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Design and Fabrication of 100 GHz MIMIC Amplifier Using Metamorphic HEMT  

안단 (동국대학교 밀리미터과 신기술 연구센터)
이복형 (동국대학교 밀리미터과 신기술 연구센터)
임병옥 (동국대학교 밀리미터과 신기술 연구센터)
이문교 (동국대학교 밀리미터과 신기술 연구센터)
백용현 (동국대학교 밀리미터과 신기술 연구센터)
채연식 (동국대학교 밀리미터과 신기술 연구센터)
박형무 (동국대학교 밀리미터과 신기술 연구센터)
이진구 (동국대학교 밀리미터과 신기술 연구센터)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.41, no.9, 2004 , pp. 25-30 More about this Journal
Abstract
In this Paper, the 0.1 w InGaAs/InAlAs/GaAs Metamorphic HEMT, which is applicable to MIMIC, and a 100 GHz MIMIC amplifier were designed and fabricated. The DC characteristics of MHEMT are 640 mA/mm of drain current density, 653 mS/mm of maximum transconductance. The current gain cut-off frequency(fT) is 173 GHz and the maximum oscillation frequency(fmax) is 271 GHz. A 100 GHz amplifier was designed using 0.1${\mu}{\textrm}{m}$ MHEMT and CPW technology. The measured results from the 100 GHz MIMIC amplifiers show good S21 gain of 10.1 dB and 12.74 dB at 100 GHz and 97.8 GHz, respectively.
Keywords
MIMIC; Metamorphic HEMT; W-band; Amplifier;
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Times Cited By KSCI : 2  (Citation Analysis)
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