Journal of Sensor Science and Technology (센서학회지)

The Korean Sensors Society (한국센서학회)
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Fabrication of a Pd/poly 3C-SiC Schottky diode hydrogensensor and its characteristics

Pd/다결정 3C-SiC 쇼트키 다이오드형 수소센서의 제작과 그 특성

  • 정귀상 (울산대학교 전기전자정보시스템공학부) ;
  • 안정학 (울산대학교 전기전자정보시스템공학부)
  • Published : 2009.05.31
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Abstract

This paper describes the fabrication and characteristics of Schottky micro hydrogen sensors for high temperatures by using polycrystalline(poly) 3C-SiC thin films grown on Si substrates with thermal oxide layer using APCVD. Pd/poly 3C-SiC Schottky diodes were made and evaluated by I-V and C-V measurements. Electric current density and barrier height voltage were $2{\times}10^{-3}A/cm^2$ and 0.58 eV, respectively. These devices could operate stably at about 400 $^{\circ}$. The characteristics of implemented sensors have been investigated in terms of sensitivity, linearity of response, response rate, and response time. Therefore, from these results, Pd/poly 3C-SiC Schottky devices have very high potential for high temperature $H_2$ sensor applications.

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References

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