• Applied Chemistry for Engineering
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• v.26 no.2
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• pp.205-209
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• 2015

CCU (Carbon Capture & Utilization) has a potential technology for the reduction and usage of carbon dioxide which is greenhouse gas emitting from a fossil fuel buring. To decompose the carbon dioxide, a three phase gliding arc plasma-catalytic reactor was designed and manufactured. Experiments of carbon dioxide reduction was performed by varying the gas flow rate with feeding the $CO_2$ only as well as the input power, the catalyst type and steam supply with respect to the injection of the mixture of $CO_2$ and $CH_4$. The $CO_2$ decomposition rate was 7.9% and the energy efficiency was $0.0013L/min{\cdot}W$ at a $CO_2$ flow rate of 12 L/min only. Carbon monoxide and oxygen was generated in accordance with the destruction of carbon dioxide. When the injection ratio of $CH_4/CO_2$ reached 1.29, the $CO_2$ destruction and $CH_4$ conversion rates were 37.8% and 56.6% respectively at a power supply of 0.76 kW. During the installation of $NiO/Al_2O_3$ catalyst bed, the $CO_2$ destruction and $CH_4$ conversion rates were 11.5% and 9.9% respectively. The steam supply parameter do not have any significant effects on the carbon dioxide decomposition.

• Journal of the Microelectronics and Packaging Society
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• v.18 no.4
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• pp.11-18
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• 2011

The quantitative interfacial adhesion energy of the Cu-Cu direct bonding layers was evaluated in terms of the bonding temperature and Ar+$H_2$ plasma treatment on Cu surface by using a 4-point bending test. The interfacial adhesion energy and bonding quality depend on increased bonding temperature and post-annealing temperature. With increasing bonding temperature from $250^{\circ}C$ to $350^{\circ}C$, the interfacial adhesion energy increase from $1.38{\pm}1.06$ $J/m^2$ to $10.36{\pm}1.01$ $J/m^2$. The Ar+$H_2$ plasma treatment on Cu surface drastically increase the interfacial adhesion energy form $1.38{\pm}1.06$ $J/m^2$ to $6.59{\pm}0.03$ $J/m^2$. The plasma pre-treatment successfully reduces processing temperature of Cu to Cu direct bonding.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.3
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• pp.116-120
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• 2006

We have investigated plasma spray coated $Al_2O_3$ layers on Al-60 series substrates for development of wafer electrostatic chuck in semiconductor dry etching system. Samples were prepared without/with cooling bar on backside of samples, at various distances, and with different powder feed rates. There were many cracks and pores in the $Al_2O_3$ layers coated on Al-60 series substrates without cooling bar on the backside of samples. But the cracks and pores were almost disappeared in the $Al_2O_3$ layers on Al-60 series substrates coated with cooling bar on the back side of samples, 15 g/min. powder feed rate and various 60, 70, 80 mm working distances. Then the surface morphology was not changed with various working distances of 60, 70, 80 mm. When the powder feed rate was changed from 15 g/min to 20 g/min, the crack did not appear, but few pores appeared. Also the $Al_2O_3$ layer was coated with many small splats compared with $Al_2O_3$ layer coated with 15 g/min powder feed rate. The deposited rate of $Al_2O_3$ layer was higher when the process was done without cooling bar on the back side of sample than that with cooling bar on the back side of sample.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.4
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• pp.176-181
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• 2003

Rapid densification of a SiC powder with additive 0.5 wt% $B_4$C was conducted by spark plasma sintering (SPS). The unique features of the process are the possibilities of using very fast heating rate and short holding time to obtain fully dense materials. The heating rate and applied pressure were kept to be $100^{\circ}C$/min and 40 MPa, while sintering temperature and soaking time varied to 1800, 1850, 1900 and $1950^{\circ}C$ and 10, 20 and 30 min, respectively. All of the SPS-sintered specimens at $1950^{\circ}C$ reached near-theoretical density. The XRD found that 3C-to-6H transformation at $1850^{\circ}C$. The microstructures of the rapidly densified SiC ceramics consisted of duplex microstructure with ultrafine equiaxed grains under 2 $\mu\textrm{m}$ and elongated grains of 0.5∼2 $\mu\textrm{m}$ wide, length 3∼10 $\mu\textrm{m}$. The biaxial strength increased with the increase of sintering time. Strength of 392.7 MPa was obtained with the fully densified specimen sintered at $1950^{\circ}C$ for 30 min, in agreement with the general tendency that strength increases with decreases pore. On the other hand, the fracture toughness shows the value of 2.17∼2.34 MPa$.$$m^{1/2}$ which might be due to the transgranular fracture mode.

• Journal of the Korean Vacuum Society
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• v.15 no.6
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• pp.630-636
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• 2006

Scale down of semiconductor gate pattern will make progress centrally line width into transistor according to the high integration and high density of flash memory semiconductor. Recently, the many researchers are in the process of developing research for using the ONO(oxide-nitride-oxide) technology for the gate pattern give body to line breadth of less 100 nm. Therefore, etch rate and etch profile of the line width detail of less 100 nm affect important factor in a semiconductor process. In case of increasing of the platen power up to 50 W at the ICP etcher, etch rate and PR selectivity showed good result when the platen power of ICP etcher has 100 W. Also, in case of changing of HBr gas flux at the platen power of 100 W, etch rate was decreasing and PR selectivity is increasing. We founded terms that have etch rate 320 nm/min, PR selectivity 3.5:1 and etch slope have vertical in the case of giving the platen power 100 W and HBr gas 35 sccm at the ICP etcher. Also notch was not formed.

• Journal of Adhesion and Interface
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• v.20 no.1
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• pp.1-8
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• 2019

Fabrication of monolayer is important method for enhancing physical and chemical characteristics such as light shielding and antireflection while maintaining thin film properties. In previous studies, monolayers were fabricated by various methods on small substrates, but processes were complicated and difficult to form monolayers with large area. We used rod coating equipment with a small amount of coating liquid to form a HCP (hexagonal closed packing) coating of PMMA beads on PET(poly(ethylene terephthalate)) substrate with $20cm{\times}20cm$ size. We observed that changes in morphologies of monolayers by using the solvents with different boiling points and vapor pressures, by adapting surfactants on particles and by applying plasma treatment on substrates. The coverage was increased by 20% by optimizing the coating conditions including meniscus of beads, control of the attraction - repulsion forces and surface energy. This result can potentially be applied to optical films and sensors because it is possible to make a uniform and large-scale monolayer in a simple and rapid manner when it is compared to the methods in previous studies.

• Clean Technology
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• v.16 no.3
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• pp.191-197
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• 2010

Repair reaction of plasma damaged porous methyl doped SiOCH films was carried out with silylation agents dissolved in supercritical carbon dioxide ($scCO_2$) at various reaction time, pressure, and temperature. While a decrease in the characteristic bands at $3150{\sim}3560cm^{-1}$ was detectable, the difference of methyl peaks was not identified apparently in the FT-IR spectra. The surface hydrophobicity was rapidly recovered by the silylation. In order to induce effective repair in bulk phase, the wafer was heat treated before reaction under vacuum or ambient condition. The contact angle was slightly increased after the treatment and completely recovered after the subsequent silylation. Methyl groups were decreased after the plasma damage, but their recovery was not identified apparently from the FT-IR, spectroscopic ellipsometry, and secondary ion mass spectroscopy analyses. Furthermore, Ti evaporator was performed in a vacuum chamber to evaluate the pore sealing effect. The GDS analysis revealed that the open pores in the plasma damaged films were efficiently sealed with the silylation in $scCO_2$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.1
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• pp.5-10
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• 2012

In general, the fabrications of the LEDs with mesa structure are performed grown by MOCVD method. In order to etch and separate each chips, the LEDs are passed the RIE and scribing processes. The RIE process using plasma dry etching occur some problems such as defects, dislocations and the formation of dangling bond in surface result in decline of device characteristic. The SAG method has attracted considerable interest for the growth of high quality GaN epi layer on the sapphire substrate. In this paper, the SAG method was introduced for simplification and fabrication of the high quality epi layer. And we report that the size of selective area do not affect the characteristics of original LED. The diameter of SAG circle patterns were choose as 2500, 1000, 350, and 200 ${\mu}m$. The SAG-LEDs were measured to obtain the device characteristics using by SEM, EL and I-V. The main emission peaks of 2500, 1000, 350, and 200 ${\mu}m$ were 485, 480, 450, and 445 nm respectively. The chips of 350, 200 ${\mu}m$ diameter were observed non-uniform surface and resistance was higher than original LED, however, the chips of 2500, 1000 ${\mu}m$ diameter had uniform surface and current-voltage characteristics were better than small sizes. Therefore, we suggest that the suitable diameter which do not affect the characteristic of original LED is more than 1000 ${\mu}m$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.5
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• pp.300-305
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• 2015

$WO_3$, $SiO_2$, and $TiO_2$ films with hydrophilic property are deposited by rf-magnetron sputtering. Their wettability is strongly depends on the presence or absence of the oxygen plasma etching on the glass substrates. The $TiO_2$ film of 50 nm-thick on the plasma etched glass shows a water contact angle (WCA) below $5^{\circ}$ which means a super-hydrophilic surface. However, WCA values are gradually degraded when the films are exposed under atmosphere, especially $WO_3$. In order to improve hydrophilic property, the degraded films can be again recovered by UV illumination for 10 sec using UV-light and the $TiO_2$ film shows a super-hydrophilic surface about $3^{\circ}$.

• Journal of Environmental Science International
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• v.23 no.3
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• pp.359-368
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• 2014

The aim of our research was to apply experimental design methodology in the optimization of N, N-Dimethyl-4-nitrosoaniline (RNO, which is indictor of OH radical formation) degradation using gas mixing-circulation plasma process. The reaction was mathematically described as a function of four independent variables [voltage ($X_1$), gas flow rate ($X_2$), liquid flow rate ($X_3$) and time ($X_4$)] being modeled by the use of the central composite design (CCD). RNO removal efficiency was evaluated using a second-order polynomial multiple regression model. Analysis of variance (ANOVA) showed a high coefficient of determination ($R^2$) value of 0.9111, thus ensuring a satisfactory adjustment of the second-order polynomial multiple regression model with the experimental data. The application of response surface methodology (RSM) yielded the following regression equation, which is an empirical relationship between the RNO removal efficiency and independent variables in a coded unit: RNO removal efficiency (%) = $77.71+10.04X_1+10.72X_2+1.78X_3+17.66X_4+5.91X_1X_2+3.64X_2X_3-8.72X_2X_4-7.80X{_1}^2-6.49X{_2}^2-5.67X{_4}^2$. Maximum RNO removal efficiency was predicted and experimentally validated. The optimum voltage, air flow rate, liquid flow rate and time were obtained for the highest desirability at 117.99 V, 4.88 L/min, 6.27 L/min and 24.65 min, respectively. Under optimal value of process parameters, high removal(> 97 %) was obtained for RNO.