• Journal of the Korean Society of Propulsion Engineers
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• v.20 no.5
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• pp.51-59
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• 2016

STS 321 stainless steel is generally used for a material of high-temperature and high-pressure system including liquid rocket engine. The constitutive equation for flow stress has been suggested using thermal stress component and athermal stress component based on Kocks dislocation barrier model to predict 321 stainless steel's deformation behavior at elevated temperature. The suggested model predicted well the material deformation behaviors of 321 stainless steel at the wide temperature range from room temperature to $500^{\circ}C$.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.9
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• pp.2000-2006
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• 2011

In this paper, the drain induced barrier lowering(DIBL) for doping distribution in the channel has been analyzed for double gate MOSFET(DGMOSFET). The DGMOSFET is extensively been studing because of adventages to be able to reduce the short channel effects(SCEs) to occur in convensional MOSFET. DIBL is SCE known as reduction of threshold voltage due to variation of energy band by high drain voltage. This DIBL has been analyzed for structural parameter and variation of channel doping profile for DGMOSFET. For this object, The analytical model of Poisson equation has been derived from Gaussian doping distribution for DGMOSFET. To verify potential and DIBL models based on this analytical Poisson's equation, the results have been compared with those of the numerical Poisson's equation, and DIBL for DGMOSFET has been investigated using this models.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1262-1264
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• 1995

The question-"How fast a electron tunnels a potential barrier?" looks like simple, but is controversy for more than 40 years. Because "tunneling" involves complicated internal processes and its definition is ambiguous. Recent experiments showed that the phase time is the best model of tunneling time among other times-for example, dwell time, Larmor clock time etc. In this paper, we simulated the tunneling time for Gaussian wave packet by program InterQuanta and compared with the phase time. In particular we focused on the effect of wave packet spreading in momentum space(or real space) which is not expressed by the phase time formula.

• Proceedings of the Speleological Society Conference
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• 2005.11a
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• pp.69-77
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• 2005

비 직선적 정(+) 저항온도계수 특성을 갖은 PTC thermistor눈 전이온도(큐리점) 부근에서 온도변화에 대하여 극히 큰 저항 값의 변화를 나타내는 산화물계반도체 저항기(또는 발열체)로써, 일반적으로 반도체의 온도-저항 특성과 같이 상온영역에서 온도의 상승과 함께 부성저항 특성을 나타내어 감소하다가, 온도가 점점 증가하여 큐리점 부근에 도달하면 저항이 급격히 증가하는 독특한 특성을 갖는다. Perovskite 구조의 BaTiO$_3$를 주성분으로 미량의 Dopant를 첨가하여 도전성을 갖게 한 N형 반도체의 일종으로, 저항-온도 특성, 전류-전압 특성, 전류감쇄 특성 등을 이용하여 과전류 보호회로, 히터, TV 소자회로(degausser) 모터기동회로, 온도센서, 정온발열기기 등으로 널리 사용된다. 본 연구는 큐리점 부근의 급격한 저항변화 현상과 결정입계의 전위장벽 형성 및 그에 따른 정온발열 기능의 상관성으로부터 정온발열 탐사기능 온열부츠 제작 용 PTC 부픔소재의 응용성을 조사하였다.

• Journal of the Korean Ceramic Society
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• v.38 no.4
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• pp.380-387
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• 2001

140$0^{\circ}C$ 환원 분위기(질소-수소) 조건에서 열처리하여 반도성 SrTiO$_3$하소분말을 제조하였다. 하소분말을 이용하여 135$0^{\circ}C$에서 2시간동안 상압 소결하여 소결체를 제조하였으며, 이때 소결 분위기에 따른 소결체 입계의 전기적 특성을 고찰하였다. 이들 소결체는 전형적인 바리스터 특성을 나타내었으며, 특히 소결 분위기를 질소-수소로부터 공기로 변화시킴에 따라서 소결체의 문턱 전압, 입계 비저항 그리고 입계 전위 장벽은 430V/cm, 10MΩ.cm 그리고 2.0$\times$$10^{-3}$eV로부터 1000V/cm 이상, 240 MΩ.m 그리고 1.1eV로 변하였다.

• Journal of the Korean Ceramic Society
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• v.37 no.12
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• pp.1150-1158
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• 2000

반도성 SrTiO$_3$분말을 이용하여 상압에서 제조된 소결체의 소결 분위기에 따른 소결체 입계의 결함 화학 및 전기적 특성을 고찰하였다. 소결 분위기를 질소-수소, 질소, 공기로 변화시킴에 따라서 입계에서 O/(Sr+Ti)의 비는 1.6로부터 2.1로 증가하였으며, 또한 입계의 과잉 음전하층에서 전하 밀도는 1C/$ extrm{cm}^2$로부터 1.26C/$\textrm{cm}^2$로 증가하였다. 소결체의 문턱 전압, 입계 저항 그리고 입계 전위 장벽은 소결 분위기를 질소-수소로부터 공기로 변화시킴에 따라 6.40-1000 V/cm, 2.70-3050 kΩ 그리고 0.08-10.9 eV로 각각 증가하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.9
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• pp.793-799
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• 2006

In this paper, the gate leakage current is first calculated using the experimental method between gate and drain by opening source electrode. the gate to drain current has been obtained with ground source. The difference between two currents has been tested and proves that the electric field generated by channel charge effect against the image force lowering.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.45 no.1
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• pp.159-163
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• 1996

Simulated electron tunneling time through a potential barrier is compared with theoretical phase time. For a GaAs/Al/sub 0.3/Ga/sub 0.7/As/GaAs potential barrier with 300 meV height and 3 nm or 5 nm width, simulations are performed with various average electron energies and momentum deviations. The simulation results become closer to the theoretical phase time as the average electron energy decreases and as the momentum deviation decreases. It is also shown that a barrier, which is due to the peak spectrum shift in the momentum space after tunneling. (author). refs., figs.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.20 no.6
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• pp.14-18
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• 2019

The conductivity of a semiconductor is primarily determined by the carriers. To achieve higher conductivity, the number of carriers should be high, and an energy trap level is created so that the carriers can cross the forbidden zone with low energy. Carriers have a crystalline binding structure, and interfacial mismatching tends to make them less conductive. In general, high-concentration doping is typically used to increase mobility. However, higher conductivity is also observed in non-orthogonal conjugation structures. In this study, the phenomena of higher conductivity and higher mobility were observed with space charge limiting current due to tunneling phenomena, which are different from trapping phenomena. In an atypical structure, the number of carriers is low, the resistance is high, and the on/off characteristics of capacitances are improved, thus increasing the mobility. ZTO thin film improved the on/off characteristics of capacitances after heat treating at $150^{\circ}C$. In charging and discharging tests, there was a time difference in the charge and discharging shapes, there was no distinction between n and p type, and the bonding structure was amorphous, such as in the depletion layer. The amorphous bonding structure can be seen as a potential barrier, which is also a source of space charge limiting current and causes conduction as a result of tunneling. Thus, increased mobility was observed in the non-structured configuration, and the conductivity increased despite the reduction of carriers.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.3
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• pp.331-336
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• 2013

In this paper, plasma modeling is achieved using fluid dynamics, thereby electron density is derived. The way proposes the key to overcoming the limitations of conventional researches which adopt simplified plasma model. The result is coupled with Maxwell-Boltzmann system in order to calculate scattering waves in various incident angle. The first part is dedicated to perform plasma modeling in dielectric barrier discharge(DBD) structure. Suzen-Huang model is adopted among various models due to the fact that it uses time independent variables to calculated potential and electron distribution in static system. The second part deals with finite difference time domain(FDTD) scheme which computes the scattered waves when the modulated Gaussian pulse is incident. Founded on it, radar cross section(RCS) is observed. Consequently, RCS is decreased by 1~2 dB with DBD plasma. The result is analogous to the RCS measurement in other researches.