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http://dx.doi.org/10.4313/JKEM.2006.19.9.793

Potential Barrier Shift Caused by Channel Charge in Short Channel GaAs MESFET  

Sub, Won-Chang (건국대학교 전기공학과)
Lee, Myung-Soo (산업자원부 기술표준원)
Ryu, Se-Hwan (건국대학교 전기공학과)
Han, Deuk-Young (건국대학교 전기공학과)
Ahn, Hyung-Keun (건국대학교 전기공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.19, no.9, 2006 , pp. 793-799 More about this Journal
Abstract
In this paper, the gate leakage current is first calculated using the experimental method between gate and drain by opening source electrode. the gate to drain current has been obtained with ground source. The difference between two currents has been tested and proves that the electric field generated by channel charge effect against the image force lowering.
Keywords
MESFET; Short channel; Schottky effect; Thermal effect;
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