• 제목/요약/키워드: 0.18 ${\mu}m$ CMOS

검색결과 599건 처리시간 0.022초

A CMOS 5.4/3.24-Gbps Dual-Rate CDR with Enhanced Quarter-Rate Linear Phase Detector

  • Yoo, Jae-Wook;Kim, Tae-Ho;Kim, Dong-Kyun;Kang, Jin-Ku
    • ETRI Journal
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    • 제33권5호
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    • pp.752-758
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    • 2011
  • This paper presents a clock and data recovery circuit that supports dual data rates of 5.4 Gbps and 3.24 Gbps for DisplayPort v1.2 sink device. A quarter-rate linear phase detector (PD) is used in order to mitigate high speed circuit design effort. The proposed linear PD results in better jitter performance by increasing up and down pulse widths of the PD and removes dead-zone problem of charge pump circuit. A voltage-controlled oscillator is designed with a 'Mode' switching control for frequency selection. The measured RMS jitter of recovered clock signal is 2.92 ps, and the peak-to-peak jitter is 24.89 ps under $2^{31}-1$ bit-long pseudo-random bit sequence at the bitrate of 5.4 Gbps. The chip area is 1.0 mm${\times}$1.3 mm, and the power consumption is 117 mW from a 1.8 V supply using 0.18 ${\mu}m$ CMOS process.

A Low Voltage Bandgap Current Reference with Low Dependence on Process, Power Supply, and Temperature

  • Cheon, Jimin
    • 한국정보기술학회 영문논문지
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    • 제8권2호
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    • pp.59-67
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    • 2018
  • The minimum power supply voltage of a typical bandgap current reference (BGCR) is limited by operating temperature and input common mode range (ICMR) of a feedback amplifier. A new BGCR using a bandgap voltage generator (BGVG) is proposed to minimize the effect of temperature, supply voltage, and process variation. The BGVG is designed with proportional to absolute temperature (PTAT) characteristic, and a feedback amplifier is designed with weak-inversion transistors for low voltage operation. It is verified with a $0.18-{\mu}m$ CMOS process with five corners for MOS transistors and three corners for BJTs. The proposed circuit is superior to other reported current references under temperature variation from $-40^{\circ}C$ to $120^{\circ}C$ and power supply variation from 1.2 V to 1.8 V. The total power consumption is $126{\mu}W$ under the conditions that the power supply voltage is 1.2 V, the output current is $10{\mu}A$, and the operating temperature is $20^{\circ}C$.

A Fast RSSI using Novel Logarithmic Gain Amplifiers for Wireless Communication

  • Lee, Sung-Ho;Song, Yong-Hoon;Nam, Sang-Wook
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제9권1호
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    • pp.22-28
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    • 2009
  • This paper presents a fast received signal strength indicator (RSSI) circuit for wireless communication application. The proposed circuit is developed using power detectors and an analog-to-digital converter to achieve a fast settling time. The power detector is consisted of a novel logarithmic variable gain amplifier (VGA), a peak detector, and a comparator in a closed loop. The VGA achieved a wide logarithmic gain range in a closed loop form for stable operation. For the peak detector, a fast settling time and small ripple are obtained using the orthogonal characteristics of quadrature signals. In $0.18-{\mu}m$ CMOS process, the RSSI value settles down in $20{\mu}s$ with power consumption of 20 mW, and the maximum ripple of the RSSI is 30 mV. The proposed RSSI circuit is fabricated with a personal handy-phone system transceiver. The active area is $0.8{\times}0.2\;mm^2$.

50MHz 2단 온도계 디코더 방식을 사용한 10 bit DAC 설계 (Design and Implement of 50MHz 10 bits DAC based on double step Thermometer Code)

  • 정준희;김영식
    • 대한전자공학회논문지SD
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    • 제49권6호
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    • pp.18-24
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    • 2012
  • 본 논문에서는 $0.18-{\mu}m$ CMOS 공정으로 제작된 무선 센서네트워크 송신기에 적용 가능한 50MHz/s 저전력 10비트 DAC 측정 결과를 제시한다. 제작된 DAC는 일반적 세그멘티드 방식과는 다르게 2단 온도계 디코더를 이용한 전류 구동 방식으로, 10비트를 상위 6비트와 하위 4비트로 나누어 구현하였다. 상위 6 비트의 온도계 디코더는 3비트의 행 디코더와 3비트의 열 디코더로 행과 열을 대칭적으로 구성하여 상위 전류 셀을 제어하였고, 하위 4비트도 온도계 디코더 방식으로 하위 전류셀을 구동하도록 설계하였다. 상위와 하위 단위 전류 셀은 셀 크기를 바꾸는 대신 바이어스 회로에서 하위 단위 전류의 크기가 상위 단위 전류와의 크기에 비해 1/16이 되도록 바이어스 회로를 설계하였다. 그리고 상위와 하위 셀간의 온도계 디코더 신호의 동기를 위해 입력 신호 및 디코딩 된 신호에 모두 동기화 래치를 적용하여 Skew를 최소화하도록 설계하였다. 측정결과 DAC는 50MHz클럭에서 최대 출력구동범위가 2.2Vpp이고, 이 조건에서 DC전원은 3.3 V에서 DC전류 4.3mA를 소모하였다. 그리고 DAC의 선형성 특성은 최대 SFDR이 62.02 dB, 최대 DNL은 0.37 LSB, 최대 INL은 0.67 LSB로 측정되었다.

A 12 mW ADPLL Based G/FSK Transmitter for Smart Utility Network in 0.18 ㎛ CMOS

  • Park, Hyung-Gu;Kim, Hongjin;Lee, Dong-Soo;Yu, Chang-Zhi;Ku, Hyunchul;Lee, Kang-Yoon
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제13권4호
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    • pp.272-281
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    • 2013
  • This paper presents low power frequency shift keying (FSK) transmitter using all digital PLL (ADPLL) for smart utility network (SUN). In order to operate at low-power and to integrate a small die area, the ADPLL is adopted in transmitter. The phase noise of the ADPLL is improved by using a fine resolution time to digital converter (TDC) and digitally controlled oscillator (DCO). The FSK transmitter is implemented in $0.18{\mu}m$ 1-poly 6-metal CMOS technology. The die area of the transmitter including ADPLL is $3.5mm^2$. The power consumption of the ADPLL is 12.43 mW. And, the power consumptions of the transmitter are 35.36 mW and 65.57 mW when the output power levels are -1.6 dBm and +12 dBm, respectively. Both of them are supplied by 1.8 V voltage source. The frequency resolution of the TDC is 2.7 ps. The effective DCO frequency resolution with the differential MOS varactor and sigma-delta modulator is 2.5 Hz. The phase noise of the ADPLL output at 1.8 GHz is -121.17 dBc/Hz with a 1 MHz offset.

A High-Resolution Dual-Loop Digital DLL

  • Kim, Jongsun;Han, Sang-woo
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제16권4호
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    • pp.520-527
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    • 2016
  • A new dual-loop digital delay-locked loop (DLL) using a hybrid (binary + sequential) search algorithm is presented to achieve both wide-range operation and high delay resolution. A new phase-interpolation range selector (PIRS) and a variable successive approximation register (VSAR) algorithm are adopted to resolve the boundary switching and harmonic locking problems of conventional digital DLLs. The proposed digital DLL, implemented in a $0.18-{\mu}m$ CMOS process, occupies an active area of $0.19mm^2$ and operates over a wide frequency range of 0.15-1.5 GHz. The DLL dissipates a power of 11.3 mW from a 1.8 V supply at 1 GHz. The measured peak-to-peak output clock jitter is 24 ps (effective pk-pk jitter = 16.5 ps) with an input clock jitter of 7.5 ps at 1.5 GHz. The delay resolution is only 2.2 ps.

The Design of a 0.15 ps High Resolution Time-to-Digital Converter

  • Lee, Jongsuk;Moon, Yong
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제15권3호
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    • pp.334-341
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    • 2015
  • This research outlines the design of a HR-TDC (High Resolution Time-to-Digital Converter) for high data rate communication systems using a $0.18{\mu}m$ CMOS process. The coarse-fine architecture has been adopted to improve the resolution of the TDC. A two-stage vernier time amplifier (2S-VTA) was used to amplify the time residue, and the gain of the 2S-VTA was larger than 64. The error during time amplification was compensated using two FTDCs (Fine-TDC) with their outputs. The resolution of the HR-TDC was 0.15 ps with a 12-bit output and the power consumption was 4.32 mW with a 1.8-V supply voltage.

CPFSK communication 사용한 915MHz ISM Band 위한 PLL Frequency Synthesizer 설계 (Design of PLL Frequency Synthesizer for a 915MHz ISM Band wireless transponder using CPFSK communication)

  • 김성훈;조상복
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2007년도 심포지엄 논문집 정보 및 제어부문
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    • pp.286-288
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    • 2007
  • In this paper, the fast locking PLL Frequency Synthesizer with low phase noise in a 0.18um CMOS process is presented. Its main application IS for the 915MHz ISM band wireless transponder upon the CPFSK (Continuous Phase Frequency Shift Keying) modulation scheme. Frequency synthesizer, which in this paper, is designed based on self-biased techniques and is independent with processing technology when damping factor and bandwidth fixed to most important parameters as operating frequency ratio, broad frequency range, and input phase offset cancellation. The proposed frequecy synthesizer, which is fully-integrated and is in 320M $^{\sim}$ 960MHz of the frequency range with 10MHz of frequency resolution. And its is implemented based on integer-N architecture. Its power consumption is 50mW at 1.8V of supply voltage and core area is $540{\mu}m$ ${\times}$ $450{\mu}m$. The measured phase noises are -117.92dBc/Hz at 10MHz offset, with low settling time less than $3.3{\mu}s$.

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CORDIC 알고리듬에 기반 한 OFDM 시스템용 8192-Point FFT 프로세서 (A 8192-Point FFT Processor Based on the CORDIC Algorithm for OFDM System)

  • 박상윤;조남익
    • 한국통신학회논문지
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    • 제27권8B호
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    • pp.787-795
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    • 2002
  • 본 논문에서 OFDM (Orthogonal Frequency-Division Multiplexing) 시스템용 2K/4K/8K-point 복소 FFT (Fast Fourier Transform) 프로세서의 구조와 그 구현방법을 제안한다. 제안하는 프로세서의 구조는 긴 길이의 DFT를 짧은 길이의 다차원 DFT로 분할하기 위하여 쿨리-투키 알고리듬에 기반 한다. 전치 메모리, 셔플 메모리, 메모리 합성 방법은 다차원 변환을 위한 메모리의 능률적 조작을 위해 사용한다. Booth 알고리듬과 CORDIC (COordinate Rotation DIgital Computer) 프로세서는 각 차원에서 트위들 팩터 곱셈을 위해 사용한다. 또한, CORDIC 프로세서에는 트위들 팩터를 저장하기 위해 필요한 ROM의 사용을 막기 위해 트위들 팩터 발생 방법을 제안한다. 전체 2K/4K/8K FFT 프로세서는 600,000 게이트를 사용하며, 1.8V, 0.18${\mu}m$ CMOS를 이용해 구현한다. 제안하는 프로세서는 8K-point FFT를 273${\mu}s$마다, 2K-point를 68.26${\mu}s$마다 수행할 수 있으며, SNR은 DVB-T의 OFDM을 위해 충분한 48dB를 넘는다.

900MHz GSM 디지털 단말기용 Si BiCMOS RF송수신 IC개발 (I) : RF수신단 (An Integrated Si BiCMOS RF Transceiver for 900 MHz GSM Digital Handset Application (I) : RF Receiver Section)

  • 박인식;이규복;김종규;김한식
    • 전자공학회논문지S
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    • 제35S권9호
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    • pp.9-18
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    • 1998
  • 본 논문에서는 E-GSM 단말기용 Transceiver RFIC 칩 수신단의 회로설계, 제작 및 특성측정을 수행하였다. AMS사의 0.8${\mu}m$ 실리콘 BiCMOS 공정을 사용하여 $10 {\times} 10 mm$ 크기를 갖는 80핀 TQFP 패키지로 제작하였으며, 동작전압 3.3V에서 우수한 RF 성능을 얻었다. 제작된 RFIC의 수신단에는 LNA, Down Conversion Mixer, AGC, SW-CAP 및 Down Sampling Mixer를 포함하고 있으며, 제작된 RFIC의 사용 주파수 범위는 925 ~ 960MHz, 전류소모는 67mA, 최소검출레벨은 -105dBm의 특성을 얻었다.

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