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http://dx.doi.org/10.4313/JKEM.2022.35.3.6

Study on Improving the Mechanical Stability of 3D NAND Flash Memory String During Electro-Thermal Annealing  

Kim, Yu-Jin (School of Electronics Engineering, Chungbuk National University)
Park, Jun-Young (School of Electronics Engineering, Chungbuk National University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.35, no.3, 2022 , pp. 246-254 More about this Journal
Abstract
Localized heat can be generated using electrically conductive word-lines built into a 3D NAND flash memory string. The heat anneals the gate dielectric layer and improves the endurance and retention characteristics of memory cells. However, even though the electro-thermal annealing can improve the memory operation, studies to investigate material failures resulting from electro-thermal stress have not been reported yet. In this context, this paper investigated how applying electro-thermal annealing of 3D NAND affected mechanical stability. Hot-spots, which are expected to be mechanically damaged during the electro-thermal annealing, can be determined based on understanding material characteristics such as thermal expansion, thermal conductivity, and electrical conductivity. Finally, several guidelines for improving mechanical stability are provided in terms of bias configuration as well as alternative materials.
Keywords
3D NAND; Mechanical stress; Reliability; Simulation; Electro-thermal annealing;
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