1 |
C. M. Compagnoni, A. Goda, A. S. Spinelli, P. Feeley, A. L. Lacaita, and A. Visconti, Proc. IEEE, 105, 1609 (2017). [DOI: https://doi.org/10.1109/JPROC.2017.2665781]
DOI
|
2 |
H. Aochi, Proc. 2009 IEEE International Memory Workshop (IEEE, Monterey, USA, 2009) p. 1. [DOI: https://doi.org/10.1109/imw.2009.5090581]
DOI
|
3 |
T. H. Hsu, H. T. Lue, P. Y. Du, W. C. Chen, T. H. Yeh, R. Lo, H. S. Chang, K. C. Wang, and C. Y. Lu, Proc. 2019 IEEE 11th International Memory Workshop (IMW) (IEEE, Monterey, USA, 2019) p. 2330. [DOI: https://doi.org/10.1109/IMW.2019.8739692]
DOI
|
4 |
K. S. Lee and J. Y. Park, Electronics, 10, 1395 (2021). [DOI: https://doi.org/10.3390/electronics10121395]
DOI
|
5 |
H. T. Lue, P. Y. Du, C. P. Chen, W. C. Chen, C. C. Hsieh, Y. H. Hsiao, Y. H. Shih, and C. Y. Lu, Proc. 2012 International Electron Devices Meeting (IEEE, San Francisco, USA, 2012) pp. 9.1.1-9.1.4 [DOI: https://doi.org/10.1109/IEDM.2012.6479008]
DOI
|
6 |
J. Y. Park, D. I. Moon, M. L. Seol, C. K. Kim, C. H. Jeon, H. Bae, T. Bang, and Y. K. Choi, IEEE Trans. Electron Devices, 63, 910 (2016). [DOI: https://doi.org/10.1109/TED.2015.2513744]
DOI
|
7 |
J. W. Han, R. Peterson, D. I. Moon, D. G. Senesky, and M. Meyyappan, IEEE Electron Device Lett., 38, 831 (2017). [DOI: https://doi.org/10.1109/LED.2017.2700326]
DOI
|