• Proceedings of the Optical Society of Korea Conference
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• 2001.02a
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• pp.180-181
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• 2001

이 논문은 채널당 1Gbps로 동작하는 10채널 광 수신기를 0.25$mu extrm{m}$ CMOS공정을 이용하여 설계한 것이다. 광 수신기는 크게 2부분으로 나눠지는데 첫 번째 부분은 입력된 전류 신호를 전압 신호로 변환시켜주는 역할을 하는 트랜스임피던스 전치증폭기이고, 다음 부분은 원하는 디지털 레벨로 풀스윙 할 수 있도록 하는 후치증폭기이다. 전치증폭기의 출력 전압은 스윙폭에 무관하게 그 다음 단에서 적당한 디지털 레벨 데이터로 변환되어야한다. (중략)

• Journal of Navigation and Port Research
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• v.33 no.8
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• pp.505-511
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• 2009

Vessels on anchoring are frequently dragged due to the increased area of wind pressure by enlargement of ship's size and sudden gust of winds in recent years. In the view point of the ship's navigators, the proper measurements corresponding to the dragging of anchor should be taken into account concerned about the time for the occurring of dragging by the external forces such as wind and wave, the pattern and speed of dragging and the possibility of collisions with any other vessels or obstacles. In this paper, it was examined the actual dragging anchor in T.S. HANBADA due to the wind and waves. From this case, it was found the critical external forces by which she was begun to dragged comparing the force by the wind, frictional resistance, drifting force and ship motion moment with the holding power. Also, through the analysis of the dragging pattern, it was known the alteration range of heading angle, swinging width and dragging speed etc.

• The Transactions of the Korean Institute of Power Electronics
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• v.6 no.1
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• pp.13-20
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• 2001

In this appear, we proposed the new current mirror has large output resistance and excellent current matching characteristics. If supply voltage were lowered under the conventional CMOS operational amplifier, the wing of out put power could be restricted. So, the paper suggests a new way of differential operational amplifier circuit to solve the problem. The paper proposes that a new current mirror increases output swing and has a stable operation. We compare and verify characteristics of the proposed current mirror with the cascoded current mirror and the regulated current mirror through simulation.

• Korean Journal of Applied Biomechanics
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• v.18 no.3
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• pp.51-59
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• 2008

The objective of this study is to kinematically analyze forehand & backhand strokes of abscission handicap wheelchair table tennis athletes. The participant of this study were picked out of national athletes who have abscission handicap. Forehand stroke movement was expected to show a throw like motion. However, external rotation and internal rotation of the right arm created a backswing and an impact. Backhand stroke was expected to show a push like motion, and as expected, proximal part of the body didn't participate in the stroke motion, but the distal part, the right arm, rotated internally to backswing and external rotated to impact to form a push like motion. Forehand swing was expected to show throw like motion according to the Link Segmental System principle. However, abscission handicap athlete didn't show clear linking structure connecting proximal and distal parts. Successful strokes were dependant only on the angle of arm rotation.

• Korean Journal of Applied Biomechanics
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• v.18 no.4
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• pp.151-159
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• 2008

In this research, kinematic comparative analysis was performed on strokes of abscission and spinal cord injured athletes who participated in 2008 Beijing Paralympics wheelchair table tennis games. Strokes of all situations were collected under real match-like conditions. Among those, three major forehand stroke motions and backhand stroke motions were drawn Data collected by 9 infrared cameras were expressed in angular motions using graphic program LabVIEW7.0. As a result, forehand stroke of spin handicap athlete from analyzed images, the rotations of the trunk happened with the rotations of shoulder and the flexion extensions of elbow nearly at the same time. According to these results, insufficient turning force or speed of rackets is recompensed using flexion. backhand stroke of spin handicap athlete from analyzed images, the rotations of the trunk, the flexion extensions of the elbow and the flexion extensions of the shoulder were lined up on the prolongations of ping-pong balls. Forehand stroke of abscission athletes was done by outward rotation of the arm using backswing and inner rotation. As for backhand stroke, backswing was made by inner rotation in the spin of shoulder and waist. And after the backswing, impact was formed in wide outer rotation towards the ball.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.6
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• pp.85-96
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• 2000

It is necessary that fully differential operational amplifier circuit should drive an external load in the VLSI design such as SCF(Switched Capacitor Filter), D/A Converter, A/D Converter, Telecommunication Circuit and etc. The conventional CMOS operational amplifier circuit has many problems according to CMOS technique. Firstly, Capacity of large loads are not able to operate well. The problem can be solve to use class AB stages. But large loads are operate a difficult, because an element of existing CMOS has a quadratic functional relation with input and output voltage versus output current. Secondly, Whole circuit of dynamic range decrease, because a range of input and output voltages go down according as increasing of intergration rate drop supply voltage. The problem can be improved by employing fully differential operational amplifier using differential output stage with wide output swing. In this paper, we proposed new current mirror has large output impedance and good current matching with input an output current and compared with characteristics for operational amplifier using cascoded current mirror. To obtain large output swing and low power consumption we suggest a fully differential operational amplifier. The circuit employs an output stage composed new current mirror and two amplifier stage. The proposed circuit is layout and circuit of capability is inspected through simulation program(SPICE3f).

• Korean Journal of Applied Biomechanics
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• v.12 no.2
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• pp.331-344
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• 2002

The purpose of this study was to compare between success and failure in bowling throw motions. For the data analysis, it was utilized by the method of three dimensional motion analysis and obtained kinematical parameters of stride, COG position and ball position through the address and release motion. The subjects of this study were three female bowling players, and obtained conclusions were as follows; Displacements of stride were not significance of success events, 4th and 5th phase stride were longer than failure. COG variation for height were less than failure, but there not significance between success and failure. The ball position of 3 th phase was lowest than other phases, and throw motions were stable by the small variations for upward downward.

• Electrical & Electronic Materials
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• v.6 no.4
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• pp.330-338
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• 1993

Channel의 폭과 길이가 15 x 15.mu.m, 15 x 1.5.mu.m, 1.9 x 1.7.mu.m인 비휘발성 SNOSFET EEPROM 기억소자를 CMOS 1 Mbit 설계규칙에 의하여 제작하고 체널크기에 따른 $I_{D}$- $V_{G}$특성 및 스위칭 특성을 조사하여 비교하였다. 게아트에 전압을 인가하여 질화막에 전하를 주입시키거나 소거시킨 후 특성을 측정한 결과, 드레인전류가 적게 흐르는 저전도상태와 전류가 많이 흐르는 고전도상태로 되는 것을 확인하였다. 15 x 15.mu.m의 소자는 전형적인 long channel특성을 나타냈으며 15 x 1.5.mu.m, 1.9 x 1.7.mu.m는 short channel특성을 보였다. $I_{D}$- $V_{G}$ 특성에서 소자들의 임계 문턱전압은 저전도상태에서 $V_{W}$=+34V, $t_{W}$=50sec의 전압에서 나타났으며 메모리 윈도우 폭은 15 x 15.mu.m, 15 x 1.5.mu.m, 1.9 x 1.7.mu.m의 소자에서 각각 6.4V, 7.4V, 3.5V였다. 스위칭 특성조사에서 소자들은 모두 논리스윙에 필요한 3.5V 메모리 윈도우를 얻을 수 있었으며 논리회로설계에 적절한 정논리 전도특성을 가졌다.특성을 가졌다.다.다.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.3
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• pp.479-485
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• 2006

The double gate(DG) MOSFET is a promising candidate to further extend the CMOS scaling and provide better control of short channel effect(SCE). DGMOSFETs, having ultra thin undoped Si channel for SCEs control, ale being validated for sub-20nm scaling. A novel analytical transport model for the subthreshold mode of DGMOSFETs is proposed in this paper. The model enables analysis of short channel effect such as the subthreshold swing(SS), the threshold voltage roil-off$({\Delta}V_{th})$ and the drain induced barrier lowering(DIBL). The proposed model includes the effects of thermionic emission and quantum tunneling of carriers through the source-drain barrier. An approximative solution of the 2D Poisson equation is used for the distribution of electric potential, and Wentzel-Kramers-Brillouin approximation is used for the tunneling probability. The new model is used to investigate the subthreshold characteristics of a double gate MOSFET having the gate length in the nanometer range $(5-20{\sim}nm)$ with ultra thin gate oxide and channel thickness. The model is verified by comparing the subthreshold swing and the threshold voltage roll-off with 2D numerical simulations. The proposed model is used to design contours for gate length, channel thickness, and gate oxide thickness.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.11
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• pp.2373-2377
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• 2009

In this paper, the threshold voltage characteristics have been analyzed using three dimensional Poisson's equation for FinFET. The FinFET is extensively been studing since it can reduce the short channel effects as the nano device. We have presented the short channel effects such as subthreshold swing and threshold voltage for PinFET, using the analytical three dimensional Poisson's equation. We have analyzed for channel length, thickness and width to consider the structural characteristics for FinFET. Using this model, the subthreshold swing and threshold voltage have been analyzed for FinFET since the potential and transport model of this analytical three dimensional Poisson's equation is verified as comparing with those of the numerical three dimensional Poisson's equation.