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http://dx.doi.org/10.4313/JKEM.2009.22.1.007

The Characteristics of p-channel SONOS Transistor for the NAND Charge-trap Flash Memory  

Kim, Byung-Cheul (진주산업대학교 전자공학과)
Kim, Joo-Yeon (울산과학대학 반도체응용)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.22, no.1, 2009 , pp. 7-11 More about this Journal
Abstract
In this study, p-channel silicon-oxide-nitride-oxide-silicon(SONOS) transistors are fabricated and characterized as an unit cell for NAND flash memory. The SONOS transistors are fabricated by $0.13{\mu}m$ low power standard logic process technology. The thicknesses of gate insulators are 2.0 nm for the tunnel oxide, 1.4 nm for the nitride layer, and 4.9 nm for the blocking oxide. The fabricated SONOS transistors show low programming voltage and fast erase speed. However, the retention and endurance of the devices show poor characteristics.
Keywords
p-channel SONOS; NAND flash memory; Charge-trap flash; Low programming voltage; Fast erase speed;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
연도 인용수 순위
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