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Etch Characteristics of Magnetic Tunnel Junction Stack Patterned with Nanometer Size for Magnetic Random Access Memory  

Park, Ik Hyun (Department of Chemical Engineering and Institute of Clean Technology, Inha University)
Lee, Jang Woo (Department of Chemical Engineering and Institute of Clean Technology, Inha University)
Chung, Chee Won (Department of Chemical Engineering and Institute of Clean Technology, Inha University)
Publication Information
Applied Chemistry for Engineering / v.16, no.6, 2005 , pp. 853-856 More about this Journal
Abstract
Inductively coupled plasma reactive ion etching of magnetic tunnel junction (MTJ) stack, which is one of the key elements in magnetic random access memory, was studied. The MTJ stacks were patterned in nanometer size by electron(e)-beam lithography, and TiN thin films were employed as a hard mask. The etch process of TiN hard mask was examined using Ar, $Cl_2/Ar$, and $SF_6/Ar$. The TiN hard mask patterned by e-beam lithography was first etched and then the etching of MTJ stack was performed. The MTJ stacks were etched using Ar, $Cl_2/Ar$, and $BCl_3/Ar$ gases by varying gas concentration and pressure.
Keywords
MRAM; MTJ; ICP RIE; E-beam lithography;
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1 K. B. Jung, H. Cho, Y. B. Hahn, E. S. Lambers, S. Onishi, D. Johnson, A. T. Hurst, J. R. Childress, Y. D. Park, and S. J. Pearton, J. Appl. Phys., 85, 4788 (1999)   DOI   ScienceOn
2 W. Y. Lee and K. H. Shin, MRAM (magnetic random access memory) 기술현황 및 연구 동향, KlEEME, 13, 12 (2000)
3 W. J. Gallagher, S. S. P. Parlan, Y. Lu, X. P. Bian, A. Marly, K. P. Roche, R. A. Altman, S. A. Righton, C. Jahnes, T. M. Shas, and G. Xiao, J. Appl. Phys., 81 (1997)
4 S. Tehrani, J. M. Slaughter, E. Chen, M. Durlam, J. Shi, and M. DeHerrera, IEEE Trans. Magn., 35, 2814 (1999)   DOI   ScienceOn
5 J. S. Moodera and L. R. Kinder, J. Appl. Phys., 79 (1996)
6 N. Matsui, K. Mashimo, A. Egami, A. Konishi, O. Okada, and T. Tsukada, Vacuum, 66, 479 (2002)   DOI   ScienceOn
7 S. D. Kim, J. J. Lee, S. H. Lim, S. H. Han, and H. J. Kim, J. Appl. Phys., 85, 5992 (1999)   DOI   ScienceOn
8 D. J. Resnick, S. Pendharkar, K. Kyler, G. Kerszykowski, S. Clemens, H. Tompkins, M. Durlam, and S. Tehrani, Microelectron. Eng., 53, 367 (2000)   DOI   ScienceOn
9 J. E. E. Baglin, M. H. Tabacniks, R. Fontana, A. J. Kellock and T. T. Bardin, Mater. Sci. Forum, 248, 87 (1997)
10 J. Karttuen, J. Kiiham, and S. Franssilab, SPlE 2000, 4714, 90 (2000)