• Title/Summary/Keyword: 캐스코드

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Improvement of Gain and Frequency Characteristics of the CMOS Low-voltage Current-mode Integrator (CMOS 저전압 전류모드 적분기의 이득 및 주파수 특성 개선)

  • Ryu, In-Ho;Song, Je-Ho;Bang, Jun-Ho
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.10 no.12
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    • pp.3614-3621
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    • 2009
  • In this paper, A CMOS low-voltage current mode integrator is designed. The designed current-mode integrator is based on linear cascode circuit that is newly proposed in this paper. When it is compared with gain(43.7dB) and unity gain frequency(15.2MHz) of the typical current-mirror type current-mode integrator, the proposed linear cascode current-mode integrator achieves high current gain(47.8dB) and unity gain frequency(27.8MHz). And a 5th Chebyshev current-mode filter with 7.03MHz cutoff frequency is designed. The designed all circuits are simulated by HSPICE using 1.8V-$0.18{\mu}m$ CMOS technology.

A Multi-channel CMOS Low-voltage Filter with Newly Current-mode Integrator (새로운 전류모드 적분기를 갖는 다중 채널 CMOS 저전압 전류모드 필터 설계)

  • Lee, Woo-Choun;Bang, Jun-Ho
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.10 no.12
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    • pp.3638-3644
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    • 2009
  • A CMOS multi-channel low-voltage current mode filter circuit is designed. The designed current-mode filter is based on linear cascode current-mode integrator that is newly proposed in this paper. When it is compared with that of the typical current-mirror type current-mode integrator, the proposed linear cascode current-mode integrator achieves high current gain and unity gain frequency. The designed filter is composed with 5th Chebyshev function and converted to active version by signal flow graph method. We verified that the designed filter can be applied to three-channel basedband, bluetooth, DECT and WCDMA with 0.51MHz~7.03MHz frequency tuning range by Hspice simulation using 1.8V-$0.18{\mu}m$ CMOS technology.

A Gain and NF Dynamic Controllable Wideband Low Noise Amplifier (이득과 잡음 지수의 동적 제어가 가능한 광대역 저 잡음 증폭기)

  • Oh, Tae-Soo;Kim, Seong-Kyun;Huang, Guo-Chi;Kim, Byung-Sung
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.20 no.9
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    • pp.900-905
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    • 2009
  • A common drain feedback CMOS wideband LNA with current bleeding and input inductive series-peaking techniques is presented in this paper. DC coupling is adopted between cascode and feedback amplifiers, so that the gain and NF of the LNA can be dynamically controlled by adjusting the bleeding current. The fabricated LNA shows the bandwidth of 2.5 GHz. The high gain mode shows 17.5 dB gain with $1.7{\sim}2.8\;dB$ NF and consumes 27 mW power and the low gain mode has 14 dB gain with $2.7{\sim}4.0\;dB$ NF and dissipates 1.8 mW from 1.8 V supply.

A Novel Third-Order Cascaded Sigma-Delta Modulator using Switched-Capacitor (스위치형 커패시터를 이용한 새로운 형태의 3차 직렬 접속형 시그마-델타 변조기)

  • Ryu, Jee-Youl;Noh, Seok-Ho
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.14 no.1
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    • pp.197-204
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    • 2010
  • This paper proposes a new body-effect compensated switch configuration for low voltage and low distortion switched-capacitor (SC) applications. The proposed circuit allows rail-to-rail switching operation for low voltage SC circuits and has better total harmonic distortion than the conventional bootstrapped circuit by 19 dB. A 2-1 cascaded sigma-delta modulator is provided for performing the high-resolution analog-to-digital conversion on audio codec in a communication transceiver. An experimental prototype for a single-stage folded-cascode operational amplifier (opamp) and a 2-1 cascaded sigma-delta modulator has been implemented m a 0.25 micron double-poly, triple-metal standard CMOS process with 2.7 V of supply voltage. The 1% settling time of the opamp is measured to be 560 ns with load capacitance of 16 pF. The experimental testing of the sigma-delta modulator with bit-stream inspection and analog spectrum analyzing plot is performed. The die size is $1.9{\times}1.5\;mm$.

Design of the 1.9-GHz CMOS Ring Voltage Controlled Oscillator using VCO-gain-controlled delay cell (이득 제어 지연 단을 이용한 1.9-GHz 저 위상잡음 CMOS 링 전압 제어 발진기의 설계)

  • Han, Yun-Tack;Kim, Won;Yoon, Kwang-Sub
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.46 no.4
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    • pp.72-78
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    • 2009
  • This paper proposes a low phase noise ring voltage controlled oscillator(VCO) with a standard $0.13{\mu}m$ CMOS process for PLL circuit using the VCO-gain-controlled Delay cell. The proposed Delay cell architecture with a active resistor using a MOS transistor. This method can reduced a VCO gain so that improve phase noise. And, Delay cell consist of Wide-Swing Cascode current mirror, Positive Latch and Symmetric load for low phase noise. The measurement results demonstrate that the phase noise is -119dBc/Hz at 1MHz offset from 1.9GHz. The VCO gain and power dissipation are 440MHz/V and 9mW, respectively.

A 3 V 12b 100 MS/s CMOS DAC for High-Speed Communication System Applications (고속통신 시스템 응용을 위한 3 V 12b 100 MS/s CMOS D/A 변환기)

  • 배현희;이명진;신은석;이승훈;김영록
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.40 no.9
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    • pp.685-691
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    • 2003
  • This work describes a 3 V 12b 100 MS/s CMOS digital-to-analog converter (DAC) for high-speed communication system applications. The proposed DAC is composed of a unit current-cell matrix for 8 MSBs and a binary-weighted array for 4 LSBs, considering linearity, power consumption, chip area, and glitch energy. The low-glitch switch driving circuit is employed to improve the linearity and the dynamic performance. Current sources of the DAC are laid out separately from the current-cell switch matrix core. The prototype DAC is implemented in a 0.35 urn n-well single-poly quad-metal CMOS technology. The measured DNL and INL of the prototype DAC are within $\pm$0.75 LSB and $\pm$1.73 LSB, respectively, and the spurious-free dynamic range (SFDR) is 64 dB at 100 MS/s with a 10 MHz input sinewave. The DAC dissipates 91 mW at 3 V and occupies the active die area of 2.2 mm ${\times}$ 2.0 mm.

A Design of High PSRR LDO over Wide Frequency Range without External Capacitor (외부 커패시터 없이 넓은 주파수 범위에서 높은 PSRR 갖는 LDO 설계)

  • Kim, Jin-Woo;Lim, Shin-Il
    • Journal of the Institute of Electronics and Information Engineers
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    • v.50 no.12
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    • pp.63-70
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    • 2013
  • This paper describes a high PSRR low-dropout(LDO) linear regulator for wide frequency range without output-capacitor. Owing to both of the cascode compensation technique and the current buffer compensation technique in nested Miller compensation loop, the proposed LDO not only maintaines high stability but also achieves high PSRR over wide frequency range with reasonable on-chip capacitances. Since the external capacitor is removed by the proposed compensation techniques, the cost for pad is eliminated. The designed LDO works under the input voltage range from 2.5V to 4.5V and provides up to 10mA load current with the output voltage of 1.8V. The LDO was implemented with 0.18um CMOS technology and the area is 300um X 120 um. The measured power supply rejection ratio(PSRR) is -76dB and -43dB at DC and 1MHz, respectively. The operating current is 25uA.

High-Accuracy Current Mirror Using Adaptive Feedback and its Application to Voltage-to-Current Converter (적응성 귀환을 이용한 고정도 전류 미러와 이를 이용한 전압-전류 변환기)

  • Cha, Hyeong-U;Kim, Hak-Yun
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.39 no.4
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    • pp.93-103
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    • 2002
  • A new current mirror for high-accuracy current-mode signal processing and integrated circuit design was proposed. The current mirror adopts the technique of an adaptive feedback to reduce the input impedance and the output stage of regulated cascode current mirror to increase the output impedance. Simulation results show that the current mirror has input impedance of 0.9Ω, the output impedance of 415 MΩ, and current gain of 0.96 at the supply voltage Vcc=5V. The power dissipation is 1.5㎽. In order to certify the applicability of the proposed current mirror, a voltage-to-current converter using the current mirror is designed. Simulation results show that the converter has good agreement with theoretical equation and has three times better conversion characteristics when compared with voltage-to-current converter using Wilson current mirror.

A 10-bit 40-MS/s Low-Power CMOS Pipelined A/D Converter Design (10-bit 40-MS/s 저전력 CMOS 파이프라인 A/D 변환기 설계)

  • Lee, Sea-Young;Yu, Sang-Dae
    • Journal of Sensor Science and Technology
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    • v.6 no.2
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    • pp.137-144
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    • 1997
  • In this paper, the design of a 10-bit 40-MS/s pipelined A/D converter is implemented to achieve low static power dissipation of 70 mW at the ${\pm}2.5\;V$ or +5 V power supply environment for high speed applications. A 1.5 b/stage pipeline architecture in the proposed ADC is used to allow large correction range for comparator offset and perform the fast interstage signal processing. According to necessity of high-performance op amps for design of the ADC, the new op amp with gain boosting based on a typical folded-cascode architecture is designed by using SAPICE that is an automatic design tool of op amps based on circuit simulation. A dynamic comparator with a capacitive reference voltage divider that consumes nearly no static power for this low power ADC was adopted. The ADC implemented using a $1.0{\mu}m$ n-well CMOS technology exhibits a DNL of ${\pm}0.6$ LSB, INL of +1/-0.75 LSB and SNDR of 56.3 dB for 9.97 MHz input while sampling at 40 MHz.

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Design of Broadband Hybrid Mixer using Dual-Gate FET (이중게이트 FET를 이용한 광대역 하이브리드 믹서 설계)

  • Jin, Zhe-Jun;Lee, Kang-Ho;Koo, Kyung-Heon
    • Journal of Advanced Navigation Technology
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    • v.9 no.2
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    • pp.103-109
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    • 2005
  • This paper presents the design of a broadband hybrid mixer using dual-gate FET topology with a low-pass filter which improves return loss of output to isolate RF and LO signal. The low-pass filter shows the isolation with RF and LO signal of better than 40 dBc from 1.5 GHz to 5.5 GHz. The dual-gate mixer which has been designed by using cascade topology operates when the lower FET is biased in linear region and the upper FET is in saturation region. The input matching circuit has been designed to have conversion gain from 1.5 GHz to 5.5 GHz. The designed mixer with low-pass filter shows the conversion gain of better than 7 dB from 1.5 GHz to 5.5 GHz at the low LO power level of 0 dBm with the fixed IF frequency of 21.4 MHz.

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