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http://dx.doi.org/10.4313/JKEM.2003.16.5.372

A Study on the High Integrated 1TC SONOS flash Memory  

김주연 (울산과학대학 전기전자통신학부)
김병철 (진주산업대학교 전자공학과)
서광열 (광운대학교 반도체 및 신소재공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.16, no.5, 2003 , pp. 372-377 More about this Journal
Abstract
To realize a high integrated flash memory utilizing SONOS memory devices, the NOR type ITC(one Transistor Cell) SONOS flash arrays are fabricated and characterized. This SONOS flash arrays with the common source lines are designed and fabricated by conventional 0.35$\mu\textrm{m}$ CMOS process. The thickness of ONO for memory cells is tunnel oxide of 34${\AA}$, nitride of 73${\AA}$ and blocking oxide of 34${\AA}$ . To investigate operating characteristics, CHEI(Channel Hot Electron Injection) method and bit line method are selected as the program and 4he erase operation, respectively. The disturbance characteristics ,according to the program/erase/read cycling are also examined. The degradation characteristics are investigated and then the reliability of SONOS flash memory is guaranteed.
Keywords
SONOS flash memory; NOR type; CHEI; Disturbance; Common Source line;
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Times Cited By KSCI : 2  (Citation Analysis)
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