• The Journal of Korean Institute of Communications and Information Sciences
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• v.33 no.11C
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• pp.963-969
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• 2008

This paper presents 6bit 100MHz Interpolation Flash Analog-to-Digital Converter, which can be applied to the Receiver of Wireless Tele-communication System. The 6bit 100MHz Flash Analog-to-Digital Converter simplifies and integrates S-R latch which multiplies as the resolution increases. Whereas the conventional NAND based S-R latch needed eight MOS transistors, this Converter was designed with only six, which makes the Dynamic Power Dissipation of the A/D Converter reduced up to 12.5%. The designed A/D Converter went through $0.18{\mu}m$ CMOS n-well 1-poly 6-metal process to be a final product, and the final product has shown 282mW of power dissipation with 1.8V of Supply Voltage, 100MHz of conversion rate. And 35.027dBc, 31.253dB SFDR and 4.8bits, 4.2bits ENOB with 12.5MHz, 50MHz of each input frequency.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.10a
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• pp.357-360
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• 2013

A 1.8V 2-Gb/s scalable low voltage signaling (SLVS) transmitter (TX) is designed for mobile applications requiring high speed and low power consumption. It consists of 4-lane TX for data transmission, 1-lane TX for a source synchronous clocking, and a 8-phase clock generator. The proposed SLVS TX has the scaling voltage swing from 50 mV to 650 mV and supports a high speed (HS) mode and a low power (LP) mode. An output impedance calibration scheme for the SVLS TX is proposed to improve the signal integrity. The proposed SLVS TX is implemented by using a $0.18-{\mu}m$ 1-poly 6-metal CMOS with a 1.8V supply. The simulated data jitter of the implemented SLVS TX is about 8.04 ps at the data rate of 2-Gbps. The area and power consumption of the 1-lane of the proposed SLVS TX are $422{\times}474{\mu}m^2$ and 5.35 mW/Gb/s, respectively.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.2
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• pp.322-329
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• 2007

A single pixel photon counting type image sensor which is applicable for medical diagnosis with digitally obtained image and industrial purpose has been designed with $0.18{\mu}m$ triple-well CMOS process. The designed single pixel for readout chip is able to be operated by single supply voltage to simplify digital X-ray image sensor module and a preamplifier which is consist of folded cascode CMOS operational amplifier has been designed to enlarge signal voltage(${\Delta}Vs$), the output voltage of preamplifier. And an externally tunable threshold voltage generator circuit which generates threshold voltage in the readout chip has been newly proposed against the conventional external threshold voltage supply. In addition, A dark current compensation circuit for reducing dark current noise from photo diode is proposed and 15bit LFSR(Linear Feedback Shift Resister) Counter which is able to have high counting frequency and small layout area is designed.

• Journal of electromagnetic engineering and science
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• v.5 no.3
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• pp.112-116
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• 2005

This paper presents a broadband two-stage low noise amplifier(LNA) operating from 3 to 10 GHz, designed with 0.18 ${\mu}m$ RF CMOS technology, The cascode feedback topology and broadband matching technique are used to achieve broadband performance and input/output matching characteristics. The proposed UWB LNA results in the low noise figure(NF) of 3.4 dB, input/output return loss($S_{11}/S_{22}$) of lower than -10 dB, and power gain of 14.5 dB with gain flatness of $\pm$1 -dB within the required bandwidth. The input-referred third-order intercept point($IIP_3$) and the input-referred 1-dB compression point($P_{ldB}$) are -7 dBm and -17 dBm, respectively.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.5
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• pp.1155-1161
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• 2014

This paper proposes a start-up voltage generator for reducing the minimum input supply voltage of DC-DC boost converters to 250mV. The proposed start-up voltage generator boosts 250mV input voltage to over 500mV to charge the capacitor for starting the boost converter. After the boost converter operates initially with the supply voltage charged in the capacitor, it uses its boosted output voltage for the supply voltage. Therefore, after the start-up operation, the proposed DC-DC boost converter works as the same as the conventional one. The proposed start-up voltage generator reduces the threshold voltage of the transistors by adjusting the body voltage at a low input voltage. This causes the higher clock frequency and the larger current to a Dickson charge-pump for boosting the input voltage. The proposed start-up voltage generator was implemented with a $0.18{\mu}m$ CMOS process. Its clock frequency and output voltage were 34.5kHz and 522mV at 250mV input voltage, respectively.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.6 s.360
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• pp.28-33
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• 2007

The front-end system having a capable of 2x reading and writing of BD-R/Ra/ROM is developed. Its readability is improved by adopting 5-tap adaptive partial response maximum likelihood (PRML) with the PR(a,b,c,d,e) type channel. Due to the proposed PRML, less than $2{\times}10^{-4}$ of the bit error rate (BER) is achieved with radial and tangential tilt margin of over${\mp}0.6{\circ}$ on 25GB disc in 2x speed. The method of an optimum Power control (OPC) for stable writing of various BD-R/RE is proposed. The developed chip contains 14-million transistors in a $60mm^2$ dies, and is fabricated in $0.18-{\mu}m$ CMOS technology.

• Journal of the Institute of Electronics Engineers of Korea CI
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• v.43 no.6 s.312
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• pp.10-16
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• 2006

This paper proposed a carry lookahead (CLA) circuitry design. It was based on dynamic circuit aiming at delay reduction in an addition of BCD coded decimal numbers. The performance of these decimal adders is analyzed demonstrating their speed improvement. Timing simulation on the proposed decimal addition circuit employing $0.18{\mu}m$ CMOS technology yielded the worst-case delay of 0.83 ns at 16-digit. The proposed scheme showed a speed improvement compared to several schemes for decimal addition.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.12
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• pp.49-55
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• 2013

A high-voltage highly-integrated analog front-end (AFE) IC for medical ultrasound imaging applications is implemented using standard 0.18-${\mu}m$ CMOS process. The proposed AFE IC is composed of a high-voltage (HV) pulser utilizing stacked transistors generating up to 15 Vp-p pulses at 2.6 MHz, a low-voltage low-noise transimpedance preamplifier, and a HV switch for isolation between the transmit and receive parts. The designed IC consumes less than $0.15mm^2$ of core area, making it feasible to be applied for multi-array medical ultrasound imaging systems, including portable handheld applications.

• 전자공학회논문지 IE
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• v.49 no.1
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• pp.1-6
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• 2012

For the performance improvement of a time-to-digital converter(TDC), a 2-stage high resolution TDC has been designed by using a 2-stage vernier time amplifier(2-S VTA). The two stage vernier time amplifier which has a gain over 64 of the resolution can enhance the resolution of the whole two stage TDC. Because of using a vernier TDC, the structure is not limited to advanced processes for achieving high resolution. The proposed TDC has been designed in a $0.18{\mu}m$ CMOS process and simulated with a 1.8V supply voltage. The entire input range is 512ps, and the full resolution 0.125ps.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.5
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• pp.989-998
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• 2012

A ratio type of capacitance measurement circuit is proposed to measure an extremely small value of the fF capacitance on this paper. This measurement circuit is formed with a switched-capacitor integrator, a comparator, and logic circuit blocks to control the switches. It converts the measured ratio value between the known value of on-chip capacitor and the unknown value of capacitor to the digital signal. The fF capacitance with minimized error can be obtained by calculating this ratio. This proposed circuit is designed with standard CMOS $0.18{\mu}m$ process, and various HSpice simulations prove that this capacitance measurement circuit is able to measure the capacitance under 5fF with less than ${\pm}0.3%$ error rate.