• Title/Summary/Keyword: 0.18 ${\mu}m$ CMOS

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A Low Voltage Bandgap Current Reference with Low Dependence on Process, Power Supply, and Temperature

  • Cheon, Jimin
    • Journal of Advanced Information Technology and Convergence
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    • v.8 no.2
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    • pp.59-67
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    • 2018
  • The minimum power supply voltage of a typical bandgap current reference (BGCR) is limited by operating temperature and input common mode range (ICMR) of a feedback amplifier. A new BGCR using a bandgap voltage generator (BGVG) is proposed to minimize the effect of temperature, supply voltage, and process variation. The BGVG is designed with proportional to absolute temperature (PTAT) characteristic, and a feedback amplifier is designed with weak-inversion transistors for low voltage operation. It is verified with a $0.18-{\mu}m$ CMOS process with five corners for MOS transistors and three corners for BJTs. The proposed circuit is superior to other reported current references under temperature variation from $-40^{\circ}C$ to $120^{\circ}C$ and power supply variation from 1.2 V to 1.8 V. The total power consumption is $126{\mu}W$ under the conditions that the power supply voltage is 1.2 V, the output current is $10{\mu}A$, and the operating temperature is $20^{\circ}C$.

A CMOS 5.4/3.24-Gbps Dual-Rate CDR with Enhanced Quarter-Rate Linear Phase Detector

  • Yoo, Jae-Wook;Kim, Tae-Ho;Kim, Dong-Kyun;Kang, Jin-Ku
    • ETRI Journal
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    • v.33 no.5
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    • pp.752-758
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    • 2011
  • This paper presents a clock and data recovery circuit that supports dual data rates of 5.4 Gbps and 3.24 Gbps for DisplayPort v1.2 sink device. A quarter-rate linear phase detector (PD) is used in order to mitigate high speed circuit design effort. The proposed linear PD results in better jitter performance by increasing up and down pulse widths of the PD and removes dead-zone problem of charge pump circuit. A voltage-controlled oscillator is designed with a 'Mode' switching control for frequency selection. The measured RMS jitter of recovered clock signal is 2.92 ps, and the peak-to-peak jitter is 24.89 ps under $2^{31}-1$ bit-long pseudo-random bit sequence at the bitrate of 5.4 Gbps. The chip area is 1.0 mm${\times}$1.3 mm, and the power consumption is 117 mW from a 1.8 V supply using 0.18 ${\mu}m$ CMOS process.

A Fast RSSI using Novel Logarithmic Gain Amplifiers for Wireless Communication

  • Lee, Sung-Ho;Song, Yong-Hoon;Nam, Sang-Wook
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.9 no.1
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    • pp.22-28
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    • 2009
  • This paper presents a fast received signal strength indicator (RSSI) circuit for wireless communication application. The proposed circuit is developed using power detectors and an analog-to-digital converter to achieve a fast settling time. The power detector is consisted of a novel logarithmic variable gain amplifier (VGA), a peak detector, and a comparator in a closed loop. The VGA achieved a wide logarithmic gain range in a closed loop form for stable operation. For the peak detector, a fast settling time and small ripple are obtained using the orthogonal characteristics of quadrature signals. In $0.18-{\mu}m$ CMOS process, the RSSI value settles down in $20{\mu}s$ with power consumption of 20 mW, and the maximum ripple of the RSSI is 30 mV. The proposed RSSI circuit is fabricated with a personal handy-phone system transceiver. The active area is $0.8{\times}0.2\;mm^2$.

Design and Implement of 50MHz 10 bits DAC based on double step Thermometer Code (50MHz 2단 온도계 디코더 방식을 사용한 10 bit DAC 설계)

  • Jung, Jun-Hee;Kim, Young-Sik
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.49 no.6
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    • pp.18-24
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    • 2012
  • This paper reports the test results of a 50MHz/s 10 bits DAC developed with $0.18{\mu}m$ CMOS process for the wireless sensor network application. The 10bits DAC, not likely a typical segmented type, has been designed as a current driving type with double step thermometer decoding architecture in which 10bits are divided into 6bits of MSB and 4bits of LSB. MSB 6bits are converted into 3 bits row thermal codes and 3 bits column thermal codes to control high current cells, and LSB 4 bits are also converted into thermal codes to control the lower current cells. The high and the lower current cells use the same cell size while a bias circuit has been designed to make the amount of lower unit current become 1/16 of high unit current. All thermal codes are synchronized with output latches to prevent glitches on the output signals. The test results show that the DAC consumes 4.3mA DC current with 3.3V DC supply for 2.2Vpp output at 50MHz clock. The linearity characteristics of DAC are the maximum SFDR of 62.02dB, maximum DNL of 0.37 LSB, and maximum INL of 0.67 LSB.

A 12 mW ADPLL Based G/FSK Transmitter for Smart Utility Network in 0.18 ㎛ CMOS

  • Park, Hyung-Gu;Kim, Hongjin;Lee, Dong-Soo;Yu, Chang-Zhi;Ku, Hyunchul;Lee, Kang-Yoon
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.13 no.4
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    • pp.272-281
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    • 2013
  • This paper presents low power frequency shift keying (FSK) transmitter using all digital PLL (ADPLL) for smart utility network (SUN). In order to operate at low-power and to integrate a small die area, the ADPLL is adopted in transmitter. The phase noise of the ADPLL is improved by using a fine resolution time to digital converter (TDC) and digitally controlled oscillator (DCO). The FSK transmitter is implemented in $0.18{\mu}m$ 1-poly 6-metal CMOS technology. The die area of the transmitter including ADPLL is $3.5mm^2$. The power consumption of the ADPLL is 12.43 mW. And, the power consumptions of the transmitter are 35.36 mW and 65.57 mW when the output power levels are -1.6 dBm and +12 dBm, respectively. Both of them are supplied by 1.8 V voltage source. The frequency resolution of the TDC is 2.7 ps. The effective DCO frequency resolution with the differential MOS varactor and sigma-delta modulator is 2.5 Hz. The phase noise of the ADPLL output at 1.8 GHz is -121.17 dBc/Hz with a 1 MHz offset.

A High-Resolution Dual-Loop Digital DLL

  • Kim, Jongsun;Han, Sang-woo
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.16 no.4
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    • pp.520-527
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    • 2016
  • A new dual-loop digital delay-locked loop (DLL) using a hybrid (binary + sequential) search algorithm is presented to achieve both wide-range operation and high delay resolution. A new phase-interpolation range selector (PIRS) and a variable successive approximation register (VSAR) algorithm are adopted to resolve the boundary switching and harmonic locking problems of conventional digital DLLs. The proposed digital DLL, implemented in a $0.18-{\mu}m$ CMOS process, occupies an active area of $0.19mm^2$ and operates over a wide frequency range of 0.15-1.5 GHz. The DLL dissipates a power of 11.3 mW from a 1.8 V supply at 1 GHz. The measured peak-to-peak output clock jitter is 24 ps (effective pk-pk jitter = 16.5 ps) with an input clock jitter of 7.5 ps at 1.5 GHz. The delay resolution is only 2.2 ps.

The Design of a 0.15 ps High Resolution Time-to-Digital Converter

  • Lee, Jongsuk;Moon, Yong
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.15 no.3
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    • pp.334-341
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    • 2015
  • This research outlines the design of a HR-TDC (High Resolution Time-to-Digital Converter) for high data rate communication systems using a $0.18{\mu}m$ CMOS process. The coarse-fine architecture has been adopted to improve the resolution of the TDC. A two-stage vernier time amplifier (2S-VTA) was used to amplify the time residue, and the gain of the 2S-VTA was larger than 64. The error during time amplification was compensated using two FTDCs (Fine-TDC) with their outputs. The resolution of the HR-TDC was 0.15 ps with a 12-bit output and the power consumption was 4.32 mW with a 1.8-V supply voltage.

Design of PLL Frequency Synthesizer for a 915MHz ISM Band wireless transponder using CPFSK communication (CPFSK communication 사용한 915MHz ISM Band 위한 PLL Frequency Synthesizer 설계)

  • Kim, Seung-Hoon;Cho, Sang-Bock
    • Proceedings of the KIEE Conference
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    • 2007.04a
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    • pp.286-288
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    • 2007
  • In this paper, the fast locking PLL Frequency Synthesizer with low phase noise in a 0.18um CMOS process is presented. Its main application IS for the 915MHz ISM band wireless transponder upon the CPFSK (Continuous Phase Frequency Shift Keying) modulation scheme. Frequency synthesizer, which in this paper, is designed based on self-biased techniques and is independent with processing technology when damping factor and bandwidth fixed to most important parameters as operating frequency ratio, broad frequency range, and input phase offset cancellation. The proposed frequecy synthesizer, which is fully-integrated and is in 320M $^{\sim}$ 960MHz of the frequency range with 10MHz of frequency resolution. And its is implemented based on integer-N architecture. Its power consumption is 50mW at 1.8V of supply voltage and core area is $540{\mu}m$ ${\times}$ $450{\mu}m$. The measured phase noises are -117.92dBc/Hz at 10MHz offset, with low settling time less than $3.3{\mu}s$.

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A 8192-Point FFT Processor Based on the CORDIC Algorithm for OFDM System (CORDIC 알고리듬에 기반 한 OFDM 시스템용 8192-Point FFT 프로세서)

  • Park, Sang-Yoon;Cho, Nam-Ik
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.27 no.8B
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    • pp.787-795
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    • 2002
  • This paper presents the architecture and the implementation of a 2K/4K/8K-point complex Fast Fourier Transform(FFT) processor for Orthogonal Frequency-Division Multiplexing (OFDM) system. The architecture is based on the Cooley-Tukey algorithm for decomposing the long DFT into short length multi-dimensional DFTs. The transposition memory, shuffle memory, and memory mergence method are used for the efficient manipulation of data for multi-dimensional transforms. Booth algorithm and the COordinate Rotation DIgital Computer(CORDIC) processor are employed for the twiddle factor multiplications in each dimension. Also, for the CORDIC processor, a new twiddle factor generation method is proposed to obviate the ROM required for storing the twiddle factors. The overall 2K/4K/8K-FFT processor requires 600,000 gates, and it is implemented in 1.8 V, 0.18 ${\mu}m$ CMOS. The processor can perform 8K-point FFT in every 273 ${\mu}s$, 2K-point every 68.26 ${\mu}s$ at 30MHz, and the SNR is over 48dB, which are enough performances for the OFDM in DVB-T.

An Integrated Si BiCMOS RF Transceiver for 900 MHz GSM Digital Handset Application (I) : RF Receiver Section (900MHz GSM 디지털 단말기용 Si BiCMOS RF송수신 IC개발 (I) : RF수신단)

  • Park, In-Shig;Lee, Kyu-Bok;Kim, Jong-Kyu;Kim, Han-Sik
    • Journal of the Korean Institute of Telematics and Electronics S
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    • v.35S no.9
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    • pp.9-18
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    • 1998
  • A single RF transceiver chip for an extended GSM handset application was designedm, fabricated and evaluated. A RFIC was fabricated by using silicon BiCMOS process, and then packaged in 80 pin TQFP of $10 {\times} 10 mm^{2}$ in size. As a result, it was achieved guite reasonable integraty and good RF performance at the operation voltage of 3.3V. This paper describes development results of RF receiver section of the RFIC, which includes LNA, down conversion mixer, AGC, switched capacitor filter and down sampling mixer. The test results show that RF receiver section is well operated within frequency range of 925 ~960 MHz, which is defined on the extended GSM specification (E-GSM). The receiver section also reveals moderate power consumption of 67 mA and minimum detectable signal of -105 dBm.

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