• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.12
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• pp.2933-2938
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• 2014

In this paper, the FLL(Frequency Locked Loop) circuit using current conveyor circuit is designed by $0.35{\mu}m$ CMOS process. The FLL circuit is built in a frequency divider, a frequency-to-voltage converter, a voltage subtractor and a oscillator and the circuit blocks have a symmetric structure to improve a reliability characteristics with a process variation. From the simulation results, the variation rate of output frequency is about less than ${\pm}1%$ when the channel length, channel width, resistance and capacitance are varied ${\pm}5%$.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.7
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• pp.82-88
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• 2014

An available capacitance increasing phase-locked loop(PLL) with two voltage controlled oscillator gains has been proposed. In this paper, the available capacitance of loop filter is increased by using two positive/negative gains of voltage controlled oscillator (VCO). It results in 1/10 reduction in the size of loop filter capacitor. It has been designed with a 1.8V $0.18{\mu}m$ CMOS process. The simulation results show that the proposed PLL has the same phase noise characteristic and a locking time of conventional PLL.

• Journal of IKEEE
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• v.19 no.2
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• pp.260-264
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• 2015

In this paper, we propose mode selector for operating a switching system and regulator of linear system to detect the load current. The proposed mode selector can be a mode switching of linear system and switching system, and it has been proposed to compensate for the disadvantages of regulator of switching system with low efficiency in light load conditions. At light load conditions, the mode selector is possible to provide a high efficiency in light load condition by switching the mode to the regulator of linear system. The mode selector was designed to using a Dongbu Hitek $0.18{\mu}m$ CMOS process.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2010.05a
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• pp.483-485
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• 2010

A 200kS/s 10-bit successive approximation(SA) ADC with a rail-to-rail input range is proposed. The proposed SA ADC consists of DAC, comparator, and successive approximation register(SAR) logic. The folded-type capacitor DAC with the boosted NMOS switches is used to reduce the power consumption and chip area. Also, the time-domain comparator which uses a fully differential voltage-to-time converter improves the PSRR and CMRR. The SAR logic uses the flip-flop with a half valid window, it results in the reduction of the power consumption and chip area. The proposed SA ADC is designed by using a $0.18{\mu}m$ CMOS process with 1V supply.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.12
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• pp.2257-2261
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• 2007

A new CMOS transresistance amplifier for low-voltage analog integrated circuit design applications is presented. The proposed transresistance amplifier circuit based on common-source and negative feedback topology is compared with other recent reported transresistance amplifier. The proposed transresistance amplifier achieves high transresistance gain, gain-bandwidth with the same input/output impedance and the minimum supply voltage $2V_{DSAT}+V_T$. Hspice simulation using 1.8V TSMC $0.18{\mu}m$ CMOS technology was performed and achieved $59dB{\Omega}$ transresistance gain which is above the maximum about $18dB{\Omega}$ compared to transresistance gain of the reported circuit.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.5
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• pp.831-835
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• 2016

In this paper, a dual-channel feed-forward transimpedance(TIA) array is realized in a standard $0.18-{\mu}m$ CMOS technology which exploits automatic gain control function to provide 40-dB input dynamic range for either detecting targets nearby or sensing imminent danger situations. Compared to the previously reported conventional feed-forward TIA, the proposed automatic-gain-control feed-forward TIA(AFF-TIA) extends the input dynamic range 25 dB wider by employing a 4-level automatic gain control circuit. Measured results demonstrate the linearly varying transimpedance gain of 47 to $72dB{\Omega}$, input dynamic range of 1:100, the bandwidth of $${\geq_-}670MHz$$, the equivalent input referred noise current spectral density of 6.9 pA/${\surd}$HZ, the maximum sensitivity of -26.8 dBm for $10^{-12}BER$, and the power consumption of 27.6 mW from a single 1.8-V supply. The dual-channel chip occupies the area of $1.0{\times}0.73mm^2$ including I/O pads.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.8
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• pp.1-10
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• 2008

In this paper, we describe a design of a 128bit MRAM based on a new switching architecture which is Local Field Switching(LFS). LFS uses a local magnetic field generated by the current flowing through an MTJ. This mode reduces the writing current since small current can induce large magnetic field because of close distance between MTJ and the current. It also improves the cell selectivity over using conventional MTJ architecture because it doesn't need a digit line for writing. The MRAM has 1-Transistor 1-Magnetic Tunnel Junction (IT-1MTJ) memory cell structure and uses a bidirectional write driver, a mid-point reference cell block and a current mode sense amplifier. CMOS emulation cell is adopted as an LFS-MTJ cell to verify the operation of the circuit without the MTJ process. The memory circuit is fabricated using a $0.18{\mu}m$ CMOS technology with six layers o) metal and tested on custom board.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.2
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• pp.330-336
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• 2007

A single pixel photon counting type image sensor which is applicable for medical diagnosis with digitally obtained image and industrial purpose has tern designed with $0.18{\mu}m$ triple-well CMOS process. The designed single pixel for readout chip is able to be operated by single supply voltage to simplify digital X-ray image sensor module and a preamplifier which is consist of folded cascode CMOS operational amplifier has been designed to enlarge signal voltage(${\Delta}Vs$), the output voltage of preamplifier. And an externally tunable threshold voltage generator circuit which generates threshold voltage in the readout chip has been newly proposed against the conventional external threshold voltage supply. In addition, A dark current compensation circuit for reducing dark current noise from photo diode is proposed and 15bit LFSR(Linear Feedback Shift Resister) Counter which is able to have high counting frequency and small layout area is designed.

• Journal of electromagnetic engineering and science
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• v.11 no.1
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• pp.27-33
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• 2011

In this paper, we propose a high gain, current reused ultra wideband (UWB) low noise amplifier (LNA) that uses TSMC 0.18 ${\mu}m$ CMOS technology. To satisfy the wide input matching and high voltage gain requirements with low power consumption, a resistive current reused technique is utilized in the first stage. A ${\pi}$-type LC network is adopted in the second stage to achieve sufficient gain over the entire frequency band. The proposed UWB LNA has a voltage gain of 12.9~18.1 dB and a noise figure (NF) of 4.05~6.21 dB over the frequency band of interest (1~10 GHz). The total power consumption of the proposed UWB LNA is 10.1 mW from a 1.4 V supply voltage, and the chip area is $0.95{\times}0.9$ mm.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.11
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• pp.84-91
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• 2009

A high speed serial link transmitter using multi-level signaling is proposed. To achieve high data rate m high speed serial link, 4-pulse amplitude modulation (PAM) is used. By transmitting 2 bit data in each symbol time, high speed data transmission, two times than binary signaling, is achieved. The transmitter transmits current-mode output instead of voltage-mode output Current-mode output is much faster than voltage-mode output, so higher data transmission is available by increasing switching speed of driver. $2^5-1$ pseudo-random bit sequence (PRBS) generator is contained to perform built-in self test (BIST). The 4-PAM transmitter is designed in Dongbu HiTek $0.18{\mu}m$ CMOS technology and achieves 8 Gb/s, 160 mV of eye height with 1.8 V supply voltage. The transmitter consumes only 98 mW for 8 Gb/s transmission.