• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2018.05a
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• pp.169-170
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• 2018

이진체 상의 타원곡선 B-233을 지원하는 타원곡선 암호 프로세서를 32-비트 워드기반 몽고메리 곱셈기를 이용하여 설계하였다. 스칼라 곱셈을 위해 수정된 몽고메리 래더 (Modified montgomery ladder) 알고리즘을 적용하여 단순 전력분석에 내성을 갖도록 하였으며, Lopez-Dahab 투영 좌표계와 페르마의 소정리(Fermat's little theorem)를 적용하여 하드웨어 자원 소모가 큰 나눗셈과 역원 연산을 제거하여 저면적으로 설계하였다. 설계된 ECC 프로세서는 Xilinx ISim을 이용하여 기능검증을 하였으며, $0.18{\mu}m$ CMOS 셀 라이브러리로 합성한 결과 100 MHz의 동작 주파수에서 9,614 GEs와 4 Kbit RAM으로 구현되었으며, 최대 동작 주파수는 125 MHz로 예측되었다.

• Journal of information and communication convergence engineering
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• v.10 no.1
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• pp.85-90
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• 2012

A 40-MS/sec 10-bit pipelined analog to digital converter (ADC) with a 1.2 Vpp differential input signal is proposed. The implemented pipelined ADC consists of eight stages of 1.5 bit/stage, one stage of 2 bit/stage, a digital error correction block, band-gap reference circuit & reference driver, and clock generator. The 1.5 bit/stage consists of a sub-ADC, digital to analog (DAC), and gain stage, and the 2.0 bit/stage consists of only a 2-bit sub-ADC. A bootstrapped switch with a constant resistance is proposed to improve the linearity of the input switch. It reduces the maximum VGS variation of the conventional bootstrapped switch by 67%. The proposed bootstrapped switch is used in the first 1.5 bit/stage instead of a sample-hold amplifier (SHA). This results in the reduction of the hardware and power consumption. It also increases the input bandwidth and dynamic performance. A reference voltage for the ADC is driven by using an on-chip reference driver without an external reference. A digital error correction with a redundancy is also used to compensate for analog noise such as an input offset voltage of a comparator and a gain error of a gain stage. The proposed pipelined ADC is implemented by using a 0.18-${\mu}m$ 1- poly 5-metal CMOS process with a 1.8 V supply. The total area including a power decoupling capacitor and the power consumption are 0.95 $mm^2$ and 51.5 mW, respectively. The signal-to-noise and distortion ratio (SNDR) is 56.15 dB at the Nyquist frequency, resulting in an effective number of bits (ENOB) of 9.03 bits.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.9
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• pp.1763-1770
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• 2016

This paper proposed hybrid converter to operate over a wide output load power. The switched-capacitor converter has a high efficiency at low load power and a low efficiency at high load power. On the contrary, the buck converter has a high efficiency at high load power and a low efficiency at low load power. The proposed hybrid converter has combination of the switched-capacitor converter and the buck converter. The switched-capacitor operates at low load power and buck converter operates at high load power, so that the hybrid converter is improved power efficiency at wide output load power. The hybrid converter was implemented with a $0.18{\mu}m$ CMOS process. The hybrid converter has a range of the load power between $50{\mu}W$and 100mW. The maximum power efficiencies are 93% and 77% at the buck converter and the switched-capacitor converter, respectively.

• Journal of Sensor Science and Technology
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• v.18 no.4
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• pp.274-279
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• 2009

In this paper, a wide dynamic range active pixel sensor(APS) with output voltage feedback structure has been designed by a 2-poly 4-metal 0.35 $\mu$m standard CMOS technology. We presented a novel APS with output voltage feedback, which exhibits a wide dynamic range. The dynamic range increases at the cost of an additional diode and an additional MOSFET. The output voltage feedback structure enables the control of the output voltage level by itself, as incident light power varies. It is confirmed that the light level which the output voltage level of proposed APS is saturated is about 120,000 lux, which is higher than that of a conventional 3-transistor APS.

• Nuclear Engineering and Technology
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• v.56 no.2
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• pp.568-574
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• 2024

The development of radiation-tolerant radio-frequency (RF) systems can be a solution for applications in extreme radiation environments, such as nuclear power plant monitoring and space exploration. Among the crucial components within an RF system, the low noise amplifier (LNA) stands out due to its vulnerability to TID effects, mainly relying on transistors as its main devices. In this study, the TID effects in the LNA using standard 0.18 ㎛ complementary metal oxide semiconductors (CMOS) technology are estimated and analyzed. The results show that the LNA can withstand absorbed radiation up to 100 kGy. The S₂₁, S₁₁, noise figure (NF), stability (K), and linearity of the third input intercept point (IIP3) slightly shifted from the initial values of 0.8312 dB, 0.793 dB, 0.00381 dB, 1.34406, and 2.36066 dBm, respectively which are still comparable to the typical performances. Moreover, the standard 0.18 ㎛ technology has demonstrated its radiation tolerance, as it exhibits negligible performance degradation in the conventional LNA even when exposed to radiation levels up to 100 kGy. In this context, simulation approach offers a means to predict the TID effects and estimate the radiation exposure limit for electronic devices, particularly when transistors are used as the primary RF components.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.6
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• pp.1250-1259
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• 2012

In this paper, a time-domain comparator is proposed for a successive approximation (SA) analog-to-digital converter (ADC) with a low power and high resolution. The proposed time-domain comparator consists of a voltage-controlled delay converter with a clock feed-through compensation circuit, a time amplifier, and binary phase detector. It has a small input capacitance and compensates the clock feed-through noise. To analyze the performance of the proposed time-domain comparator, two 1V 10-bit 200-kS/s SA ADCs with a different time-domain comparator are implemented by using 0.18-${\mu}m$ 1-poly 6-metal CMOS process. The measured SNDR of the implemented SA ADC is 56.27 dB for the analog input signal of 11.1 kHz, and the clock feed-through compensation circuit and time amplifier of the proposed time-domain comparator enhance the SNDR of about 6 dB. The power consumption and area of the implemented SA ADC are 10.39 ${\mu}W$ and 0.126 mm2, respectively.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.6
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• pp.1154-1162
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• 2016

This paper proposes a fast-transient digital LDO(Low dropout) regulator with binary-weighted current control technique. Conventional digital LDO takes a long time to stabilize the output voltage, because it controls the amount of current step by step, thus ringing problem is generated. Binary-weighted current control technique rapidly stabilizes output voltage by removing the ringing problem. When output voltage reliably reaches the target voltage, It added the FRZ mode(Freeze) to stop the operation of digital LDO. The proposed fast response digital LDO is used with a slow response DC-DC converter in the system which rapidly changes output voltage. The proposed digital controller circuit area was reduced by 56% compared to conventional bidirectional shift register, and the ripple voltage was reduced by 87%. A chip was implemented with a $0.18{\mu}F$ CMOS process. The settling time is $3.1{\mu}F$ and the voltage ripple is 6.2mV when $1{\mu}F$ output capacitor is used.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.10
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• pp.34-39
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• 2016

A low-voltage, low-power analog front-end IC for neural recording implant devices is presented. The proposed IC consists of a low-noise neural amplifier and a programmable active bandpass filter to process neural signals residing in the band of 1 Hz to 5 kHz. The neural amplifier is based on a source-degenerated folded-cascode operational transconductance amplifier (OTA) for good noise performance while the following bandpass filter utilizes a low-power current-mirror based OTA with programmable high-pass cutoff frequencies from 1 Hz to 300 Hz and low-pass cutoff frequencies from 300 Hz to 8 kHz. The total recording analog front-end provides 53.1 dB of voltage gain, $4.68{\mu}Vrms$ of integrated input referred noise within 1 Hz to 10 kHz, and noise efficiency factor of 3.67. The IC is designed using $18-{\mu}m$ CMOS process and consumes a total of $3.2{\mu}W$ at 1-V supply voltage. The layout area of the IC is $0.19 mm^2$.

• 전자공학회논문지 IE
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• v.46 no.4
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• pp.1-7
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• 2009

The final goal of ITS and ETC will be to improve the traffic efficiency and mobile safety without new road construction. DSRC system is emerging nowadays as a solution of them. China DSRC standard which was released in May 2007 has low bit rate, short message and simple MAC control. The DSRC system users want a long lifetime over 1 year with just one battery. In this paper, we propose the SoC of very low power consumption architecture. Several digital logic concept and analog power control logics were used for very low power consumption. The SoC operation mode and clock speed, operation voltage range, wakeup signal detector, analog comparator and Internal Voltage Regulator & External Power Switch were designed. We confirmed that the SoC power consumption is under 8.5mA@20Mhz, 0.9mA@1Mhz in active mode, and under 5uA in power down mode, by computer simulation. The design of SoC was finished on Aug. 2008, and fabricated on Nov. 2008 with $0.18{\mu}m$ CMOS process.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.35C no.9
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• pp.11-20
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• 1998

High-speed complex-number arithmetic units are essential to baseband signal processing of modern digital communication systems such as channel equalization, timing recovery, modulation and demodulation. In this paper, a new complex-number multiplication algorithm is proposed, which is based on redundant binary (RB) arithmetic combined with radix-4 Booth recoding scheme. The proposed algorithm reduces the number of partial product by one-half as compared with the conventional direct method using real-number multipliers and adders. It also leads to a highly parallel architecture and simplified circuit, resulting in high-speed operation and low power dissipation. To demonstrate the proposed algorithm, a prototype complex-number multiplier-accumulator (CMAC) core with 10-bit operands has been designed using 0.8-$\mu\textrm{m}$ N-Well CMOS technology. The designed CMAC core contains about 18,000 transistors on the area of about 1.60 ${\times}$ 1.93 $\textrm{mm}^2$. The functional and speed test results show that it can operate with 120-MHz clock at V$\sub$DD/=3.3-V, and its power consumption is given to about 63-mW.