• Journal of Sensor Science and Technology
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• v.18 no.3
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• pp.222-225
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• 2009

This paper describes the fabrication and characteristics of Schottky micro hydrogen sensors for high temperatures by using polycrystalline(poly) 3C-SiC thin films grown on Si substrates with thermal oxide layer using APCVD. Pd/poly 3C-SiC Schottky diodes were made and evaluated by I-V and C-V measurements. Electric current density and barrier height voltage were $2{\times}10^{-3}A/cm^2$ and 0.58 eV, respectively. These devices could operate stably at about 400 $^{\circ}$. The characteristics of implemented sensors have been investigated in terms of sensitivity, linearity of response, response rate, and response time. Therefore, from these results, Pd/poly 3C-SiC Schottky devices have very high potential for high temperature $H_2$ sensor applications.

• Journal of Sensor Science and Technology
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• v.17 no.6
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• pp.414-417
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• 2008

This paper describes the fabrication of a Pd/poly 3C-SiC Schottky diode and its characteristics, in which the poly 3C-SiC layer and Pd Schottky contact were deposited by using APCVD and sputter, respectively. Crystalline quality, uniformity, and preferred orientations of the Pd thin film were evaluated by SEM and XRD, respectively. Pd/poly 3C-SiC schottky diodes were fabricated and characterized by I-V and C-V measurements. Its electric current density Js and barrier height voltage were measured as $2{\times}10^{-3}A/cm^2$ and 0.58 eV, respectively. These devices were operated until about $400^{\circ}C$. Therefore, from these results, Pd/poly 3C-SiC Schottky devices have very high potential for high temperature chemical sensor applications.

• Journal of the Korean Institute of Telematics and Electronics
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• v.23 no.4
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• pp.484-489
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• 1986

A device with variable stepped oxide layer along the edge region of Schottky junction have been designed and fabricated. The effect of this stepped oxide layer in the edge region improves the breakdown voltage as a result of the by increase of the depletion layer width, and decreases the leakage current as compared to the effect of conventional field oxide layer, when the reverse voltage was applied. Experimental results shown that the Schottky diode with the the reverse voltage was applied. Experimenal results show that the Schottky diode with the optimal stepped oxide layer maintains nearly ideal I-V characteristics and excellent breakdown voltage(170V) by reducing the edge effect inherent in metal-semiconductor contacts. The optimal conditions of stepped oxide layer are 1700\ulcornerin thickness and 10\ulcorner in length.

• Journal of the Korean Institute of Telematics and Electronics
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• v.23 no.5
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• pp.712-718
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• 1986

A shallow n+ layer of implanted phosphorus was used to lower the barrier height of PtSinSi schottky diodes. The reduction of barrier height of the forward turn-on voltages from 400mV to 180mV of the forward was followed by implantation of phosphorus at 35KeV with an ion dose of 8.0x10**12 atoms/cm\ulcornerand was activated at 925\ulcorner for 30min in dry O2. The test result showed that, as the ion-implanted dose increased, the forward turn-on voltage and reverse breakdown voltage were linearly decreased, but the saturation current and ideality factor(n) were linearly increased.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.7-12
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• 2004

탄화규소 전력반도체 소자는 실리콘 전력반도체 소자에 비해 우수한 물질특성을 갖고 있어 성능 측면에서 뿐 만 아니라 전력변환장비의 크기를 획기적으로 줄일 수 있는 새로운 반도체 소자이다. 특히 unipolar 계열의 소자에서 괄목할 만한 특성을 보이고 있다. 현재 쇼트키 장벽 다이오드의 경우 5kV급, UMOSFET의 경우 3kV급의 소자까지 보고되고 있으며 반도체 물질 중에서 가장 활발히 연구가 진행되고 있는 분야 중의 하나이다. 단결정성장 분야에서도 3인치 급이 상용화 되었으며 4인치 크기의 웨이퍼의 상용화가 조만간 실현될 것으로 기대되고 있다. 이러한 기술적 발전을 토대로 600V, 1200V급 쇼트키 다이오드가 PFC boost 용으로 시판되고 있으나 아직은 다른 반도체 소자에 비해 미미한 실정이다. 현재에는 $250^{\circ}C$까지의 온도영역에서 실리콘 SOI(Silicon on Insulator) 소자가 주로 사용되고 있다. 그러나 $300^{\circ}C$를 넘는 온도 영역에서는 실리콘으로는 한계가 있고, 특히 SOI는 전력소자에 적용하기는 한계가 있어 주로 저전력 고온소자가 필요한 부분에 적용이 되고 있다. 따라서 전력용에 적합한 고온소자로 탄화규소 소자의 연구가 활발히 진행되고 있다. 현재의 추세로 보아 $200-300^{\circ}C$ 영역의 응용분야에서는 SOI와 탄화규소가 함께 적용될 것으로 예상되며, $300^{\circ}C$를 넘는 온도영역에서는 탄화규소 소자의 우월적 지위가 예상된다. 이러한 이유로 탄화규소 반도체소자의 응용 분야는 크게 확대될 것으로 예상되며 국가적 차원의 지원 및 육성이 요구되는 분야 중의 하나이다.t로 사용한 소자보다 발광 소광 현상이 적게 일어난 것에 기인하였다고 생각된다. 두 소자 모두 $40mA/cm^2$ 에서 이상적인 화이트 발란스와 같은(0.33,0.33)의 색좌표를 보였다.epsilon}_0=1345$의 빼어난 압전 및 유전특성과 $330^{\circ}C$의 높은 $T_c$를 보였고 그 조성의 vibration velocity는 약4.5 m/s로 나타났다.한 관심이 높아지고 있다. 그러나 고 자장 영상에서의 rf field 에 의한 SAR 증가는 중요한 제한 요소로 부각되고 있다. 나선주사영상은 SAR 문제가 근원적으로 발생하지 않고, EPI에 비하여 하드웨어 요구 조건이 낮아 고 자장에서의 고속영상방법으로 적합하다. 본 논문에서는 고차 shimming 을 통하여 불균일도를 개선하고, single shot 과 interleaving 을 적용한 multi-shot 나선주사영상 기법으로 $100{\times}100$에서 $256{\times}256$의 고해상도 영상을 얻어 고 자장에서 초고속영상기법으로 다양한 적용 가능성을 보였다. 연구에서 연구된 $[^{18}F]F_2$가스는 친핵성 치환반응으로 방사성동위원소를 도입하기 어려운 다양한 방사성의 약품개발에 유용하게 이용될 수 있을 것이다.었으나 움직임 보정 후 영상을 이용하여 비교한 경우, 결합능 변화가 선조체 영역에서 국한되어 나타나며 그 유의성이 움직임 보정 전에 비하여 낮음을 알 수 있었다. 결론: 뇌활성화 과제 수행시에 동반되는 피험자의 머리 움직임에 의하여 도파민 유리가 과대평가되었으며 이는 이 연구에서 제안한 영상정합을 이용한 움직임 보정기

• Journal of IKEEE
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• v.23 no.1
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• pp.193-199
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• 2019

In this study, we have proposed a floating metal guard ring structure based on TCAD simulation in order to enhance the breakdown voltage characteristics of gallium oxide ($Ga_2O_3$) vertical high voltage switching Schottky barrier diode. Unlike conventional guard ring structures, the floating metal guard rings do not require an ion implantation process. The locally enhanced high electric field at the anode corner was successfully suppressed by the metal guard rings, resulting in breakdown voltage enhancement. The number of guard rings and their width and spacing were varied for structural optimization during which the current-voltage characteristics and internal electric field and potential distributions were carefully investigated. For an n-type drift layer with a doping concentration of $5{\times}10^{16}cm^{-3}$ and a thickness of $5{\mu}m$, the optimum guard ring structure had 5 guard rings with an individual ring width of $1.5{\mu}m$ and a spacing of $0.2{\mu}m$ between rings. The breakdown voltage was increased from 940 V to 2000 V without degradation of on-resistance by employing the optimum guard ring structure. The proposed floating metal guard ring structure can improve the device performance without requiring an additional fabrication step.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.32 no.2
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• pp.45-50
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• 2022

Ga₂O₃ thin films were grown on n-type Si substrates at various growth temperatures of 500, 550, 600, 650 and 700℃. The Ga₂O₃ thin films grown at 500℃ and 550℃ were characterized as featureless flat surface. Grown at higher temperatures (600, 650, and 700℃) showed very rough surface morphology. To figure out the annealing effect on the thin films grown at relatively low temperatures (500, 550, 600, 650 and 700℃), the Ga₂O₃ films were thermally treated at 900℃ for 10 minutes. Crystal structure of the Ga₂O₃ films grown at 500 and 550℃ were changed from amorphous to polycrystalline structure with flat surface. Ga₂O₃ film grown at 550℃ was chosen for the fabrication of a Schottky barrier diode (SBD). Electrical properties of the SBDs depend on the thermal treatment were evaluated. A MSM type photodetector was made on the low temperature grown Ga₂O₃ thin film. The photocurrent for the illumination of 266 nm wavelength showed 5.32 times higher than dark current at the operating voltage of 10 V.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.10
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• pp.1096-1103
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• 2008

This paper proposes an individual order predistortion linearizer using intermodulation distortion(IMD) generator for cancellation the third and the fifth IMD of power amplifier. The IMD generator for controlling the third and the fifth IMD consist of common Emitter amplifier and Schottky diode. These signals are generated by series feedback of Schottky diode to obtain the inverse AM/AM and AM/PM characteristics of power amplifier. The individual order predistorters are consisted of individual IMD generator, power splitter and combiner. The test results show that the third and the fifth IMD can be improved by a maximum 13.5 dB and 0.9 dB in case of CW 2-tone signals. Also, the Adjacent Channel Leakage Ratio(ACLR) can be improved 2.3 dB, 2.5 dB at ${\pm}0.885$ MHz, ${\pm}1.23$ MHz offset frequency for CD-MA IS-95 2FA signals.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2015.10a
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• pp.412-415
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• 2015

This paper presents a MPPT(Maximum Power Point Tracking) control CMOS interface circuit for vibration energy harvesting. The proposed circuit consists of an AC-DC converter, MPPT Controller, DC-DC boost converter and PMU(Power Management Unit). The AC-DC converter rectifies the AC signals from vibration devices(PZT). MPPT controller is employed to harvest the maximum power from the PZT and increase efficiency of overall system. The DC-DC boost converter generates a boosted and regulated output at a predefined level and provides energy to load using PMU. A full-wave rectifier using active diodes is used as the AC-DC converter for high efficiency, and a schottky diode type DC-DC boost converter is used for a simple control circuitry. The proposed circuit has been designed in a 0.35um CMOS process. The chip area is $950um{\times}920um$.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.9 no.3
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• pp.621-627
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• 2008

This paper presents a compact and miniaturized power detector utilizing low temperature co-fired ceramics(LTCC) technology for the application in wireless handset system to monitor the transmitting power at the frequency of 824-849MHz. The proposed power detector is composed of detector diode, lumped components for matching network, and LTCC stripline coupler based on LTCC substrate technology. A 20dB LTCC stripline direction coupler is designed and implemented with many bending section in order to reduce the practically occupied area for miniaturization. A zero bias schottky diode is adopted for detector design because of its high speed operation with minimized loss. The measured performances of fabricated detector agree well with the predicted results with a good linearity within the effective input RF power range.