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http://dx.doi.org/10.7471/ikeee.2019.23.1.193

Improved breakdown characteristics of Ga2O3 Schottky barrier diode using floating metal guard ring structure  

Choi, June-Heang (School of Electronic and Electrical Engineering, Hongik University)
Cha, Ho-Young (School of Electronic and Electrical Engineering, Hongik University)
Publication Information
Journal of IKEEE / v.23, no.1, 2019 , pp. 193-199 More about this Journal
Abstract
In this study, we have proposed a floating metal guard ring structure based on TCAD simulation in order to enhance the breakdown voltage characteristics of gallium oxide ($Ga_2O_3$) vertical high voltage switching Schottky barrier diode. Unlike conventional guard ring structures, the floating metal guard rings do not require an ion implantation process. The locally enhanced high electric field at the anode corner was successfully suppressed by the metal guard rings, resulting in breakdown voltage enhancement. The number of guard rings and their width and spacing were varied for structural optimization during which the current-voltage characteristics and internal electric field and potential distributions were carefully investigated. For an n-type drift layer with a doping concentration of $5{\times}10^{16}cm^{-3}$ and a thickness of $5{\mu}m$, the optimum guard ring structure had 5 guard rings with an individual ring width of $1.5{\mu}m$ and a spacing of $0.2{\mu}m$ between rings. The breakdown voltage was increased from 940 V to 2000 V without degradation of on-resistance by employing the optimum guard ring structure. The proposed floating metal guard ring structure can improve the device performance without requiring an additional fabrication step.
Keywords
gallium oxide; power diode; schottky barrier diode; high voltage switching device; guard ring; floating metal; breakdown voltage;
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