• Transactions of the Korean Society of Mechanical Engineers
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• v.16 no.12
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• pp.2407-2414
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• 1992

Constant temperature hot wire air flow meter for automobiles requires temperature compensation system because hot wire output signal is sensitive to ambient temperature variations as well as fluid velocity. The objectives of the present study are to design an air flow meter circuit which is capable of compensating the hot wire output signal for ambient temperature variations and to investigate the mechanism of such temperature compensation. This circuit is composed of platinum hot wire, platinum resistor, two variable resistors, a constant resistor and a DC-amplifier. In particular, by simply replacing a constant resistor in one of the bridge arms of the conventional circuit with platinum resistor and a variable resistor for the purpose of temperature compensation, the deviation of output signal with respect to ambient temperature variations between 27deg. C 70deg. C could be reduced to less than 2.5% for mass flow rate and to less than 5% for velocity respectively. The mechanism of temperature compensation against ambient temperature variations was explained by means of measuring the heat transfer coefficient with hot wire temperature variations and analyzing and analyzing conventional empirical equations qualitatively.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.5
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• pp.285-289
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• 2003

This paper proposes a 10 ${\mu}{\textrm}{m}$ thick oxide air-bridge structure which can be used as a substrate for RF circuits. The structure was fabricated by anodic reaction, complex oxidation and rnicrornachining technology using TMAH etching. High quality films were obtained by combining low temperature thermal oxidation (50$0^{\circ}C$, 1 hr at $H_2O$/O$_2$) and rapid thermal oxidation (RTO) process (105$0^{\circ}C$, 2 min). This structure is mechanically stable because of thick oxide layer up to 10 ${\mu}{\textrm}{m}$ and is expected to solve the problem of high dielectric loss of silicon substrate in RF region. The properties of the transmission line formed on the oxidized porous silicon (OPS) air-bridge were investigated and compared with those of the transmission line formed on the OPS layers. The insertion loss of coplanar waveguide (CPW) on OPS air-bridge was (about 1 dB) lower than that of CPW on OPS layers. Also, the return loss of CPW on OPS air-bridge was less than about - 20 dB at measured frequency region for 2.2 mm. Therefore, this technology is very promising for extending the use of CMOS circuitry to higher RF frequencies.

• Journal of the Korean Institute of Telematics and Electronics S
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• v.35S no.10
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• pp.1-10
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• 1998

It is important to know phase offsets of a spreading code in the code division multiple access(CDMA) mobile communication systems because different phase offsets of the same spreading code are used to distinguish each base station. When the period of the code is not that long, the relative phase offset between the code and its shifted code can be found by comparing them, but as the period of the code increases it becomes difficult to find the phase offset. This paper describes a method to calculate the phase offset of a binary code based on the number theoretical approach. We define an accumulator function which plays a central role in this paper, and relationships between the functions are clarified. This number theoretical approach and their results show that this method is very easy for the phase offset calculation. Its application to the CDMA system and circuit realization of the phase offset calculation are also discussed.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.2
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• pp.317-326
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• 2016

In this paper, a logic eFuse (electrical Fuse) OTP (One-Time Programmable) memory IP (Intellectual Property) using only logic transistors to reduce the development cost and period of OTP memory IPs is designed. To secure the reliability of other IPs than the OTP memory IP, a higher voltage of 2,4V than VDD (=1.5V) is supplied to only eFuse links of eFuse OTP memory cells directly through an external pad FSOURCE coming from test equipment in testing wafers. Also, an eFuse OTP memory cell of which power is supplied through FSOURCE and hence the program power is increased in a two-dimensional memory array of 128 rows by 8 columns being also able to make the decoding logic implemented in small area. The layout size of the designed 1kb eFuse OTP memory IP with the Dongbu HiTek's 110nm CIS process is $295.595{\mu}m{\times}455.873{\mu}m$ ($=0.134mm^2$).

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.5
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• pp.738-744
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• 2016

Current rating of a power cable can be calculated by the maximum allowable temperature in an insulating material considering the heat transfer from cable conductor. Therefore, it is very important to calculate the current rating using electrical equivalent circuit by calculated cable thermal circuit parameters but, it has not been fully investigated yet. In this paper, in order to determine the current rating of power cable, conventional calculation method has been reviewed considering the conductor resistance, loss factor of sheath, dielectric losses and thermal resistances based on the maximum allowable temperature of 345 kV $2500mm^2$ XLPE cable. To confirm the calculation result of the current rating, the conductor temperature should be examined whether it reaches the maximum allowable temperature by the thermal equivalent circuit of the cable. Then, utilizing EMTP (Electro-Magnetic Transient Program) which is a conventional program for electrical circuit, the thermal equivalent circuit was transformed to an electric equivalent circuit using an analogous relationship between thermal circuit and electrical circuit, and temperature condition including cable conductor, sheath, cable jacket could be calculated by the current rating of 345 kV $2500mm^2$ XLPE cable.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.11
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• pp.101-106
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• 2014

This paper presents a wide dynamic range radio-frequency (RF) root-mean-square (RMS) power detector using an automatic gain control (AGC) loop. The AGC loop consists of a variable gain amplifier (VGA), RMS conversion block and gain control block. The VGA exploits dB-linear gain characteristic of the cascade VGA. The proposed circuit utilizes full-wave squaring and generates a DC voltage proportional to the RMS of an input RF signal. The proposed RMS power detector operates from 500MHz to 5GHz. The detecting input signal range is from 0 dBm to -70 dBm or more with a conversion gain of -4.53 mV/dBm. The proposed RMS power detector is designed in a 65-nm 1.2-V CMOS process, and dissipates a power of 5 mW. The total active area is $0.0097mm^2$.

• Journal of IKEEE
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• v.17 no.1
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• pp.77-82
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• 2013

In this paper, dc-dc buck converter controled by the peak current-mode pulse-width-modulation (PWM) presented. Based on the small-signal model, we propose the novel methods of the power stage and the systematic stability designs. To improve the reliability and performance, over-temperature and over-current protection circuits have been designed in the dc-dc converter systems. To prevent electrostatic An electrostatic discharge (ESD) protection circuit is proposed. The proposed dc-dc converter circuit exhibits low triggering voltage by using the gate-substrate biasing techniques. Throughout the circuit simulation, it confirms that the proposed ESD protection circuit has lower triggering voltage(4.1V) than that of conventional ggNMOS (8.2V). The circuit simulation is performed by Mathlab and HSPICE programs utilizing the 0.35um BCD (Bipolar-CMOS-DMOS) process parameters.

• Journal of the Microelectronics and Packaging Society
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• v.26 no.4
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• pp.141-148
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• 2019

Electronic substrates used in a mobile device is composed of various materials, and when the temperature is changed during manufacturing or operating, thermal deformation and stress concentration occur due to the difference in thermal expansion coefficient of each material. The shadow moiré technique is a non-contact optical method that measures shape or out-of-plane displacement over the entire area, but it is necessary to overcome the Talbot effect for high sensitivity applications. In this paper, LED light sources of various wavelengths was used to overcome the Talbot effect caused in the shadow moiré technique. By using the phase shift method, an experimental method to retain the measurement sensitivity within 10 ㎛/fringe was proposed and evaluated, and this method is applied to the thermal deformation measurement of the mobile electronic substrate. In the case of using white light, there were several areas that could not be measured due to the Talbot effect, but in the case of using blue LED light, it was shown that a precise moiré pattern with a sensitivity of 6.25 ㎛/fringe could be obtained in most areas.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• v.9 no.2
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• pp.677-680
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• 2005

In numerical analysis on the thermal performance of the heat exchanger with phase change fluids, the numerical values of thermodynamic properties are needed. But the steam table should be modeled properly as the direct use of thermodynamic properties of the steam table is impossible. In this study the function approximation characteristics of neural networks was used in modeling the saturated vapor region of refrigerant R12. The neural network consists of one input layer with one node, two hidden layers with 10 and 20 nodes each and one output layer with 7 nodes. Input can be both saturation temperature and saturation pressure and two cases were examined. The proposed model gives percentage error of ${\pm}$0.005% for enthalpy and entropy, ${\pm}$0.02% for specific volume and ${\pm}$0.02% for saturation pressure and saturation temperature except several points. From this results neural network could be a powerful method in function approximation of saturated vapor region of R12.

• The Transactions of the Korean Institute of Power Electronics
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• v.16 no.3
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• pp.242-249
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• 2011

The proposed converter has easy device selection for high step-up and high power applications since boost half bridge and voltage doubler cells are connected, respectively, in parallel and series in order to increase output power and voltage. Especially, optimized design of high frequency transformers is possible owing to reduced turn ratio and eliminated dc offset, and distributed power through three cores is beneficial to low profile and thermal distribution. The proposed converter does not necessitate start-up circuit and additional clamp circuit due to the use of whole duty range between 0 and 1 and is suitable for applications with wide input voltage range. Also, high efficiency can be achieved since ZVS turn on of switches are achieved in wide duty cycle range and ZCS turn on and off of diodes are achieved. The proposed converter was validated through 5 kW prototype.