• Title/Summary/Keyword: 컨덕턴스 모델

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Analysis of sub-20nm MOSFET Transconductance characteristic by Channel Lenght (채널 길이에 따른 20nm 이하 MOSFET의 전달컨덕턴스 특성 분석)

  • Han, Jihyung;Jung, Hakkee;Lee, Jaehyung;Jeong, Dongsoo;Lee, Jongin;Kwon, Ohshin
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2009.10a
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    • pp.935-937
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    • 2009
  • 본 논문에서는 MicroTec을 이용한 채널 길이에 따른 20nm이하 MOSFET의 전달컨덕턴스의 특성을 분석하였다. 전달컨덕턴스는 게이트 전압의 변화에 의한 드레인 전류의 변화이다. MicroTec의 이동도 모델중 Lombardi, Constant, Yamaguchi 모델을 선택하여 이동도 모델에 따른 gm(전달컨덕턴스)를 비교하였다. 인가전압은 소스 0V, 기판 0V, 드레인 0.1V, 게이트는 -2.5V에서 4.5V까지 증가시켰다. 채널의 길이가 줄어들수록 gm(전달컨덕턴스)의 최대값과 드레인 전류가 증가함을 알 수 있었다.

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Flow Rate Prediction of Pneumatic Pipe System Using Concept of Conductance (컨덕턴스의 개념을 사용한 공압관 시스템의 유량 예측)

  • Kim, Jin-Hyeon;Deng, Ruoyu;Kim, Heuy-Dong
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.38 no.5
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    • pp.431-436
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    • 2014
  • Conductance is a concept contrary to flow resistance and is extensively used as a flow index on how easily fluid is transported through a pneumatic pipe or fluid device. However, research on flow conductance is very rare to date, and a systematic investigation is needed for the standardization of pneumatic devices. In the present study, a computational fluid dynamics method was applied to solve the compressible Navier-Stokes equations with two-equation turbulence models. The present CFD results were validated with existing experimental data. The conductance values and friction factors at the inlet and outlet of a pneumatic pipe were used to assess the flow rates. The present results showed that the conductance depends on the pressure ratio at the inlet and outlet of a pipe.

Electronic Ballast Design for Ceramic MHL by using Its Conductance Model (세라믹 MHL의 컨덕턴스 모델을 이용한 전자식 안정기 설계)

  • Park, Chong-Yeon;Shin, Dong-Seok
    • Journal of Industrial Technology
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    • v.28 no.B
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    • pp.117-122
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    • 2008
  • This paper presents the conductance model at high frequency of the Ceramic Metal Halide Lamp and the designing method of the electronic ballast with the LCC resonant tank type by using that model. Conductance model is based on a physical phenomenon in the discharge tube of the lamp and model constants of conductance model are obtained by Least Squares Method. After equivalent impedances are determined by the conductance model, The LCC resonance tank is designed by using the equation of the lamp power. Simulation result using PSpice software and experimental results show that the conductance model in this paper is very useful to design the electronic ballast at high frequency for the Ceramic Metal Halide Lamps.

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Self-Radiation Impedance of rectangular Acoustic Sensor Without Baffle (배플이 없는 사각형 음향센서의 자기방사 임피던스)

  • Lee, Jong-Kil;Seo, In-Chang
    • The Journal of the Acoustical Society of Korea
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    • v.14 no.4
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    • pp.82-88
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    • 1995
  • Conductance and susceptance of the self-radiation impedance in a rectangular acoustic sensor without baffle are measured experimentally. Finite polyurethane window is mounted at the end of the acoustic sensor. The sensor radiation impedance is cauculated using the equivalent electric circuit. Using the Levine's integral equations of a rectangular piston mounted to the rigid infinite baffle, radiation resistance and reactance were simulated numerically. Numerical and experimental results are compared to each other.

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Quanrum Ballistic Transport in a Two-Dimensional Electron Gas (2차원 전자개스에서 양자 탄동적 수송현상)

  • 최점수;정문성
    • Journal of the Korean Vacuum Society
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    • v.4 no.2
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    • pp.224-229
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    • 1995
  • 쌍곡선 모델을 사용하여 미시 통로죔을 통과하는 2차원 전자들의 양자 탄동적 수송현상을 연구하였다. 통로죔은 타원좌표계($\alpha$, $\beta$)에서 $\beta$=$\beta$o, $\pi$-$\beta$o로 주어지는 두 쌍곡선으로 기술하였다. 양자화된 88컨덕턴스 G는 타원좌표계에서 주어진 슈뢰딩거 방정식과 쌍곡선 경계조건을 만족하는 짝 매튜 함수를 이용하여 계산하였다. 그 결과는 채널수 Nc는 통로죔 폭 W뿐만 아니라 곡률 관련좌표 $\beta$o에 의존함을 나타내었다. 또한 곡률에 의존하는 터널링도 양자화된 G의 그래프의 모양을 나타내는 중요한 요소임을 나타내 주었다. 고정된 통로폭에서 Nc가 일정한 $\beta$o영역에서는 $\beta$o의 연속적 변화에 G는 연속적으로 변화하였지만 $\beta$o가 크게 변화할 때는 Nc가 변화하여 G는 불연속적으로 변화하였다. 만일 터널링이 거의 허용이 안되는 $\beta$o의 영역에서는 G는 계단식의 변화만 보여주었다.

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Development and Validation of a Canopy Photosynthetic Rate Model of Lettuce Using Light Intensity, CO2 Concentration, and Day after Transplanting in a Plant Factory (광도, CO2 농도 및 정식 후 생육시기에 따른 식물공장 재배 상추의 군락 광합성 모델 확립)

  • Jung, Dae Ho;Kim, Tae Young;Cho, Young-Yeol;Son, Jung Eek
    • Journal of Bio-Environment Control
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    • v.27 no.2
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    • pp.132-139
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    • 2018
  • The photosynthetic rate is an indicator of the growth state and growth rate of crops and is an important factor in constructing efficient production systems. The objective of this study was to develop a canopy photosynthetic rate model of romaine lettuce using the three variables of $CO_2$ concentration, light intensity, and growth stage. The canopy photosynthetic rates of the lettuce were measured at five different $CO_2$ concentrations ($600-2,200{\mu}mol{\cdot}mol^{-1}$), five light intensities ($60-340{\mu}mol{\cdot}m^{-2}{\cdot}s^{-1}$), and four growth stages (5-20 days after transplanting) in three closed acrylic chambers ($1.0{\times}0.8{\times}0.5m$). A simple multiplication model expressed by multiplying three single-variable models and the modified rectangular hyperbola model including photochemical efficiency, carboxylation conductance, and dark respiration, which vary with growth stage, were also considered. In validation, the $R^2$ value was 0.923 in the simple multiplication model, while it was 0.941 in the modified rectangular hyperbola model. The modified rectangular hyperbola model appeared to be more appropriate than the simple multiplication model in expressing canopy photosynthetic rates. The model developed in this study will contribute to the determination of an optimal $CO_2$ concentration and light intensity with the growth stage of lettuce in plant factories.

Small signal model and parameter extraction of SOI MOSFET's (SOI MOSFET's의 소신호 등가 모델과 변수 추출)

  • Lee, Byung-Jin;Park, Sung-Wook;Ohm, Woo-Yong
    • 전자공학회논문지 IE
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    • v.44 no.2
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    • pp.1-7
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    • 2007
  • The increasing high frequency capabilities of CMOS have resulted in increased RF and analog design in CMOS. Design of RF and analog circuits depends critically on device S-parameter characteristics, magnitude of real and imaginary components and their behavior as a function of frequency. Utilization of scaled high performance CMOS technologies poses challenges as concerns for reliability degradation mechanisms increase. It is important to understand and quantify the effects of the reliability degradation mechanisms on the S-parameters and in turn on small signal model parameters. Various physical effects influencing small-signal parameters, especially the transconductance and capacitances and their degradation dependence, are discussed in detail. The measured S-parameters of H-gate and T-gate devices in a frequency range from 0.5GHz to 40GHz. All intrinsic and extrinsic parameters are extracted from S-parameters measurements at a single bias point in saturation. In this paper we discuss the analysis of the small signal equivalent circuits of RF SOI MOSFET's verificated for the purpose of exacting the change of parameter of small signal equivalent model followed by device flame.

A Scalable Bias-dependent P-HEMT Noise Model with Single Drain Current Noise Source (드레인 전류 잡음원만을 고려한 스케일링이 가능한 바이어스 의존 P-HEMT 잡음모델)

  • 윤경식
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.24 no.10A
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    • pp.1579-1587
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    • 1999
  • Bias-dependent noise models of $0.2\mu\textrm{m}$ gate length P-HEMT's which are scalable with gate width are proposed. To predict S-parameters of the P-HEMT's the intrinsic parameters except for $\tau$ subtracted the offsets introduced in this paper are normalized to the gate width and then scaled. The small-signal model parameters are expressed as fitting functions of the drain current to $\textrm{I}_{dss}$ ratio and gate width. In addition, to estimate accurately noise parameters the noise temperature $\textrm{T}_{g}$ of the intrinsic resistance, the equivalent noise conductance $\textrm{G}_{ni}$ of the gate current noise source, and the equivalent noise conductance $\textrm{G}_{no}$ of the drain current noise source are adopted as the noise model parameters. The extracted values of $\textrm{T}_{g}$ are nearly independent of drain current and gate width and their average is around the ambient temperature. The extracted values of $\textrm{G}_{ni}$ are small enough to be neglected to the circuit characteristics. From the comparison of the noise model with only $\textrm{G}_{no}$ and that having $\textrm{T}_{g}$, $\textrm{G}_{ni}$ and $\textrm{G}_{no}$ to the measured data it is fund that even the former model is in good agreement with the measured noise parameters. Thus, from a practical point of view the noise model having only the drain current noise source is confirmed as a scalable bias-dependent model.

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Development of A Three-Variable Canopy Photosynthetic Rate Model of Romaine Lettuce (Lactuca sativa L.) Grown in Plant Factory Modules Using Light Intensity, Temperature, and Growth Stage (광도, 온도, 생육 시기에 따른 식물공장 모듈 재배 로메인 상추의 3 변수 군락 광합성 모델 개발)

  • Jung, Dae Ho;Yoon, Hyo In;Son, Jung Eek
    • Journal of Bio-Environment Control
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    • v.26 no.4
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    • pp.268-275
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    • 2017
  • The photosynthetic rates of crops depend on growth environment factors, such as light intensity and temperature, and their photosynthetic efficiencies vary with growth stage. The objective of this study was to compare two different models expressing canopy photosynthetic rates of romaine lettuce (Lactuca sativa L., cv. Asia Heuk romaine) using three variables of light intensity, temperature, and growth stage. The canopy photosynthetic rates of the plants were measured 4, 7, 14, 21, and 28 days after transplanting at closed acrylic chambers ($1.0{\times}0.8{\times}0.5m$) using light-emitting diodes, in which indoor temperature and light intensity were designed to change from 19 to $28^{\circ}C$ and 50 to $500{\mu}mol{\cdot}m^{-2}{\cdot}s^{-1}$, respectively. At an initial $CO_2$ concentration of $2,000{\mu}mol{\cdot}mol^{-1}$, the canopy photosynthetic rate began to be calculated with $CO_2$ decrement over time. A simple multiplication model expressed by simply multiplying three single-variable models and a modified rectangular hyperbola model were compared. The modified rectangular hyperbola model additionally included photochemical efficiency, carboxylation conductance, and dark respiration which vary with temperature and growth stage. In validation, $R^2$ value was 0.849 in the simple multiplication model, while it increased to 0.861 in the modified rectangular hyperbola model. It was found that the modified rectangular hyperbola model was more suitable than the simple multiplication model in expressing the canopy photosynthetic rates affected by environmental factors (light Intensity and temperature) and growth factor (growth stage) in plant factory modules.

Design and Fabrication of 100 GHz MIMIC Amplifier Using Metamorphic HEMT (Metamorphic HEMT를 이용한 100GHz MIMIC 증폭기의 설계 및 제작)

  • 안단;이복형;임병옥;이문교;백용현;채연식;박형무;이진구
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.41 no.9
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    • pp.25-30
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    • 2004
  • In this Paper, the 0.1 w InGaAs/InAlAs/GaAs Metamorphic HEMT, which is applicable to MIMIC, and a 100 GHz MIMIC amplifier were designed and fabricated. The DC characteristics of MHEMT are 640 mA/mm of drain current density, 653 mS/mm of maximum transconductance. The current gain cut-off frequency(fT) is 173 GHz and the maximum oscillation frequency(fmax) is 271 GHz. A 100 GHz amplifier was designed using 0.1${\mu}{\textrm}{m}$ MHEMT and CPW technology. The measured results from the 100 GHz MIMIC amplifiers show good S21 gain of 10.1 dB and 12.74 dB at 100 GHz and 97.8 GHz, respectively.