The characteristic of InGaN/GaN MQW LED by different diameter in selective area growth method
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Bae, Seon-Min
(Department of Applied Sciences, Korea Maritime University)
Jeon, Hun-Soo (Department of Applied Sciences, Korea Maritime University) Lee, Gang-Seok (Department of Applied Sciences, Korea Maritime University) Jung, Se-Gyo (Department of Applied Sciences, Korea Maritime University) Yoon, Wi-Il (Department of Applied Sciences, Korea Maritime University) Kim, Kyoung-Hwa (Department of Applied Sciences, Korea Maritime University) Yang, Min (Department of Applied Sciences, Korea Maritime University) Yi, Sam-Nyung (Department of Applied Sciences, Korea Maritime University) Ahn, Hyung-Soo (Department of Applied Sciences, Korea Maritime University) Kim, Suck-Whan (Department of Physics, Andong National University) Yu, Young-Moon (Pukyong National University LED-Marine Convergence Technology R&BD Center) Ha, Hong-Ju (CS Solution Co., Ltd.) |
1 | K. Hiramatsu, K. Nishiyama, M. Onishi, H. Mizutani, M. Narukawa, A. Motogaito, H. Miyake, Y. Iyechika and T. Maeda, "Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO)", Journal of Crystal Growth 221 (2000) 316. DOI ScienceOn |
2 | P.G. Eliseeev, P. Perlin, J. Lee and M. Osinski, "Blue temperature-induced shift and band-tail emission in InGaN-based light sources", Applied Physics Letter 71 (1997) 569. DOI ScienceOn |
3 | Y.H. Cho, G.H. Gainer, A.J. Fisher, J.J. Song, S. Keller, U.K. Mishra and S.P. DenBaars, "S-shaped temperaturedependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells", Applied Physics Letter 73 (1998) 1370. DOI ScienceOn |
4 | C.H. Qiu, C. Hoggatt, W. Melton, M.W. Leksono and J.I. Pankove, "Study of defect state in GaN films by photoconductivity measurement", Applied Physics Letter 66 (1995) 2712. DOI ScienceOn |
5 | B. Beaumont, S. Haffouz, P. Gibart, M. Leroux, Ph. Lorenzini, E. Calleja and E. Munoz, "Violet GaN based light emitting diodes fabricated by metal organics vapour phase epitaxy", Materials Science and Engineering: B 50 (1997) 296. DOI ScienceOn |
6 | C. Wetzel, M. Zhu, J. Senawiratne, T. Detchprohm, P. D. Persans, L. Lin, E.A. Preble and D. Hanser, "Lightemitting diode development on polar and non-polar GaN substrates", Journal of Crystal Growth 310 (2008) 3987. DOI ScienceOn |
7 | R.J. Shul, L. Zhang, A.G. Baca, C.G. Willison, J. Han, S.J. Pearton, F. Ren, J.C. Zolper and L.F. Lester, "Highdensity plasma-induced etch damage of GaN", Materials Research Society 573 (2000) 271. |
8 | J. Tourret. O. Gourmala, Y. Andre, A. Trassoudaine, E. Gil, D. Castelluci and R. Cadoret, "A complete crystallographic study of GaN epitaxial morphologies in selective area growth by hydride vapour phase epitaxy (SAG-HVPE)", Journal of Crystal Growth 311 (2009) 1460. DOI ScienceOn |
9 | H.Y. Shin, S.K. Kwon, Y.I. Chang, M.J. Cho and K.H. Park, "Reducing dislocation density in GaN films using a cone-shaped patterned sapphire substrate", Journal of Crystal Growth 311 (2009) 4167. DOI ScienceOn |
10 | Y. Cordier, F. Semond, J.C. Moreno, E. Fragssinet, B. Benbakhti, Z. Cao, S. Chenot, L. Nguyen, O. Tottereau, A. Soltani and K. Blary, "Selective area growth of GaNbased structures by molecular beam epitaxy on micrometer and nanometer size patterns", Materials Science in Semiconductor Processing 12 (2009) 16. DOI ScienceOn |
11 | X.J. Chen, J.S. Hwang, G.P. Merceroz, S. Landis, B. Martin, D.L.S. Dang, J. Eymery and C. Durand, "Waferscale selective area growth of GaN hexagonal prismatic nanostructures on c-sapphire substrate", Journal of Crystal Growth 322 (2011) 15. DOI ScienceOn |
12 | K. Hiruma, T. Haga, K. Kapolnek, A.C. Abara, H. Masui, L.A. Coldren, U.K. Mishra and S.P. DenBaars, "Surface migration and reaction mechanism during selective growth of GaAs and AlAs by metalorganic chemical vapor deposition", Journal of Crystal Growth 102 (1990) 717. DOI ScienceOn |
13 | T.S. Oh, K.J. Lee and K.Y. Lim, "Selective area growth and properties of truncated-pyramid InGaN/GaN MQW structure on Si(111) substrate with various filling ratios", Journal of the Korean Physical Society 49 (2006) S745. |
14 | Y.S. Wang, N.C. Chen, C.Y. Lu and J.F. Chen, "Optical joint density of states in InGaN/GaN based multiplequantum-well light-emitting diodes", Physica B: Condensed Matter 406 (2011) 4300. DOI ScienceOn |
15 | J.C. Wang, C.H. Fang, Y.F. Wu, W.J. Chen, D.C. Kuo, P.L. Fan, J.A. Jiang and T.E. Nee, "The effect of junction temperature on the optoelectrical properties of InGaN/GaN multiple quantum well light-emitting diodes", Journal of Luminescence 132 (2012) 429. DOI ScienceOn |
16 | H.C. Lee, J.B. Park, J.W. Bae, P.T.T. Thuny, M.C. Yoo and G.Y. Yeom, "Effect of the surface texturing shapes fabricated using dry etching on the extraction efficiency of vertical light-emitting diodes", Solid-State Electronics 52 (2008) 1193. DOI ScienceOn |
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