Browse > Article
http://dx.doi.org/10.6109/jkiice.2007.11.2.330

Analysis of Leakage Current of a Laser Diode by Equivalent Circuit Model  

Choi, Young-Kyu (신라대학교 전자공학과)
Kim, Ki-Rae (신라대학교 전자공학과)
Abstract
A single pixel photon counting type image sensor which is applicable for medical diagnosis with digitally obtained image and industrial purpose has tern designed with $0.18{\mu}m$ triple-well CMOS process. The designed single pixel for readout chip is able to be operated by single supply voltage to simplify digital X-ray image sensor module and a preamplifier which is consist of folded cascode CMOS operational amplifier has been designed to enlarge signal voltage(${\Delta}Vs$), the output voltage of preamplifier. And an externally tunable threshold voltage generator circuit which generates threshold voltage in the readout chip has been newly proposed against the conventional external threshold voltage supply. In addition, A dark current compensation circuit for reducing dark current noise from photo diode is proposed and 15bit LFSR(Linear Feedback Shift Resister) Counter which is able to have high counting frequency and small layout area is designed.
Keywords
X-ray image sensor; single photon counting; preamplifier; comparator; threshold voltage generator; 15bit LFSR counter;
Citations & Related Records
연도 인용수 순위
  • Reference
1 E. Yablonovitch, and E. O. Kane, 'Reduction of lasing threshold current density by the lowering of valence band effective mass,' IEEE J. Lightwave Technol., vol. LT-4, no. 6, pp. 504-506, 1986
2 MARTINUS P. J. G. VERSLEIJEN, P. I. KUlNDERSMA, GIOK-DJAN D. KHOE, SENIOR MEMBER, IEEE, AND LAMBERTUS J. MEULEMAN, 'Accurate Analysis of dc Electrical Characteristics of $1.3\;{\mu}m$ DCPBH Laser Diodes,' IEEE J. Quantum Electron., vol. 23, no. 6, pp. 925-935, 1987   DOI
3 Ho Sung CHO, Dong Hoon JANG, Jung Kee LEE, Kyung Hyun PARK, Jeong Soo KIM, Seung Won LEE, Hong Man KIM and Hyung-MooPARK,' High-Performance Strain-Compensate Multiple Quantum Well Planar Buried Heterostructure Laser Diodes with Low Leakage Current,' Jpn. J. Appl. Phys. vol. 35, no. 3, pp. 1751-1757, 1996   DOI
4 C. H. Henry, R. A. Logan, and F. R. Merrit, 'The effect of intervalence band absorption on the thermal behavior of InGaAsP lasers,' IEEE J. Quantum Electron., vol. QE-19, no. 6, pp. 947-952, 1983
5 H. C. Casey, Jr., 'Temperature dependence of the threshold current density in InP-GaO.28In0.72 As0.6P0.4(${\lambda}=1.3{\mu}m$) double heterostructure lasers,' J. Appl. Phys., vol. 56, pp. 1959-1964, 1984   DOI   ScienceOn
6 山田搏仁, 'A Spice Model for Laser diode,' 電子情報通信學會誌, vol. 85, no. 6, pp. 434-437, 2002
7 H. Yasada, R. Iga, Y. Noguchi, and Y. Yoshikuni, 'Pure effects of strain in strained-layer multple-quantum-well lasers,' IEEE J. Quantum Electron., vol. QE-29, no. 4, pp. 1098-1103, 1993