• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.3
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• pp.189-194
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• 2014

In this paper, PV modules using a low-temperature conductive film(LT-CF) as a bonding material between a cell and a solder free ribbon were produced and chracterized, which is more environmental-friendly, cost effective and high efficient. Mainly, filed electrical performance of PV modules using three different types of bonding material; a convetional solder ribbon(SR), a LT-CF and a light-capturing Ribbon(LCR) were compared to comfirm the feasibility of LT-CF as a bonding material. The filed test were conducted for 3 months and results were discussed in terms of amount of output energy production and efficiency.

• Journal of the Microelectronics and Packaging Society
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• v.16 no.3
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• pp.67-73
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• 2009

Compared to the chip-bonding process utilizing solder bumps, flip chip process using Cu pillar bumps can accomplish fine-pitch interconnection without compromising stand-off height. Cu pillar bump technology is one of the most promising chip-mounting process for RF packages where large gap between a chip and a substrate is required in order to suppress the parasitic capacitance. In this study, Cu pillar bumps and Sn bumps were electroplated on a chip and a substrate, respectively, and were flip-chip bonded together. Contact resistance and chip shear force of the Cu pillar bump joints were measured with variation of the electroplated Sn-bump height. With increasing the Sn-bump height from 5 ${\mu}m$ to 30 ${\mu}m$, the contact resistance was improved from 31.7 $m{\Omega}$ to 13.8 $m{\Omega}$ and the chip shear force increased from 3.8 N to 6.8 N. On the contrary, the aspect ratio of the Cu pillar bump joint decreased from 1.3 to 0.9. Based on the variation behaviors of the contact resistance, the chip shear force, and the aspect ratio, the optimum height of the electroplated Sn bump could be thought as 20 ${\mu}m$.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.4
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• pp.203-211
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• 2013

UHF RFID tag designers usually ndde the chip impedance and read power sensitivity value obtained when a tag chip is mounted on a chip pad. The chip impedance, however, is not able to be supplied by chip manufacturer, since the chip impedance is varied according to tag designs and fabrication processes. Instead, the chip makers mostly supply the chip impedances measured on the bare dies. This study proposes a chip impedance and read power sensitivity evaluation method which requires a few simple auxiliary and some RF measuring equipment. As it is impractical to measure the chip impedance directly at mounted chip terminals, some form test fixture is employed and the effect of the fixture is modeled and de-embeded to determine the chip impedance and the read power sensitivity. Validity and accuracy of the proposed de-embed method are examined by using commercial RFID tag chips as well as a capacitor and a resistor the value of which are known.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.2
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• pp.7-15
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• 2008

In this paper, the Chip-On-Flex (COF) assembly process using anisotropic conductive films (ACFs) was investigated and the reliability of COF assemblies using ACFs was evaluated. Thermo-mechanical properties of ACFs such as coefficient of thermal expansion (CTE), storage modulus (E'), and glass transition temperature $(T_g)$ were measured to investigate the effects of ACF material properties on the reliability of COF assemblies using ACFs. In addition, the bonding conditions for COF assemblies using ACFs such as time, temperature, and pressure were optimized. After the COF assemblies using ACFs were fabricated with optimized bonding conditions, reliability tests were then carried out. According to the reliability test results, COF assemblies using the ACF which had lower CTE and higher $T_g$ showed better thermal cycling reliability. Consequently, thermo-mechanical properties of ACFs, especially $T_g$, should be improved for high thermal cycling reliability of COF assemblies using ACFs for compact camera module (CCM) applications.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.11 s.353
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• pp.8-13
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• 2006

Recent RF SAW filters are made using a HTCC package with a CSP(chip scale Package) technology. This paper describes a development of a new $1.4{\times}1.1\;and\;2.0{\times}1.4mm$ RF SAW liters made by PCB substrate instead of HTCC package, and this technology can reduce the cost of materials down to 40%. We have investigated the multi-layered PCB substrate structures and raw materials to find out the optimal flip-bonding condition between the $LiTaO_3$ wafer and PCB substrates. Also the optimal materials and processing conditions of epoxy laminating film were found out through the experiments which can reduce the bending moment caused by the difference of the thermal expansion between the PCB substrate and laminating film. The new PCB SAW filter shows good electrical and reliability performances with respect to the present SAW filters.

• Korean Chemical Engineering Research
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• v.47 no.1
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• pp.1-10
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• 2009

As a demand for the portable device requiring smaller size and better performance is in hike, reducing the size of conventionally used planar 2 dimensional chip cannot be a solution for the enhancement of the semiconductor chip technology due to an increase in RC delay among interconnects. To address this problem, a new technology - "3 dimensional (3D) IC chip stack" - has been emerging. For the integration of the technology, several new key unit processes (e.g., silicon through via, wafer thinning and wafer alignment and bonding) should be developed and much effort is being made to achieve the goal. As a result of such efforts, 4 and 8 chip-stacked DRAM and NAND structures and a system stacking CPU and memory chips vertically were successfully developed. In this article, basic theory, configurations and key unit processes for the 3D IC chip integration, and a current tendency of the technology are explained. Future opportunities and directions are also discussed.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.4
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• pp.1-10
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• 2020

This paper reviews the recent development of electronic textile technology, mainly focusing on chip-textile bonding. Before the chip-textile bonding, a circuit on the textile should be prepared to supply the electrical power and signal to the chip mounted on the fabrics. Either embroidery with conductive yarn or screen-printing with the conductive paste can be applied to implement the circuit on the fabrics depending on the circuit density and resolution. Next, chip-textile bonding can be performed. There are two choices for chip-textile bonding: fixed connection methods such as soldering, ACF/NCA, embroidery, crimping, and secondly removable connection methods like a hook, magnet, zipper. Following the chip-textile bonding process, the chip on the textile is generally encapsulated using PDMS to ensure reliability like water-proof.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.2 s.35
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• pp.111-119
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• 2005

Stack specimen with three dimensional interconnection structure through Cu via of $75{\mu}m$ diameter, $90{\mu}m$ height and $150{\mu}m$ pitch was successfully fabricated using subsequent processes of via hole formation with Deep RIE (reactive ion etching), Cu via filling with pulse-reverse electroplating, Si thinning with CMP, photolithography, metal film sputtering, Cu/Sn bump formation, and flip chip bonding. Contact resistance of Cu/Sn bump and Cu via resistance could be determined ken the slope of the daisy chain resistance vs the number of bump joints of the flip chip specimen containing Cu via. When flip- chip bonded at $270^{\circ}C$ for 2 minutes, the contact resistance of the Cu/Sn bump joints of $100{\times}100{\mu}m$ size was 6.7m$\Omega$ and the Cu via resistance of $75{\mu}m$ diameter, $90{\mu}m$ height was 2.3m$\Omega$.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.12 no.7
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• pp.1235-1242
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• 2008

In this paper, x-ray image sensor of photon counting type having a $32{\times}32$ pixel array is designed with $0.18{\mu}m$ triple-well CMOS process. Each pixel of the designed image sensor has an area of loot $100{\times}100\;{\mu}m2$ and is composed of about 400 transistors. It has an open pad of an area of $50{\times}50{\mu}m2$ of CSA(charge Sensitive Amplifier) with x-ray detector through a bump bonding. To reduce layout size, self-biased folded cascode CMOS OP amp is used instead of folded cascode OP amp with voltage bias circuit at each single-pixel CSA, and 15-bit LFSR(Linear Feedback Shift Register) counter clock generator is proposed to remove short pulse which occurs from the clock before and after it enters the counting mode. And it is designed that sensor data can be read out of the sensor column by column using a column address decoder to reduce the maximum current of the CMOS x-ray image sensor in the readout mode.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.3
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• pp.503-510
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• 2006

Readout circuit is to convert signal occurred in a defector into suitable signal for image signal processing. In general, it has to possess functions of impedance matching with perception element, amplification, noise reduction and cell selection. It also should satisfies conditions of low-power, low-noise, linearity, uniformity, dynamic range, excellent frequency-response characteristic, and so on. The technical issues in developing image processing equipment for focal plane way (FPA) can be categorized as follow: First, ultraviolet (UV) my detector material and fine processing technology. Second, ReadOut IC (ROIC) design technology to process electric signal from detector. Last, package technology for hybrid bonding between detector and ROIC. ROIC enables intelligence and multi-function of image equipment. It is a core component for high value added commercialization ultimately. Especially, in development of high-resolution image equipment ROIC, it is necessary that high-integrated and low-power circuit design technology satisfied with design specifications such as detector characteristic, signal dynamic range, readout rate, noise characteristic, ceil pitch, power consumption and so on. In this paper, we implemented a $8\times8$ FPA prototype ROIC for reduction of period and cost. We tested unit block and overall functions of designed $8\times8$ FPA ROIC. Also, we manufactured ROIC control and image boards, and then were able to verify operation of ROIC by confirming detected image from PC's monitor through UART(Universal Asynchronous Receiver Transmitter) communication.