• Korean Journal of Materials Research
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• v.23 no.1
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• pp.47-52
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• 2013

Graphene has been synthesized on 100- and 300-nm-thick Ni/$SiO_2$/Si substrates with $CH_4$ gas (1 SCCM) diluted in mixed gases of 10% $H_2$ and 90% Ar (99 SCCM) at $900^{\circ}C$ by using inductively-coupled plasma chemical vapor deposition (ICP-CVD). The film morphology of 100-nm-thick Ni changed to islands on $SiO_2$/Si substrate after heat treatment at $900^{\circ}C$ for 2 min because of grain growth, whereas 300-nm-thick Ni still maintained a film morphology. Interestingly, suspended graphene was formed among Ni islands on 100-nm-thick Ni/$SiO_2$/Si substrate for the very short growth of 1 sec. In addition, the size of the graphene domains was much larger than that of Ni grains of 300-nm-thick Ni/$SiO_2$/Si substrate. These results suggest that graphene growth is strongly governed by the direct formation of graphene on the Ni surface due to reactive carbon radicals highly activated by ICP, rather than to well-known carbon precipitation from carbon-containing Ni. The D peak intensity of the Raman spectrum of graphene on 300-nm-thick Ni/$SiO_2$/Si was negligible, suggesting that high-quality graphene was formed. The 2D to G peak intensity ratio and the full-width at half maximum of the 2D peak were approximately 2.6 and $47cm^{-1}$, respectively. The several-layer graphene showed a low sheet resistance value of $718{\Omega}/sq$ and a high light transmittance of 87% at 550 nm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.4
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• pp.298-303
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• 2003

Bi$_4$-$_{x}$EU$_{x}$Ti$_3$O$_{12}$ (BET) thin films were etched by inductively coupled CF$_4$/Ar plasma. We obtained the maximum etch rate of 78 nm/min at the gas mixing ratio of CF$_4$(10%)/Ar(90%). The variation of volume density for F and Ar atoms are measured by the optical emission spectroscopy. As CF$_4$increased in CF$_4$/Ar plasma, the emission intensities of F increase, but Ar atoms decrease, which confirms our suggestion that emission intensity is proportional to the volume density of atoms. From X-ray photoelectron spectroscopy, the intensities of the Bi-O, the Eu-O and the Ti-O peaks are changed. By pure Ar plasma, intensity peak of the oxygen-metal (O-M : TiO$_2$, Bi$_2$O$_3$, Eu$_2$O$_3$) bond was seemed to disappear while the intensity of pure oxygen peak showed an opposite tendency. After the BET thin films was etched by CF$_4$/Ar plasma, the peak intensity of O-M bond increase slowly, but more quickly than that of peak belonged to pure oxygen atoms due to the decrease of Ar ion bombardment. Scanning electron microscopy was used to investigate etching Profile. The Profile of etched BET thin film was over 85$^{\circ}$./TEX>.

• Journal of the Korean Chemical Society
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• v.53 no.3
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• pp.293-301
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• 2009

Analytical results of a fixed concentration of Pb, Cd and Cr in the synthetic copper standard solution (RMs) for using the matrix no matched standard calibration curve at various wavelength by ICP showed that accuracy (140 $\sim$ 1,070% in case of Pb) is very poor at all wavelengths because of the Cu matrix effect. Analytical results of a fixed concentration of Pb, Cd and Cr in the different concentration solutions of Cu showed that found values were on the increase or decrease as the rate of a regular equation as the concentration of Cu was increased. Accuracies by the Cu matching method in the analysis of Pb, Cd and Cr in the synthetic copper standard solution (RMs) were higher than 99.9%.

• Korean Journal of Materials Research
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• v.12 no.9
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• pp.724-728
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• 2002

Inductively-coupled $N_2$O plasma was utilized to grow silicon dioxide at low temperature and applied to fabricate polycrystalline-silicon thin film transistors. At $400^{\circ}C$, the thickness of oxide was limited to 5nm and the oxide contained Si≡N and ≡Si-N-Si≡ bonds. The nitrogen incorporation improved breakdown field to 10MV/cm and reduced the interface charge density to $1.52$\times$10^{11}$ $cm^2$ with negative charge. The $N_2$O plasma gate oxide enhanced the field effect mobility of polycrystalline thin film transistor, compared to $O_2$ plasma gate oxide, due to the reduced interface charge at the $Si/SiO_2$ interface and also due to the reduced trap density at Si grain boundaries by nitrogen passivation.

• Journal of Environmental Health Sciences
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• v.31 no.2 s.83
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• pp.107-114
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• 2005

모발은 고통 없이 검체를 채취할 수 있고 저장이 간편하며 인체에 장기간 축적된 미네랄과 중금속함량을 측정하는데 매우 적당한 재료이다. 그러므로 45세 전후의 남자두발을 검체로 하여 상습흡연자(3년 이상 하루 1갑 이상흡연자)와 비흡연자 그리고 청소년을 대상으로 15종의 영양원소와 8종의 독성원소, 그리고 15종류의 기타원소를 조사하여 이들 미네랄 함량의 기초 자료를 제시하고자 하였다. 총 38종류의 원소분석은 정확도를 기하기 위하여 Trace elements, Inc (Dallas, Tx, USA)사에 의뢰하였으며, 이곳에서는 유도결합 플라즈마 질량분석기를 사용하여 분석하였다. 결과는 흡연자가 비 흡연자에 비하여 영양원소는 대체적으로 비슷하였으나 특히 Mg(P<0.05)와 Cu함량이 각각 3.9와 2.4 ppm의 차이로 흡연자가 낮았고, 독성원소는 Hg(P<0.001)가 0.16과 0.31 ppm으로써 0.15 ppm 차이로 흡연자가 높은 특징을 보였는데, 이것은 최대허용치인 0.18 ppm과 비교해 보았을 때 약 2배 이상 초과하는 것이 였엇다. 이러한 원인들은 흡연에 있다고 볼 수 있으며, Hg의 중독증상은 중추신경 장애와 의욕상실, 만성피로를 일으킬 수 있으며 미나마타병의 원인물질로 알려져 있다. 한편,청소년과 성인에 있어서 영양원소의 함량은 Cu, P, Mn, B가 각각 3.2, 2.1, 0.016, 0.03 ppm의 차이로 성인에서 높았다. 그러나 생리활성물질인 Ca, Na, K은 각각 55.3, 15.2, 9.0 ppm의 차이로 청소년에서 높았는데, 이것은 성장기 청소년들에게 있어서의 특징이라고 할 수 있다. 독성원소는 Hg가 0.16 ppm으로 성인에서, Cd는 0.01 ppm으로 청소년에서 높았지만 각각 최대 허용치인 0.18과 0.014 ppm 이하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.5
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• pp.378-384
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• 2003

Etching species in CF$_4$/Ar plasma and the behavior of etching rate of Bi$_4$-$_{x}$L$_{x}$rTi$_3$O$_2$ (BLT) films were investigated in inductively coupled plasma (ICP) reactor in terms of etch parameters. The etching rate as functions of CF$_4$ contents showed the maximum 803 $\AA$/min at 20% CF$_4$ addition in CF$_4$/Ar plasma. The increase of RF power and DC bias voltage caused to an increase of etch rate. The variation of relative volume densities for F and he atoms were measured with the optical emission spectroscopy (OES). The chemical states of BLT were investigated with using X-ray photoelectron spectroscopy (XPS). XPS narrow scan analysis shows that La-fluorides remained on the etched surface. The presence of maximum etch rate at CF$_4$(20%)/Ar(80%) may be explained by the concurrence of two etching mechanisms such as physical sputtering and chemical reaction. The roles of he ion bombardment include destruction of metal (Bi, La, Ti)-O bonds as well as assistant for chemical reaction of metals with fluorine atoms.oms.

• Proceedings of the KIEE Conference
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• 2004.11a
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• pp.72-74
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• 2004

In this study, we used a inductively coupled plasma (ICP) source for etching $Al_2O_3$ thin films because of its high plasma density, low process pressure and easy control bias power. $Al_2O_3$ thin films were etched using $Cl_2/BCl_3$, $N_2/Cl_2/BCl_3$, and Ar/$Cl_2/BCl_3$ plasma. The experiments were carried out measuring the etch rates and the selectivities of $Al_2O_3$ to $SiO_2$ as a function of gas mixing ratio, rf power, and chamber pressure. When $Cl_2$ 50% was added to $Cl_2/BCl_3$ plasma, the etch rate of the $Al_2O_3$ films was 118 nm/min. We also investigated the effect of gas addition. In case of $N_2$ addition, the etch rate of the $Al_2O_3$ films decreased while $N_2$ was added into $Cl_2/BCl_3$ plasma. However, the etch rate increased slightly as Ar added into $Cl_2/BCl_3$ plasma, and then further increase of Ar decreased the etch rate. The maximum etch rate was 130 nm/min at Ar 20% in $Cl_2/BCl_3$ plasma, and the highest etch selectivity was 0.81 in $N_2$ 20% in $Cl_2/BCl_3$ plasma. And, we obtained the results that the etch rate increases as rf power increases and chamber pressure decreases. The characteristics of the plasmas were estimated using optical emission spectroscopy (OES).

• Analytical Science and Technology
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• v.10 no.1
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• pp.35-42
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• 1997

The sample pretreatment technique using a high pressure acid digestion bomb for the analysis of ceramic capacitor materials, such as barium titanate and PZT, was studied. When the concentrations of hydrochloric acid were varied with the addition of nitric acid or distilled water, quantitative measurements for those samples were carried out using inductively coupled plasma atomic emission spectrometry. From this experiment the results indicate that most of elements, such as Ba, Mn, Zn, Si, etc., aren't affected by the concentration of hydrochloric acid but Nb and Zr are very susceptable to it. It however turns out that the digestion time relatively gave little effects on the analytical result. In case of Nb the ratio of hydrochloric acid to water should be greater than 3:1(v / v) for the best analytical result. For the Pb determination use of diluted hydrochloric acid compared to the mixture of nitric acid and hydrochloric acid showed a better analytical result.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.10
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• pp.662-667
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• 2014

B-doped Si nanoparticles were synthesized by using inductive coupled plasma and specially designed double tube reactor, and their microstructures were investigated. 0~10 sccm of $B_2H_6$ gas was injected during the synthesis of Si nanoparticles from $SiH_4$ gas. Highly crystalline Si nanoparticles were synthesized, and their crystallinity did not change with increase of $B_2H_6$ flow rates. From SEM measurement, their particle sizes were approximately 30 nm regardless of $B_2H_6$ flow rates. From SIMS analysis, almost saturation of B in Si nanoparticles was detected only when 1 sccm of $B_2H_6$ was injected. When $B_2H_6$ flow rate exceeded 5 sccm, higher concentration of B than solubility limit was detected even if any secondary phase was not detected in XRD or HR-TEM results. Due to their high electronic conductivity, those heavily B-doped Si nanoparticles can be a potential candidate for an active material in Li-ion battery anode.

• Applied Chemistry for Engineering
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• v.16 no.6
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• pp.853-856
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• 2005

Inductively coupled plasma reactive ion etching of magnetic tunnel junction (MTJ) stack, which is one of the key elements in magnetic random access memory, was studied. The MTJ stacks were patterned in nanometer size by electron(e)-beam lithography, and TiN thin films were employed as a hard mask. The etch process of TiN hard mask was examined using Ar, $Cl_2/Ar$, and $SF_6/Ar$. The TiN hard mask patterned by e-beam lithography was first etched and then the etching of MTJ stack was performed. The MTJ stacks were etched using Ar, $Cl_2/Ar$, and $BCl_3/Ar$ gases by varying gas concentration and pressure.