• Title/Summary/Keyword: 듀얼 포트

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Design of the Asynchronous Quasi Dual-port SRAM Based on a Single-port Structure (싱글포트 구조에 기반한 어싱크로네스 의사 듀얼 포트 SRAM 설계)

  • 최정희;손기정;김성식;조경록
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.41 no.10
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    • pp.23-29
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    • 2004
  • In this paper, the asynchronous quasi dual-port SRAM employing a single port structure in SRAM embedded SOC (System On Chip) is proposed. External host can access the internal SRAM freely and the data on internal SRAM can be transferred to an another external circuitry without a synchronous signal of an external host, which operates as an asynchronous dual-port SRRAH The performances of the proposed circuits and control structure are verified through the simulation and we fabricated it using a 0.35um CMOS technology. As the results, the chip shows reduced area about 20% and saved power also 20% than conventional architectures.

Performance Evaluation and Optimization of Dual-Port SDRAM Architecture for Mobile Embedded Systems (모바일 내장형 시스템을 위한 듀얼-포트SDRAM의 성능 평가 및 최적화)

  • Yang, Hoe-Seok;Kim, Sung-Chan;Park, Hae-Woo;Kim, Jin-Woo;Ha, Soon-Hoi
    • Journal of KIISE:Computing Practices and Letters
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    • v.14 no.5
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    • pp.542-546
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    • 2008
  • Recently dual-port SDRAM (DPSDRAM) architecture tailored for dual-processor based mobile embedded systems has been announced where a single memory chip plays the role of the local memories and the shared memory for both processors. In order to maintain memory consistency from simultaneous accesses of both ports, every access to the shared memory should be protected by a synchronization mechanism, which can result in substantial access latency. We propose two optimization techniques by exploiting the communication patterns of target applications: lock-priority scheme and static-copy scheme. Further, by dividing the shared bank into multiple blocks, we allow simultaneous accesses to different blocks thus achieve considerable performance gain. Experiments on a virtual prototyping system show a promising result - we could achieve about 20-50% performance gain compared to the base DPSDRAM architecture.

Compact Dual-Band MIMO Antenna with High Isolation Performance (소형 고 격리도 듀얼 밴드 MIMO 안테나)

  • Yeom, In-Su;Jung, Chang-Won
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.21 no.8
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    • pp.865-871
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    • 2010
  • A compact dual-band(IEEE 802.11b: 2.4~2.5 GHz, 11a: 5.15~5.825 GHz) 2-channel MIMO antenna for PMP applications is presented. The proposed antenna is composed of a planar inverted F-shape antenna(PIFA) operating at 2 GHz band and a loop antenna operating at 5 GHz band. The proposed antenna is orthogonally arranged at the edge of the ground plane for polarization and pattern diversities with excellent isolation characteristics. The two PIFA antennas operating 2 GHz have connecting line($\lambda_g$/4) face to the feed point for high isolation and low correlation at 2 GHz band. The two loop antennas connected each other in the bottom side to improve the isolation at 5 GHz band. The proposed antenna has a sufficient gain in WLAN service band and is compact sized for the portable media player (PMP) applications.

Design of Shared Memory Controller Device Driver in Embedded System (임베디드 시스템에서의 공유 메모리 컨트롤러 디바이스 드라이버 설계)

  • Moon, Ji-Hoon;Oh, Jae-Chul
    • The Journal of the Korea institute of electronic communication sciences
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    • v.9 no.6
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    • pp.703-709
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    • 2014
  • In the AMP(Asymmetric Multiprocessing) based dual core using core-specific operating system in a single processor system, shared memory method is used to send data between processors in dual core. To used shared memory in different operating systems, there is a problem of needing to solving the issue of message communication and synchronization between the two operations systems. In this paper, separate memory controller was used for data sharing between different processor cores in dual core environment. This controller can designate two slave ports to allow simultaneous access from two processors, and in the case of process data simultaneously by two processors, priority order of slave ports is determined through memory mediator. When sending data from A to B processor, SRAM area was logically separated into 8 pages. It allowed using memory area from multiple processes with the size of 4KByte per page, and control register with the size of 4Byte was used to discern the usability of current page.

Controller design for Hybrid ESS using dual core DSP TMS320F28377D (하이브리드 ESS을 위한 듀얼코어 DSP TMS320F28377D기반 제어기 설계)

  • Kim, Sang-jin;Kwon, Min-ho;Choi, Se-wan;Hwang, Dong-ok;Lee, Dong-ju;Paik, Seok-min
    • Proceedings of the KIPE Conference
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    • 2015.11a
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    • pp.159-160
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    • 2015
  • 최근 초기 투자비용은 큰 반면 에너지 이용률은 낮은 UPS(Uninterruptible power supply)를 ESS(Energy storage system)로서 활용하는 하이브리드 ESS에 대한 관심이 커지고 있다. 하이브리드ESS는 비상시 중요부하에 공급할 최소 전력을 제외한 전력을 수요관리로 활용함으로써 UPS에 저장되어 있는 에너지를 비상전원 기능과 수요관리 기능으로 폭넓게 사용할 수 있는 시스템이다. 이 시스템을 구성하는 3개의 PCS를 통합 제어하기 위해 채택한 듀얼코어 기반의 고성능 MCU TMS320F28377D를 이용하면 많은 PWM, ADC포트는 물론 충분한 연산시간 확보가 가능하다. 본 논문에서는 제안하는 하이브리드 ESS의 구성에 대해 소개하고 사용된 제어기의 구조, 각 PCS들을 통합 제어하기 위해 사용한 듀얼코어 기반의 DSP TMS320F28377D에 대해 설명하고자 한다.

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A Real-time Architecture for Viterbi Scoring in HMM-Based Isolated word recognition systems (HMM을 이용한 고립 단어 인신 시스템에서의 Viterbi Scoring을 위한 실시간 VLSI 구조)

  • 윤순영;이황수
    • The Journal of the Acoustical Society of Korea
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    • v.10 no.6
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    • pp.64-70
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    • 1991
  • 본논문에서는 Hidden Markov Model 에 기초한 실시간 고립 단어 인식 시스템에서의 Viterbi 알 고리듬을 위한 전용 VLSI 구조를 제안하였다. 제안된 구조는 듀얼포트 레지스터 파일로 입출력 부하를 줄이고 가산-최소/최대 연산부의 병렬 연산 구조를 이용하여 실시간 동작이 가능하도록 설계되었다. 모 델 인자와 상태 변수의 값에 태그들을 덧붙임으로써 이 구조는 대표적인 HMM 구조들을 쉽게 구현할 수 있다.

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A Parallel Structure of SRAMs in embedded DRAMs for Testability (테스트 용이화를 위한 임베디드 DRAM 내 SRAM의 병열 구조)

  • Gook, In-Sung;Lee, Jae-Min
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.3 no.3
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    • pp.3-7
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    • 2010
  • As the distance between signal lines in memories of high density ICs like SoCs decreases rapidly, failure occurs more frequently and effective memory test techniques are needed. In this paper, a new SRAM structure is proposed to decrease test complexity and test time for embedded DRAMs. In the presented technique, because memory test can be handled as a single port testing and read-write operation is possible at dual port without high complexity, test time can be much reduced.

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Design of a 32-Bit eFuse OTP Memory for PMICs (PMIC용 32bit eFuse OTP 설계)

  • Kim, Min-Sung;Yoon, Keon-Soo;Jang, Ji-Hye;Jin, Liyan;Ha, Pan-Bong;Kim, Young-Hee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.15 no.10
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    • pp.2209-2216
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    • 2011
  • In this paper, we design a 32-bit eFuse OTP memory for PMICs using MagnaChip's $0.18{\mu}m$ process. We solve a problem of an electrical shortage between an eFuse link and the VSS of a p-substrate in programming by placing an n-well under the eFuse link. Also, we propose a WL driver circuit which activates the RWL (read word-line) or WWL (write word-line) of a dual-port eFuse OTP memory cell selectively when a decoded WERP (WL enable for read or program) signal is inputted to the eFuse OTP memory directly. Furthermore, we reduce the layout area of the control circuit by removing a delay chain in the BL precharging circuit. We'can obtain an yield of 100% at a program voltage of 5.5V on 94 manufactured sample dies when measured with memory tester equipment.

Design of a redundancy control circuit for 1T-SRAM repair using electrical fuse programming (전기적 퓨즈 프로그래밍을 이용한 1T-SRAM 리페어용 리던던시 제어 회로 설계)

  • Lee, Jae-Hyung;Jeon, Hwang-Gon;Kim, Kwang-Il;Kim, Ki-Jong;Yu, Yi-Ning;Ha, Pan-Bong;Kim, Young-Hee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.14 no.8
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    • pp.1877-1886
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    • 2010
  • In this paper, we design a redundancy control circuit for 1T-SRAM repair using electrical fuse programming. We propose a dual port eFuse cell to provide high program power to the eFuse and to reduce the read current of the cell by using an external program supply voltage when the supply power is low. The proposed dual port eFuse cell is designed to store its programmed datum into a D-latch automatically in the power-on read mode. The layout area of an address comparison circuit which compares a memory repair address with a memory access address is reduced approximately 19% by using dynamic pseudo NMOS logic instead of CMOS logic. Also, the layout size of the designed redundancy control circuit for 1T-SRAM repair using electrical fuse programming with Dongbu HiTek's $0.11{\mu}m$ mixed signal process is $249.02 {\times}225.04{\mu}m^{2}$.