• The Journal of the Korea institute of electronic communication sciences
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• v.6 no.1
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• pp.118-122
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• 2011

For programming such as writing or erasing of the flash memory, two different kinds of high voltage are required, and the charge pump circuit has been used for this. The charge pump circuit proposed in this paper uses the VCO to adjust the clock frequency in order to match the reference voltage approved from the outside and the charge pump's output. Accordingly, I suggest a circuit that can produce a predictable output, regardless of not only an error by fabrication but also MOSFET's body effect generated in each part of the charge pump.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.7
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• pp.449-453
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• 2016

The amount of electrical energy has been increased with the rapid development of the industrial society. Accordingly, operating voltage of the power equipment and facility capacity are continuously increasing. Development trends of recent high-voltage electrical equipment are ultra high-voltage, large-capacity and compact. Early diagnosis of a failure of the power plant has been emerging as an important task as to supply high quality power to users. In this study, we have tried to develope an algorithm for distinguishing an arc fault signal generated in the power plant by using UV sensor.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.12
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• pp.1041-1047
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• 2001

In this paper, reduction characteristics of the ac flashover voltage in the horizontal air gap of sphere-sphere/needle-needle electrode system were investigated when the combustion flame was present near the high-voltage electrodes. The voltage and current waveforms were measured, when the flashover is occurred, in order to examine the flashover polarity by flame. The reduction characteristics of ac flashover voltage were discussed with the thermal ionization process, the relative air density and the deflection phenomena in the shape of flames that changed by the corona wind and coulomb\`s force. As the results of an experimental investigation, It was found that the reduction of flashover voltages in sphere-sphere system, in comparison with the no-flame case, are 79.9 [%] for k=0, 82.9 [%] for k=0.5, 87.5 [%] for k=1.0, 85.0 [%] for h=0 [cm], 40.8 [%] for h=5 [cm] and 28.2 [%] for h=9 [cm] when ac voltage is applied.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.777-778
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• 2006

In this thesis, we design and implement a Flash Cache Core Module (FCCM) which operates on the YAFFS NAND flash memory. The FCCM applies memory replacement policy and prefetching policy based on the page reference pattern of applications. Also, implement the Clean-First memory replacement technique considering the characteristics of flash memory. In this method the decision is made according to page hit to apply prefetched waiting area. The FCCM decrease I/O hit frequency up to 37%, Compared with the linux cache and prefetching policy. Also, it operated using less memory for prefetching(maximum 24% and average 16%) compared with the linux kernel.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.1
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• pp.7-11
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• 2009

In this study, p-channel silicon-oxide-nitride-oxide-silicon(SONOS) transistors are fabricated and characterized as an unit cell for NAND flash memory. The SONOS transistors are fabricated by $0.13{\mu}m$ low power standard logic process technology. The thicknesses of gate insulators are 2.0 nm for the tunnel oxide, 1.4 nm for the nitride layer, and 4.9 nm for the blocking oxide. The fabricated SONOS transistors show low programming voltage and fast erase speed. However, the retention and endurance of the devices show poor characteristics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.5
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• pp.372-377
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• 2003

To realize a high integrated flash memory utilizing SONOS memory devices, the NOR type ITC(one Transistor Cell) SONOS flash arrays are fabricated and characterized. This SONOS flash arrays with the common source lines are designed and fabricated by conventional 0.35$\mu\textrm{m}$ CMOS process. The thickness of ONO for memory cells is tunnel oxide of 34${\AA}$, nitride of 73${\AA}$ and blocking oxide of 34${\AA}$ . To investigate operating characteristics, CHEI(Channel Hot Electron Injection) method and bit line method are selected as the program and 4he erase operation, respectively. The disturbance characteristics ,according to the program/erase/read cycling are also examined. The degradation characteristics are investigated and then the reliability of SONOS flash memory is guaranteed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.26-27
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• 2006

To develop tera-bit level SONOS flash memories, SONOS unit memory and 64 bit flash arrays are fabricated. The unit cells have both channel length and width of 30nm. The NAND & NOR arrays are fabricated on SOI wafer and patterned by E-beam. The unit cells represent good write/erase characteristics and reliability characteristics. SSL-NOR array have normal write/erase operation. These researches are leading the realization of Tera-bit level non-volatile nano flash memory.

• Proceedings of the Korea Information Processing Society Conference
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• 2012.04a
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• pp.378-381
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• 2012

최근 들어, 정보 광고 디스플레이 (Digital Signage)는 영상 재현 및 IT 기술 발전으로 비약적 성장을 거듭하고 있다. 기업들의 마케팅이나 광고, 트레이닝 효과 및 고객 경험을 유도할 수 있는 커뮤니케이션 도구로써 공항이나 호텔, 병원 등 공공 장소에서 방송 프로그램뿐 아니라 특정한 정보를 함께 제공하는 디지털 영상 장치로써 다양하게 사용되고 있다. 현재는 기존 상업용 디지털 정보 디스플레이(DID)에 주요 기능을 제어할 수 있는 소프트웨어나 관리 플랫폼까지 종합적으로 공급하는 형태로 시장에 공급되고 있다. 현재 거의 대부분의 프로그램은 플래시를 이용하여 정보를 일방적으로 전달하는 모습을 하고 있어 사용자의 요구나 다양한 정보의 표현에 제약이 많았다. 본 논문에서는 사용자와의 쌍방향 통신을 유도를 통하여 광고의 예술성뿐 아니라 정보제공의 기능까지도 동시에 만족시킬 수 있는 은닉형 광고 디스플레이 제품 정보 표현 기법을 제안한다. 구체적으로 예로써 Histogram shifting 을 이용한 QR 코드 은닉을 통해 영상에서 사용자가 원하는 제품에 대한 QR 코드를 숨기고 표출하는 방법을 보인다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.3
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• pp.246-254
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• 2022

Localized heat can be generated using electrically conductive word-lines built into a 3D NAND flash memory string. The heat anneals the gate dielectric layer and improves the endurance and retention characteristics of memory cells. However, even though the electro-thermal annealing can improve the memory operation, studies to investigate material failures resulting from electro-thermal stress have not been reported yet. In this context, this paper investigated how applying electro-thermal annealing of 3D NAND affected mechanical stability. Hot-spots, which are expected to be mechanically damaged during the electro-thermal annealing, can be determined based on understanding material characteristics such as thermal expansion, thermal conductivity, and electrical conductivity. Finally, several guidelines for improving mechanical stability are provided in terms of bias configuration as well as alternative materials.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.9 no.4
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• pp.13-21
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• 2010

Most of traffic management systems include the map-based traffic information services using World Wide Web. Geographic Information System is an efficient tool to build a map-based system. However, many traffic information service systems have own independent maps for graphic/animation softwares such as Adobe Flash. These systems make it difficult to manage modifications of maps. In this paper, we suggest a new GIS-based traffic information service system without these problems. The proposed system makes the efficient use of GIS map data for traffic information service because a map display engine is separated from map data that is transferred after real-time conversion.