• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.6
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• pp.1154-1162
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• 2016

This paper proposes a fast-transient digital LDO(Low dropout) regulator with binary-weighted current control technique. Conventional digital LDO takes a long time to stabilize the output voltage, because it controls the amount of current step by step, thus ringing problem is generated. Binary-weighted current control technique rapidly stabilizes output voltage by removing the ringing problem. When output voltage reliably reaches the target voltage, It added the FRZ mode(Freeze) to stop the operation of digital LDO. The proposed fast response digital LDO is used with a slow response DC-DC converter in the system which rapidly changes output voltage. The proposed digital controller circuit area was reduced by 56% compared to conventional bidirectional shift register, and the ripple voltage was reduced by 87%. A chip was implemented with a $0.18{\mu}F$ CMOS process. The settling time is $3.1{\mu}F$ and the voltage ripple is 6.2mV when $1{\mu}F$ output capacitor is used.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.11
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• pp.34-40
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• 2011

This paper presents a low-dropout (LDO) linear regulator using ultra-low output impedance buffer for frequency compensation. The proposed buffer achieves ultra low output impedance with dual shunt feedback loops, which makes it possible to improve load and line regulations as well as frequency compensation for low voltage applications. A reference control scheme for programmable output voltage of the LDO linear regulator is presented. The designed LDO linear regulator works under the input voltage of 2.5~4.5V and provides up to 300mA load current for an output voltage range of 0.6~3.3V.

• Journal of IKEEE
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• v.27 no.3
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• pp.333-339
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• 2023

The global market for wearable devices is growing, driving demand for efficient PMICs. Wearable PMICs must be highly energy-efficient despite limited hardware resources. Advancements in process technology enable low-power consumption, but traditional analog LDO regulators face challenges with reduced power supply voltage. In this paper, a novel ADC design with a 3-bit continuous-time flash ADC for the coarse loop and a 5-bit discrete-time SAR ADC for the fine loop is proposed for digital LDO, achieving a 34.78 dB SNR and 5.39 bits ENOB in a 55-nm CMOS technology.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2014.10a
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• pp.585-588
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• 2014

This paper presents a self-powered sensor node circuit using photovoltaic and vibration energy harvesting. The harvested energy from a solar cell and a vibration device(PZT) is stored in a storage capacitor. The stored energy is managed by a PMU(Power Management Unit). In order to supply a stable voltage to the sensor node, an LDO(Low Drop Out Regulator) is used. The LDO drives a temperature sensor and a SAR ADC(Successive Approximate Register Analog-to-Digital Converter), and 10-bit digital output data corresponding to current temperature is obtained. The proposed circuit is designed in a 0.35um CMOS process, and the designed chip size including PADs is $1.1mm{\times}0.95mm$.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.12 no.5
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• pp.893-899
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• 2008

Behavioral level simulations of LDO voltage regulator and phase locked loop(PLL) are performed with CPPSIM, a behavioral-level simulation tool based on C language. The validity of the simulation tool is examined by modeling analog circuits and simulating the circuits. In addition, the designed PLL adopted digital architecture to possess advantages of digital circuits.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.28 no.7
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• pp.571-575
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• 2017

This paper presents a C-band bi-directional T/R chipset in $0.13{\mu}m$ TSMC CMOS technology for phased array antenna. The T/R chipset, which is a key component of phased array antenna, consists of a 6 bit phase shifter, a 6 bit step attenuator, and three bi-directional gain amplifiers. The phase shifter is controlled up to $354^{\circ}$ with $5.625^{\circ}$ phase step for precise beam steering. The step attenuator is also controlled up to 31.5 dB with 0.5 dB attenuation step for the side lobe level rejection. The LDO(Low Drop Output) regulator for stable 1.2 V DC power and the SPI(Serial Peripheral Interface) for digital control are integrated in the chipset. The chip size is $2.5{\times}1.5mm^2$ including pads.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.21 no.4
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• pp.123-127
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• 2021

Millimeter-wave tracking radars should be operated in various environmental restrictions, thus they demand more computing power and smaller size compared to conventional tracking radars. This paper presents the design and implementation of the compact power supply for millimeter-wave tracking radar applications. To meet requirements of low voltage/high current and voltage accuracy for FPGA/DSP digital circuits, Point of Load (POL) converters are used in order to enhance power density and system efficiency. LDO (Low Dropout) is applied for the output voltage under the light load condition, then the single-input-multi-output power supply with max power of 375 W and 8 outputs is developed. The proposed power supply achieves output voltage accuracy of ±2 % and noise level of <50 mVpp % under full load conditions.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.29 no.5
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• pp.383-388
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• 2018

This paper presents a 1.8 GHz six-port-based impedance modulator using CMOS technology, which can select an arbitrary load impedance with switch control. The proposed 1.8-GHz impedance modulator comprises a Wilkinson power divider, three quadrature hybrid couplers, and four SP3T switches for each load impedance selection. The measured insertion loss of -13 dB and the input/output return losses of >10 dB are achieved in the range of 1.4~2.2 GHz. The low drop output regulator for a stable 3.3 V DC power and the serial peripheral interface(SPI) for an easy digital control are integrated. The chip size, including the pads, is $1.7{\times}1.8mm^2$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.9
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• pp.14-23
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• 2010

This paper reports the fabrication of a DVB-T/H System in Package (SiP) that is able to receive and process the DVB-T/H signal. The DVB-T/H is the European telecommunication standard for Digital Video Broadcasting (DVB). An IC-embedded Printed Circuit Board (PCB) process, interpose a chip between PCB layers, has applied to the DVB-T/H SiP. The chip inserted in DVB-T/H SiP is the System on Chip (SoC) for mobile TV. It is comprised of a RF block for DVB-T/H RF signal and a digital block to convert received signal to digital signal for an application processor. To operate the DVB-T/H IC, a 3MHz DC-DC converter and LDO are on the DVB-T/H SiP. And a 38.4MHz crystal is used as a clock source. The fabricated DVB-T/H SiP form 4 layers which size is $8mm{\times}8mm$. The DVB-T/H IC is located between 2nd and 3rd layer. According to the result of simulation, the RF signal sensitivity is improved since the layout modification of the ground plane and via. And we confirmed the adjustment of LC value on power transmission is necessary to turn down the noise level in a SiP. Although the size of a DVB-T/H SiP is decreased over 70% than reference module, the power consumption and efficiency is on a par with reference module. The average power consumption is 297mW and the efficiency is 87%. But, the RF signal sensitivity is declined by average 3.8dB. This is caused by the decrease of the RF signal sensitivity which is 2.8dB, because of the noise from the DC-DC converter.