• Membrane Journal
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• v.34 no.2
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• pp.87-95
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• 2024

Recent studies explore a wide array of desalination and water treatment methods, encompassing membrane processes such as reverse osmosis (RO), nanofiltration (NF), and electrodialysis (ED) to advanced capacitive deionization (CDI) and its membrane variant (MCDI). Comparative analyses reveal ED's cost-effectiveness in low-salinity scenarios, while hybrid systems (NF-MCDI, RO-NF-MCDI) show improved salt removal and energy efficiency. Novel ion separation methods (NF-CDI, NF-FCDI) offer enhanced efficacy and energy savings. These studies also highlight the efficiency of these methods in treating complex wastewater specific to various industries. Environmental impact assessments emphasize the need for sustainability in system selection. Additionally, the integration of microfabricated sensors into membranes allows real-time monitoring, advancing technology development. These studies underscore the variety and promise of emerging desalination and water treatment technologies. They provide valuable insights for enhancing efficiency, minimizing energy usage, tackling industry-specific issues, and innovating to surpass conventional method limitations. The future of sustainable water treatment appears bright, with continual advancements focused on improving efficiency, minimizing environmental impact, and ensuring adaptability across diverse applications.

• Journal of the Korean Association of Geographic Information Studies
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• v.27 no.1
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• pp.29-40
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• 2024

Recently, the technology of autonomous driving, one of the core of the fourth industrial revolution, is developing, but sensor-based autonomous driving is showing limitations, such as accidents in unexpected situations, To compensate for this, HD-map is being used as a core infrastructure for autonomous driving, and interest in the public and private sectors is increasing, and various studies and technology developments are being conducted to secure the latest and accuracy of HD-map. Currently, NGII will be newly built in urban areas and major roads across the country, including the metropolitan area, where self-driving cars are expected to run, and is working to minimize data error rates through quality verification. Therefore, this study analyzes the spatial relationship of reference objects in the attribute structuring process for rapid and accurate renewal and production of HD-map under construction by NGII, By applying the attribute input automation methodology of the reference object in which spatial relations are established using the library of open source-based PyQGIS, target sites were selected for each road type, such as high-speed national highways, general national highways, and C-ITS demonstration sections. Using the attribute automation tool developed in this study, it took about 2 to 5 minutes for each target location to automatically input the attributes of the spatial relationship reference object, As a result of automation of attribute input for reference objects, attribute input accuracy of 86.4% for high-speed national highways, 79.7% for general national highways, 82.4% for C-ITS, and 82.8% on average were secured.

• Journal of the Korea Organic Resources Recycling Association
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• v.17 no.4
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• pp.112-121
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• 2009

To obtain basic design criteria for underground anaerobic digestion and enhance biogas production from swine slurry, a $20m^3$ underground anaerobic digester (UGAD) was constructed and operated at mesophilic ($31{\sim}37^{\circ}C$) temperature with an organic loading rate (OLR) at $23.6kgVS/m^3/day$. The average biogas and $CH_4$ production rate were observed at 8.62 and $5.78m^3/day$, respectively. The mean percentile of $CH_4$ and $CO_2$ were also observed at 67.5% and 19.6%. The relative biogas yield was explored at $733L/kg\;VS_{added}$ and $CH_4$ yield was at $495L/kg\;VS_{added}$ respectively. The removal rate of biochemical constituents and pathogens were noticed considerably at 68%, 74%, 79%, 86%, 89%, 81%, 55%, 79%, 98% and 100% on TS, VS, TSS, $BOD_5$, $TCOD_{cr}$, $SCOD_{cr}$, $NH_3-N$, available P, fecal coliforms and Salmonella, respectively. This study suggested that, the modified UGAD system is a greatly desirable for anaerobic digestion for swine slurry with regards to high methane yield and biodegradability.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.3
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• pp.60-68
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• 2009

This work proposes a 10b 200MS/s 65nm CMOS ADC for high-definition video systems such as HDTV requiring high resolution and fast operating speed simultaneously. The proposed ADC employs a four-step pipeline architecture to minimize power consumption and chip area. The input SHA based on four capacitors reduces the output signal range from $1.4V_{p-p}$ to $1.0V_{p-p}$ considering high input signal levels at a low supply voltage of 1.2V. The proposed three-stage amplifiers in the input SHA and MDAC1 overcome the low output resistance problem as commonly observed in a 65nm CMOS process. The proposed multipath frequency-compensation technique enables the conventional RNMC based three-stage amplifiers to achieve a stable operation at a high sampling rate of 200MS/s. The conventional switched-bias power-reduction technique in the sub-ranging flash ADCs further reduces power consumption while the reference generator integrated on chip with optional off-chip reference voltages allows versatile system a locations. The prototype ADC in a 65nm CMOS technology demonstrates a measured DNL and INL within 0.19LSB and 0.61LSB, respectively. The ADC shows a maximum SNDR of 54.BdB and 52.4dB and a maximum SFDR of 72.9dB and 64.8dB at 150MS/S and 200MS/s, respectively. The proposed ADC occupies an active die area of $0.76mm^2$ and consumes 75.6mW at a 1.2V supply voltage.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.3
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• pp.33-38
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• 2021

Recently, rollable and foldable displays are attracting great attention in the flexible display market due to their excellent form factor. To predict and prevent the mechanical failure of the display panels, it is essential to accurately understand the mechanical properties of brittle SiN_x thin films, which have been used as an insulating film in flexible displays. In this study, tensile properties of the ~130 nm- and ~320 nm-thick SiN_x thin films were successfully measured by coating a ~190 nm-thick organic nano-support-layer (PMMA, PS, P3HT) on the fragile SiN_x thin films and stretching the films as a bilayer state. Young's modulus values of the ~130 nm and ~320 nm SiN_x thin films fabricated through the controlled chamber pressure and deposition power (A: 1250 mTorr, 450 W/B: 1000 mTorr, 600 W/C: 750 mTorr, 700 W) were calculated as A: 76.6±3.5, B: 85.8±4.6, C: 117.4±6.5 GPa and A: 100.1±12.9, B: 117.9±9.7, C: 159.6 GPa, respectively. As a result, Young's modulus of ~320 nm SiN_x thin films fabricated through the same deposition condition increased compared to the ~130 nm SiN_x thin films. The tensile testing method using the organic nano-support-layer was effective in the precise measurement of the mechanical properties of the brittle thin films. The method developed in this study can contribute to the robust design of the rollable and foldable displays by enabling quantitative measurement of mechanical properties of fragile thin films for flexible displays.

• Journal of the Korean Vacuum Society
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• v.17 no.1
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• pp.16-22
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• 2008

We studied plasma etching of polycarbonate in $O_2/SF_6$, $O_2/N_2$ and $O_2/CH_4$. A capacitively coupled plasma system was employed for the research. For patterning, we used a photolithography method with UV exposure after coating a photoresist on the polycarbonate. Main variables in the experiment were the mixing ratio of $O_2$ and other gases, and RF chuck power. Especially, we used only a mechanical pump for in order to operate the system. The chamber pressure was fixed at 100 mTorr. All of surface profilometry, atomic force microscopy and scanning electron microscopy were used for characterization of the etched polycarbonate samples. According to the results, $O_2/SF_6$ plasmas gave the higher etch rate of the polycarbonate than pure $O_2$ and $SF_6$ plasmas. For example, with maintaining 100W RF chuck power and 100 mTorr chamber pressure, 20 sccm $O_2$ plasma provided about $0.4{\mu}m$/min of polycarbonate etch rate and 20 sccm $SF_6$ produced only $0.2{\mu}m$/min. However, the mixed plasma of 60 % $O_2$ and 40 % $SF_6$ gas flow rate generated about $0.56{\mu}m$ with even low -DC bias induced compared to that of $O_2$. More addition of $SF_6$ to the mixture reduced etch of polycarbonate. The surface roughness of etched polycarbonate was roughed about 3 times worse measured by atomic force microscopy. However examination with scanning electron microscopy indicated that the surface was comparable to that of photoresist. Increase of RF chuck power raised -DC bias on the chuck and etch rate of polycarbonate almost linearly. The etch selectivity of polycarbonate to photoresist was about 1:1. The meaning of these results was that the simple capacitively coupled plasma system can be used to make a microstructure on polymer with $O_2/SF_6$ plasmas. This result can be applied to plasma processing of other polymers.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.2 s.31
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• pp.59-66
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• 2004

This paper presents a novel fabrication process for a tapered hollow metallic microneedle array using backside exposure of SU-8, and analytic solutions of critical buckling of a tapered hollow microneedle. An SU-8 meta was formed on a Pyrex glass substrate and another SU-8 layer, which was spun on top of the SU-8 mesa, was exposed through the backside of the glass substrate. An array of SU-8 tapered pillar structures. with angles in the range of $3.1^{\circ}{\sim}5^{\circ}$ was formed on top of the SU-8 mesa. Conformal electrodeposition of metal was carried out followed by a mechanical polishing using a pianarizing polymeric layer. All organic layers were then removed to create a metallic hollow microneedle array with a fluidic reservoir on the backside. Both $200{\mu}m\;and\;400{\mu}m$ tall, 10 by 10 arrays of metallic microneedles with inner diameters of the tip in the range of $33.6{\sim}101\;{\mu}m$ and wall thickness of $10{\mu}m\;-\;20{\mu}m$ were fabricated. Analytic solutions of the critical buckling of arbitrary-angled truncated cone-shaped columns are also presented. It was found that a single $400{\mu}m$ tall hollow cylindrical microneedle made of electroplated nickel with a wall thickness of $20{\mu}m$, a tapered angle of $3.08^{\circ}$ and a tip inner diameter of $33.6{\mu}m$ has a critical buckling force of 1.8 N. This analytic solution can be used for square or rectangular cross-sectioned column structures with proper modifications.

• KSBB Journal
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• v.24 no.1
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• pp.1-8
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• 2009

In the past decade, we have observed rapid advances in the development of biochips in many fields including medical and environmental monitoring. Biochip experiments involve immobilizing a ligand on a solid substrate surface, and monitoring its interaction with an analyte in a sample solution. Metal nanoparticles can display extinction bands on their surfaces. These charge density oscillations are simply known as the localized surface plasmon resonance (LSPR). The high sensitivity of LSPR has been utilized to design biochips for the label-free detection of biomolecular interactions with various ligands. LSPR-based optical biochips and biosensors are easy to fabricate, and the apparatus cost for the evaluation of optical characteristics is lower than that for the conventional surface plasmon resonance apparatus. Furthermore, the operation procedure has become more convenient as it does not require labeling procedure. In this paper, we review the recent advances in LSPR research and also describe the LSPR-based optical biosensor constructed with a core-shell dielectric nanoparticle biochip for its application to label-free biomolecular detections such as antigen-antibody interaction.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.2
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• pp.96-113
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• 1996

It has been found that the misfit dislocations in heavily boron-doped layers originate from wafer edges. Moreover, the propagation of the misfit dislocation into a heavily boron-doped region can be suppressed by placing a surrounding undoped region. Using a surrounding undoped region the disloction-free heavily boron-deoped silicon membranes have been fabricated. The measured surface roughness, fracture strength, and residual tensile stress of the membrane are 20.angs. peak-to-peak, 1.39${\times}$10$^{10}$ and 2.7${\times}$10$^{9}$dyn/cm$^{2}$, while those of the conventional heavily boron-doped silicon membrane with high density of misfit dislocations are 500 peak-to-peak, 8.27${\times}$10$^{9}$ and 9.3${\times}$10$^{8}$dyn/cm$^{2}$ respectively. The differences between these two membranes are due to the misfit dislocations. Young's modulus has been extracted as 1.45${\times}$10$^{12}$dyn/cm$^{2}$ for both membranes. Also, the effective lattice constant of heavily boron-doped silicon, the in-plane lattice constant of the conventional membrane, and the density of misfit dislocation contained in the conventional membrane have been extracted as density of misfit dislocation contained in the conventional membrane have been extracted as density of misfit dislocation contained in the conventional membrane have been extracted as 5.424.angs. 5.426.angs. and 2.3${\times}$10$^{4}$/cm for the average boron concentration of 1.3${\times}$10$^{20}$/cm$^{-23}$ cm$^{3}$/atom. Without any buffer layers, a disloction-free lightly boron-doped epitaxial layer with good crsytalline quality has been directly grown on the dislocation-free heavily boron-doped silicon layer. X-ray diffraction analysis revealed that the epitaxial silicon has good crystallinity, similar to that grown on lightly doped silicon substrate. The leakage current of the n+/p gated diode fabricated in the epitaxial silicon has been measured to be 0.6nA/cm$^{2}$ at the reverse bias of 5V.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.11 s.353
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• pp.37-47
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• 2006

This work proposes a 10b 25MS/s $0.8mm^2$ 4.8mW 0.13um CMOS A/D Converter (ADC) for high-performance wireless communication systems such as DVB, DAB and DMB simultaneously requiring low voltage, low power, and small area. A two-stage pipeline architecture minimizes the overall chip area and power dissipation of the proposed ADC at the target resolution and sampling rate while switched-bias power reduction techniques reduce the power consumption of analog amplifiers. A low-power sample-and-hold amplifier maintains 10b resolution for input frequencies up to 60MHz based on a single-stage amplifier and nominal CMOS sampling switches using low threshold-voltage transistors. A signal insensitive 3-D fully symmetric layout reduces the capacitor and device mismatch of a multiplying D/A converter while low-noise reference currents and voltages are implemented on chip with optional off-chip voltage references. The employed down-sampling clock signal selects the sampling rate of 25MS/s or 10MS/s with a reduced power depending on applications. The prototype ADC in a 0.13um 1P8M CMOS technology demonstrates the measured DNL and INL within 0.42LSB and 0.91LSB and shows a maximum SNDR and SFDR of 56dB and 65dB at all sampling frequencies up to 2SMS/s, respectively. The ADC with an active die area if $0.8mm^2$ consumes 4.8mW at 25MS/s and 2.4mW at 10MS/s at a 1.2V supply.