mb DRAM with an open bit-line structure. It appears that the refresh time is increased from 4.5 ms to 12 ms when the shield metal line is inserted. Also, it appears that no failure occurs when $V_{cc}$ is increased from 2.2 V to 3 V during a bump up test, while it fails at 2.8 V without a shield metal line. Raphael simulation reveals that the coupling noise between adjacent bit lines is reduced to 1/24 when a shield metal line is inserted, while total capacitance per bit line is increased only by 10%.

• Journal of IKEEE
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• v.20 no.2
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• pp.167-170
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• 2016

Replica bit-line technique is used for making enable signal of sense amplifier which accurately tracks bit-line of SRAM. However, threshold voltage variation in the replica bit-line circuit changes the cell current, which results in variation of the sense amplifier enable time, $T_{SAE}$. The variation of $T_{SAE}$ makes the sensing operation unstable. In this paper, in addition to conventional replica bit-line delay ($RBL_{conv}$), dual replica bit-line delay (DRBD) and multi-stage dual replica bit-line delay (MDRBD) which are used for reducing $T_{SAE}$ variation are briefly introduced, and the maximum possible number of on-cell which can satisfy $6{\sigma}$ sensing yield is determined through simulation at a supply voltage of 0.6V with 14nm FinFET technology. As a result, it is observed that performance of DRBD and MDRBD is improved 24.4% and 48.3% than $RBL_{conv}$ and energy consumption is reduced which 8% and 32.4% than $RBL_{conv}$.

• The Journal of the Acoustical Society of Korea
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• v.18 no.2
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• pp.53-60
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• 1999

In this paper, it is proposed to a new architecture of CMOS IADC(Current-Mode Analog-to-Digital Converter) using 1.5-bit bit cell of which consists a CSH(Current-Mode Sample-and-Hold) and CCMP(Current-Mode Comparator). In order to guarantee the entire linearity of IADC, the CSH is designed to cancel CFT(Clock Feedthrough) whose resolution is to meet at the least 9-bit which is placed in the front-end of each bit cell. In the proposed IADC, digital correction logic is simplified and power consumption is reduced because bit cell of each stage needs two latch CCMP. Also, it is available for a mixed-mode integrated circuit because all of block is designed with only MOS transistor. With the HYUNDAI 0.8㎛ CMOS parameter, the HSPICE simulation results show that the proposed IADC can be operated at 20Ms/s with SNR of 43 dB with which is satisfied 7-bit resolution for input signal at 100 ㎑, and its power consumption is 27㎽.

• Journal of IKEEE
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• v.16 no.3
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• pp.265-273
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• 2012

Data stability and leakage power dissipation have become a critical issue in scaled SRAM design. In this paper, an advanced 8T SRAM cell improving the read and write stability of data storage elements as well as reducing the leakage current in the idle mode is presented. During the read operation, the bit-cell keeps the noise-vulnerable data 'low' node voltage close to the ground level, and thus producing near-ideal voltage transfer characteristics essential for robust read functionality. In the write operation, a negative bias on the cell facilitates to change the contents of the bit. Unlike the conventional 6T cell, there is no conflicting read and write requirement on sizing the transistors. In the standby mode, the built-in stacked device in the 8T cell reduces the leakage current significantly. The 8T SRAM cell implemented in a 130 nm CMOS technology demonstrates almost 100 % higher read stability while bearing 20 % better write-ability at 1.2 V typical condition, and a reduction by 45 % in leakage power consumption compared to the standard 6T cell. The stability enhancement and leakage power reduction provided with the proposed bit-cell are confirmed under process, voltage and temperature variations.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.2
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• pp.1-6
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• 2010

We proposed a highly integrated 3-dimensional NOR Flash memory array by using vertical 4-bit SONOS NOR flash memory. This structure has a vertical channel, so it is possible to have a long enough channel without extra cell area. Therefore, we can avoid second-bit effect, short channel effect, and redistribution of injected charges. And the proposed array structure is based on three-dimensional integration. Thus, we can obtain a NOR flash memory having $1.5F^2$/bit cell size.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.2
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• pp.87-94
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• 2001

A soft error rate for DRAM was predicted in connection with the leakage current in cell capacitor. The charge in cell capacitor was decreased during the DRAM operation, and soft error retes due to the leakage current were calculated in various operation mode of DRAM. It was found that the soft error rate of the /bit mode was dominant with small leakage current, but as increasing the leakage current memory mode shown the dominant effect on soft error rate. Using the 256M grade DRAM structure it was predicted that the soft error rate was influenced by the change of the cell capacitance, bit line capacitance, and the input voltage sensitivity of sense amplifier, and these results can be used to the design of the optimum cells in the next generation DRAM development.