• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.05a
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• pp.682-684
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• 2003

In this paper, we have designed the p-type SiGe MOSFET and analyzed the electrical characteristics over the temperature range of 300K and 77K. When the gate voltage is biased to -1.5V, the threshold voltage values are -0.97V and -1.15V at room temperature and 77K, respectively. We know that the operating characteristics of SiGe MOSFET is superior to the basic Si MOSFET which the threshold voltage is -1.36V.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.3
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• pp.474-477
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• 2003

In this paper, we have designed the p-type SiGe MOSFET and analyzed the electrical characteristics over the temperature range or 300K and 77K. When the gate voltage is biased to -1.5V, the threshold voltage values are -0.97V and -1.15V at room temperature and 77K, respectively. We know that the operating characteristics of SiGe MOSFET is superior to the basic Si MOSFET which the threshold voltage is -1.36V.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.10a
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• pp.777-779
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• 2003

In this paper, we have investigated Characteristics of C-V for Double gate MOSFET with main gate and side gate. DG MOSFET has the main gate length of 50nm and the side gate length of 70nm. We have investigated characteristics of C-V and main gate voltage is changed from -5V to ＋5V. Also we have investigated characteristics of C-V for DG MOSFET when the side gate length is changed from 40nm to 90nm. As the side gate length is reduced, the transconductance is increased and the capacitance is reduced. When the side gate voltage is 3V, we know that C-V curves are bending at near the main gate voltage of 1.8V. We have simulated using ISE-TCAD tool for characteristics analysis of device.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.10a
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• pp.773-776
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• 2003

In this paper, we have designed the p-type SiGe MOSFET and analyzed the electrical characteristics. When the gate voltage is biased to -1.5V, the threshold voltage values are -0.97V and -1.15V at room temperature and 77K, respectively. We know that the operating characteristics of SiGe MOSFET is superior to the basic Si MOSFET which the threshold voltage is -1.36V.

• Journal of the Korean Institute of Telematics and Electronics
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• v.13 no.6
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• pp.7-11
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• 1976

A voltage-stable negative resistance circuit with operational amplifier is proposed, and circuit analysis is given all the input voltage range. The behavior of the v-i characteristics in the nogative resistance region is devided into two causes, and top points in the input v-i characteristics of the circuit is analyzed with them. Experimental results of the v-i characteristics of the proposed circuit has a good linearity in the negative region with negative resistance, -86$\Omega$~-833$\Omega$ for the input voltage, $\pm$ 1~$\pm$ 5 colts. The v-i characteristics of the circuit in all the input voltage range is discussed.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.05a
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• pp.693-695
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• 2003

In this paper, we have investigated temperature-dependent characteristics of current-voltage for double gate MOSFET with main gate and side gate. DG MOSFET has the main gate length of 50nm and the side gate length of 70nm. We have investigated the temperature-dependent characteristics of current-voltage and drain voltage is changed from 0V to 5.0V at $V_{mg}$ =1.5V and $V_{sg}$ =3.0V. We have obtained a very good characteristics of current-voltage for 77K. We have simulated using ISE-TCAD tool for characteristics analysis of device.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.11a
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• pp.486-489
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• 2002

In this paper, we have investigated characteristics of sub-50nm double gate MOSFET. From I-V characteristics, we obtained =510$\mu$A/${\mu}{\textrm}{m}$ at VMG=VDS=1.5V and VSG=3.0V. Then, the transconductance is 111$\mu$A/V, subthreshold slope is 86mV/dec and DIBL (Drain Induced Barrier Lowering) is 51.3mV. Also, we have presented that TCAD simulator is suitable for device simulation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.05a
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• pp.91-96
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• 1992

The nonvolatile SNOSFET EEPROM memory devices with the channel width and iength of 15[$\mu\textrm{m}$]${\times}$15[$\mu\textrm{m}$], 15[$\mu\textrm{m}$]${\times}$1.5[$\mu\textrm{m}$] and 1.9[$\mu\textrm{m}$]${\times}$1.7[$\mu\textrm{m}$] were fabricated by using the actual CMOS 1 [Mbit] process technology. The charateristics of I$\_$D/-V$\_$D/, I$\_$D/-V$\_$G/ were investigated and compared with the channel width and length. From the result of measuring the I$\_$D/-V$\_$D/ charges into the nitride layer by applying the gate voltage, these devices ere found to have a low conductance state with little drain current and a high conductance state with much drain current. It was shown that the devices of 15[$\mu\textrm{m}$]${\times}$15[$\mu\textrm{m}$] represented the long channel characteristics and the devices of 15[$\mu\textrm{m}$]${\times}$1.5[$\mu\textrm{m}$] and 1.9[$\mu\textrm{m}$]${\times}$1.7[$\mu\textrm{m}$] represented the short channel characteristics. In the characteristics of I$\_$D/-V$\_$D/, the critical threshold voltages of the devices were V$\_$w/ = +34[V] at t$\_$w/ = 50[sec] in the low conductance state, and the memory window sizes wee 6.3[V], 7.4[V] and 3.4[V] at the channel width and length of 15[$\mu\textrm{m}$]${\times}$15[$\mu\textrm{m}$], 15[$\mu\textrm{m}$]${\times}$1.5[$\mu\textrm{m}$], 1.9[$\mu\textrm{m}$]${\times}$1.7[$\mu\textrm{m}$], respectively. The positive logic conductive characteristics are suitable to the logic circuit designing.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.11
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• pp.681-684
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• 2016

This research was carried out experiments of variety IGBTs for industrial inverter and electric vehicle. The devices for this paper were planar gate IGBT, trench gate IGBT and dual gate IGBT and we designed using same design and process parameters. As a result of experiments, the electrical characteristics of planar gate IGBT were 1,459 V of breakdown voltage, 4.04 V of threshold voltage and 4.7 V of on-state voltage drop. And the electrical characteristics of trench gate IGBT were 1,473 V of breakdown voltage, 4.11 V of threshold voltage and 3.17 V of on-state voltage drop. Lastly, the electrical characteristics of dual gate IGBT were 1,467 V of breakdown voltage, 4.14 V of threshold voltage and 3.08V of on-state voltage drop. We almost knew that the trench gate IGBT was superior to dual gate IGBT in terms of breakdown voltage. On the other hand, the dual gate IGBT was better than the trench gate IGBT in terms of on state voltage drop.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.22 no.2
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• pp.330-337
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• 2018

This paper proposes a technique to analyze the flatness characteristics of the attenuator at 10Hz to $50\text\tiny{MHz}$ on the basis of $1\text\tiny{kHz}$ using a Thermal Voltage Converter and AC measurement standard. In the proposed technique, the input voltage of the attenuator for each measuring frequency is supplied at the same rate as $1\text\tiny{kHz}$ using TVC, and the flatness characteristics of the attenuator are analyzed by the voltage variation indicated in the AC measurement standard. The results of the analysis of the attenuator flatness characteristics show that the maximum uncertainty of $866{\mu}V/V$ can be measured from $10\text\tiny{dB}$ to $70\text\tiny{dB}$ and the uncertainty is reduced by about 37% compared to $2.31\text\tiny{mV}$/V using the network measurement method. The improved attenuator flatness characteristic values can be applied to the frequency flatness calibration from 2.2V to 2.2mV at the low voltage of the AC measurement standard.