• Journal of the Korean Vacuum Society
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• v.14 no.2
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• pp.91-96
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• 2005

The silicon-on-insulator (SOI) wafer fabrication technique has been developed by using ion-cut process, based on proton implantation and wafer bonding techniques. It has been shown by SRIM simulation that 65keV proton implantation is required for a SOI wafer (200nm SOI, 400nm BOX) fabrication. In order to investigate the optimum proton dose and primary annealing condition for wafer splitting, the surface morphologic change has been observed such as blistering and flaking. As a result, effective dose is found to be in the $6\~9\times10^{16}\;H^+/cm^2$ range, and the annealing at $550^{\circ}C$ for 30 minutes is expected to be optimum for wafer splitting. Direct wafer bonding is performed by joining two wafers together after creating hydrophilic surfaces by a modified RCA cleaning, and IR inspection is followed to ensure a void free bonding. The wafer splitting was accomplished by annealing at the predetermined optimum condition, and high temperature annealing was then performed at $1,100^{\circ}C$ for 60 minutes to stabilize the bonding interface. TEM observation revealed no detectable defect at the SOI structure, and the interface trap charge density at the upper interface of the BOX was measured to be low enough to keep 'thermal' quality.

• Journal of the Korean Vacuum Society
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• v.2 no.2
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• pp.188-198
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• 1993

We have developed a technique for growing thin oxides (6~10 nm) by the Last step TCA method. N-channel metal-oxide-semiconductor (n-MOS) capacitor and n-channel metal-oxide-semiconductor field-effect transistor's (MOSFET's) having a gate oxide with chlorine incorporated $SiO_2/Si$ interface have been analyzed by electrical measurements and physical methods, such as secondary ion mass spectrometry (SIMS) and electron spectroscopy for chemical analysis (ESCA). The gate oxide grown with the Last strp TCA method has good characteristics as follows: the electron mobility of the MOSFET's with the Last step TCA method was increased by about 7% and the defect density at the $SiO_2/Si$ interface decreases slightly compared with that with No TCA method. In reliability estimation, the breakdown field was 18 MV/cm, 0.6 MV/cm higher than that of the gate oxide with No TCA method, and the lifetime estimated by TDDB measurement was longer than 20 years. The device lifetime estimated from hot-carrier reliability was proven to be enhanced. As the results, the gate oxide having a $SiO_2/Si$ interface incorporated with chlorine has good characteristics. Our new technique of Last step TCA method may be used to improve the endurance and retention of MOSFET's and to alleviate the degradation of thin oxides in short-channel MOS devices.

• Economic and Environmental Geology
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• v.38 no.2 s.171
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• pp.143-153
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• 2005

Euiseong subbasin, included in the Kyungsang Basin, was created by the result of volcanic activity in the late Cretaceous, and contacts with Milyang and Youngyang subbasins by Palgongsan and Andong faults, respectively. In this study, geophysical survey is implemented fur investigating surface and subsurface geologic structure in Euiseong subbasin which composed with the complex of volcanic and plutonic rocks. To understand surface geologic feature, IRS satellite image and DEM(Digital Terrain Map) are used for analyzing lineament and its density. The numbers of lineaments show major trend in $N55^{\circ}\~65^{\circ}W$, and aspects of lineament lengths show major trend in $N55^{\circ}\~65^{\circ}W$ and N-S directions. 13 delineate subsurface density discontinuity; Power spectrum analysis was implemented for gravity anomaly data, resulting $4-5{\cal}km$ depth of basin basement and $0.5-0.6{\cal}km$ depth of shallow discontinuity. From the result of power spectrum analysis, 2.5-D modelings were implemented along two profiles of A-A' and B-B', and they show subsurface geology in detail. Analytic signal method for detecting boundaries of magnetic basements show 0.001-130 nT/m values, and high energy area show good correspondency with the boundaries of Palgongsan granite and caldera areas in Euiseong subbasin.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.21-24
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• 2004

Pseudo-MOSFET의 제작을 위해서는 표면 실리콘 층의 식각 공정이 필요하며, 공정의 간편성으로 인해 주로 RIE(Reactive Ion Etching)를 사용하고 있다. 하지만, RE 공정 도중 발생하는 Plasma에 의해서 SOI 층이 손상을 받게 되고 이 영향으로 소자의 특성이 열화 될 가능성이 있다. 이러한 특성의 열화를 확인하기 위하여 소자 제작을 위한 표면 실리콘 층의 식각을 RIE 공정과 TMAH 용액을 이용한 습식 식각을 각각 행하여 그 특성을 비교한 결과, 건식 식각된 시편에서 계면상태 밀도의 증가, 이동도의 감소 등 특성 열화 현상이 현저히 나타났다. 이러한 RIE 공정 중 발생하는 손상을 제거하기 위하여 저온 열처리를 하였으며 그 결과 $400^{\circ}C$ $N_2$ 분위기에서 4시간 동안 열처리를 하여 습식 식각된 시편과 동일한 특성을 가지게 할 수 있었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.141-141
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• 2012

X-선 반사율 측정법(XRR)은 비파괴적인 측정방법과 수 nm의 두께를 정밀하게 측정할 수 있는 장점으로 인하여 반도체 산업현장에서 많은 관심과 연구가 이루어지고 있다. 이러한 XRR은 두께 분석 측정의 정밀도를 향상시키고 부정확한 결과를 방지하기 위하여 측정기기를 검증하고 보정할 수 있는 두께 표준물질을 필요로 하고 있다. 본 연구에서는 XRR용 두께 표준물질을 이온빔 스퍼터링 증착방법을 이용하여 제작하였다. 두께 표준물질 제작에 있어 공기 중 노출에 의해 산화가 되지 않는 산화물 박막과 산화물 기판을 선택하였다. 후보물질은 glass, sapphire, quartz, SiO2기판과 HfO2, Ta2O5, Cr2O3 산화물 타켓을 이용하여 박막을 제작하였다. 제작된 후 보물질은 교정된 XRR을 통하여 박막의 두께, 계면 및 표면 거칠기, 밀도등 박막의 구조특성분석을 하였다. Glass, quartz의 경우 기판 표면 거칠기가 좋지 않아 제작된 샘플의 X-선 반사율 곡선이 급격히 떨어지면서 측정되는 각도의 영역이 작아졌다. Sapphire로 제작한 시편은 측정된 데이터와 simulation의 curve fitting이 양호하지 않았다. 이 중 SiO2기판을 사용하고 HfO2박막을 증착한 샘플이 다른 후보물질보다 XRR curve fitting 결과가 가장 양호하여 두께 표준물질로 응용하기에 적절하였다. 그리고 AFM (Atomic Force MicroScope)을 이용하여 기판의 거칠기 및 증착한 박막표면 거칠기 측정을 하였고, TEM (Transmission Electron Microscope)으로 두께 측정을 하여 XRR로 얻은 데이터와 비교하였다. 이러한 결과를 토대로 XRR용 두께 표준물질 제작할 수 있었고, 추후 불확도 평가 및 비교실험을 통하여 제작된 XRR용 두께 표준물질을 이용할 수 있을 것으로 기대된다.

• Journal of Adhesion and Interface
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• v.21 no.3
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• pp.86-92
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• 2020

We confirmed the effects on the device performances and the charge injection characteristics of organic field-effect transistor (OFET) by selectively differently controlling the surface energies on the contact region of the substrate where the source/drain electrodes are located and the channel region between the two electrodes. When the surface energies of the channel and contact regions were kept low and increased, respectively, the field-effect mobility of the OFET devices was 0.063 ㎠/V·s, the contact resistance was 132.2 kΩ·cm, and the subthreshold swing was 0.6 V/dec. They are the results of twice and 30 times improvements compared to the pristine FET device, respectively. As the results of analyzing the interfacial trap density according to the channel length, a major reason of the improved device performances could be anticipated that the pi-pi overlapping direction of polymer semiconductor molecules and the charge injection pathway from electrode is coincided by selective surface treatment in the contact region, which finally induces the decreases of the charge trap density in the polymer semiconducting film. The selective surface treatment method for the contact region between the electrode and the polymer semiconductor used in this study has the potential to maximize the electrical performances of organic electronics by being utilized with various existing processes to lower the interface resistance.

• Transactions of the Korean Society of Mechanical Engineers
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• v.15 no.6
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• pp.2002-2014
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• 1991

A refined two-dimensional analysis method, taking into account the crack opening deformation, is proposed for the evaluation of stress distributions in transverse cracked cross-ply laminates. The interlaminar stresses which play an important role in laminate failure are evaluated using the concept of interface layer. A series expansion of the displacements is employed and the thermal residual stresses and Poisson's effects in the laminated are taken into consideration in the formulation. The stress distributions are compared with finite element results. The proposed method represents well the characteristics of the stress distributions. The through-the-thickness variation of the stress distribution is remarkable near the transverse crack due to the crack opening deformation. The interlaminar stresses have significant values at the transverse crack tip and the proposed analysis can be applied as a basis for the prediction of the induced delamination onset by using appropriate failure criteria.

• Applied Chemistry for Engineering
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• v.28 no.5
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• pp.513-520
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• 2017

The application possibility of an alternative new method with low energy consumption was studied for the eco-friendly fabrication of foamed glasses from waste glasses. As a result, fabricating temperature can be reduced under $300^{\circ}C$ without using various expensive inorganic oxidants. The foamed glass can be fabricated at a proper mixing ratio of the waste glass powder, water glass, little surfactant and bubble stabilizer by induction heating method. In the experimental range, the assured optimal condition is 4 min heating on the induction machine with a steel-container ($100mm{\times}100mm{\times}20mm$) and followed by evaporating and drying process for 11 min with 110 g of glass powder, 80 g of water glass, 3 g of surfactant and 0.2 g of bubble stabilizer. When the foamed glass was fabricated at the optimal condition, the density of the glass was $0.85g/cm^3$ and the heat conduction was $0.052W/h{\cdot}K$. In addition, the compressive strength of the glass was above $50kg/cm^2$.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2001.10a
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• pp.724-728
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• 2001

In this study, the dielectric breakdown of epoxy composites used for transformers was experimented and then its data were simulated by Weibull distribution probability. The dielectric breakdown characteristics origin in epoxy composites were examined and various effects of dielectric breakdown on epoxy composites were also discussed. As a result, first of all, speaking of dielectric breakdown properties, the more hardener increased the stronger breakdown strength at low temperature because of cross-linked density by the virtue of ester radical. And the breakdown strength of specimens with filler was lower than it of non-filler specimens because it is believed that the adding filler forms interface and charge is accumulated in it, therefore the molecular motility is raised, the electric field is concentrated, and the acceleration of electron and the growth of electron avalanche are early accomplished. In the case of filled specimens with treating silane, the breakdown strength become much higher since this suggests that silane coupling agent improves interfacial combination and relaxs electric field concentration. Finally, from the analysis of weibull distribution, it was confirmed that as the allowed breakdown probability was given by 0.1%, the applied field value needed to be under 21.5㎹/cm.

• Elastomers and Composites
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• v.36 no.3
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• pp.195-200
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• 2001

Ultraviolet photografting of acrylic acid onto low density polyethylene was characterized using XPS and contact angle measurement. Effects of surface modification at LDPE and aluminum on LDPE/Al laminate were also investigated. Contact angle decreased significantly at initial state arid tends to level off with increasing UV irradiation time. The improvement of hydrophilicity was due to the presence of acrylic acid on LDPE surface. Graft of acrylic acid onto LDPE was also identified from O1s/C1s ratios in XPS spectrum. Adhesion strength of LDPE-g-AAc/Al laminate showed about 30 times higher than LDPE/A1 system and it could be attributed to the increase of polarity of LDPE surface. Chemical treatment of Al surface using sulfuric acid/sodium dichromate also increased the adhesion strength of LDPE/Al laminate. Adhesion strength of LDPE/Al laminate decreased significantly under acetic acid.