Journal of the Institute of Electronics Engineers of Korea SD (대한전자공학회논문지SD)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Highly Integrated 3-dimensional NOR Flash Array with Vertical 4-bit SONOS (V4SONOS)

수직형 4-비트 SONOS를 이용한 고집적화된 3차원 NOR 플래시 메모리

  • Kim, Yoon (School of Electrical Engineering Seoul National University) ;
  • Yun, Jang-Gn (School of Electrical Engineering Seoul National University) ;
  • Cho, Seong-Jae (School of Electrical Engineering Seoul National University) ;
  • Park, Byung-Gook (School of Electrical Engineering Seoul National University)
  • 김윤 (서울대학교 전기컴퓨터공학부) ;
  • 윤장근 (서울대학교 전기컴퓨터공학부) ;
  • 조성재 (서울대학교 전기컴퓨터공학부) ;
  • 박병국 (서울대학교 전기컴퓨터공학부)
  • Published : 2010.02.25
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Abstract

We proposed a highly integrated 3-dimensional NOR Flash memory array by using vertical 4-bit SONOS NOR flash memory. This structure has a vertical channel, so it is possible to have a long enough channel without extra cell area. Therefore, we can avoid second-bit effect, short channel effect, and redistribution of injected charges. And the proposed array structure is based on three-dimensional integration. Thus, we can obtain a NOR flash memory having $1.5F^2$/bit cell size.

수직형 채널을 가지는 4-비트 SONOS 플래시 메모리를 이용하여, 고집적화된 3차원 형태의 NOR 플래시 메모리 어레이를 제안하였다. 수직형 채널을 가지기 때문에, 집적도의 제한 없이 충분히 긴 채널을 가질 수 있다. 이로 인하여, 짧은 채널의 멀티 비트 메모리에서 발생할 수 있는 비트 간의 간섭효과, 짧은 채널 효과, 및 전하 재분포 현상을 해결 할 수 있다. 또한, 제시된 어레이는 3차원 형태를 기반으로 고집적화되어, 발표된 NOR 중에서 최소의 셀 크기 값인 $1.5F^2$/bit을 가진다.

Keywords

References

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