• The Journal of the Korea institute of electronic communication sciences
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• v.8 no.11
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• pp.1633-1640
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• 2013

In this paper, noise parameters for high frequency modeling of dual-gate FET are extracted and analyzed. To extract thermal noise parameter of dual gate, noise characteristics are measured by changing input impedance of noise source using Tuner, and the influence of pad parasitic elements are subtracted using open and short dummy structure. Measured results indicated that the dual-gate FET is improved the noise figure by 0.2dB compared with conventional cascode structure FET at 5GHz, and it confirmed that the noise figure has dropped due to reduction of capacitances between the drain and source, gate and drain by simulation and analysis of small-signal parameters.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2010.05a
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• pp.250-253
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• 2010

Underwater sensor network has attracted more and more attention from the networking research community recently. Most of traditional studies focus on the topology with a single gateway. Underwater sensor network consists of a variable number of sensors and multi-gateway to ensure the reliability of the network. In this paper, we propose a new MAC protocol that can reduce collisions among sensor nodes and improve QoS(Quality of Service) for underwater sensor network with multi-gateway. We evaluate the performance of the proposed scheme through simulation. Simulation results show that the proposed scheme outperforms the existing MAC protocol.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2016.10a
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• pp.611-613
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• 2016

The characteristics of tunnel field-effect transistor(TFET) structure with source-overlapped gate was investigated using a TCAD simulations. Tunneling is mostly divided into line-tunneling and point-tunneling, and line-tunneling is higher performance than point-tunneling in terms of subthreshold swing(SS) and on-current. In this paper, from the simulation results of source-overlapped gate length effects at silicon(Si), germanium(Ge), Si-Ge hetero TFET structure, the guideline of optimal structure with highest performance are proposed.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2019.05a
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• pp.257-259
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• 2019

We have investigated the electrical coupling in a 3D monolithic NOR gate structure using TCAD simulation. The electrical coupling of 3D monolithic NOR gate can be caused by the transistor located in the upper/lower or diagonal transistors. The drain current of the upper layer NMOSFET is the same when the voltage of PgateB is 0 V and 1 V. It has been confirmed that the electrical coupling in the diagonal direction does not affect the device characteristics.

• Journal of IKEEE
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• v.25 no.1
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• pp.15-24
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• 2021

In this paper, 1700 V EPDT (Extended P+ shielding floating gate Double Trench) MOSFET structure, which has a smaller switching time and loss than CDT (Conventional Double Trench) MOSFET, is proposed. The proposed EPDT MOSFET structure extended the P+ shielding area of the source trench in the CDT MOSFET structure and divided the gate into N+ and floating P- polysilicon gate. By comparing the two structures through Sentaurus TCAD simulation, the on-resistance was almost unchanged, but Crss (Gate-Drain Capacitance) decreased by 32.54 % and 65.5 %, when 0 V and 7 V was applied to the gate respectively. Therefore, the switching time and loss were reduced by 45 %, 32.6 % respectively, which shows that switching performance was greatly improved.

• Proceeding of EDISON Challenge
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• 2017.03a
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• pp.448-452
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• 2017

단층 $MoS_2$와 단층 실리콘을 채널 물질로 사용한 TMD FET과 UTB FET의 소자 특성 분석 시뮬레이션을 진행하였다. TMD FET과 UTB FET의 채널과 oxide 두께를 변화시켜가며 각 각의 게이트 전압과 드레인 전류의 특성과 subthreshold swing 등을 분석하였으며, 채널과 oxide 두께가 얇을수록 단채널 효과가 줄어든다는 것을 알 수 있었다. 얇은 채널을 사용하는 트랜지스터의 최적 구동 조건은 채널과 oxide 층의 두께가 1 nm 정도 되어야 한다는 시뮬레이션 결과를 바탕으로 TMD FET과 UTB FET의 소자 특성을 상호 비교해 보았으며 TMD FET의 SS값이 더 좋다는 것을 확인할 수 있었다.

• Journal of the Korea Institute of Information Security & Cryptology
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• v.7 no.1
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• pp.45-56
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• 1997

본 논문에서는, 무선 통신시스템에 적용 가능한 (255,215) BCH부호의 효율적인 복호 알고리즘을 제안하고, 이를 이용하여 5중 에러 정정 부호기 및 복호기를 설계하였다. peterson의 복호기보다 곱셈기, X-or 게이트의 수가 현저히 줄어들었을 뿐만 아니라 역원계산기가 필요 없음이 입증되었고, VHDL을 사용한 컴퓨터 시뮬레이션을 통해서 그 타당성을 검증하였다.

• Journal of IKEEE
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• v.11 no.4
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• pp.158-164
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• 2007

In this study, three types of a novel Trench IGBTs(Insulated Gate Bipolar Transistor) are proposed. The first structure has P-collector which is isolated by $SiO_2$ layer to enhance anode-injection-efficiency and enable the device to have a low on-state voltage drop(Von). And the second structure has convex P-base region between both gates. This structure may be effective to distributes electric-field crowded to gate edge. So this structure can have higher breakdown voltage(BV) than conventional trench-type IGBT(TIGBT). The process and device simulation results show improved on-state, breakdown and switching characteristics in each structure. The first one was presented lower on state voltage drop(2.1V) than that of conventional one(2.4V). Also, second structurehas higher breakdown voltage(1220V) and faster turn off time(9ns) than that of conventional structure. Finally, the last one of the proposed structure has combined the two structure (the first one and second one). This structure has superior electric characteristics than conventional structure about forward voltage drop and blocking capability, turnoff characteristics.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.14 no.12
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• pp.6047-6052
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• 2013

A cosmetic manufacturing process requires a mold that is inevitable for mass production. Cosmetic containers are one of major factors affecting the customer's purchase decision. In addition, the manufacturing cost in cosmetic container comprises a large portion of the entire product cost. Therefore, a mold satisfying the economical feasibility, aesthetics and functionality is necessary. Among the cosmetic containers, square shape containers have a tendency of having a short shot defect product. The square shaped cosmetic containers are mostly produced as a side gate shape on the two-plate molds. On the other hand, there are two disadvantages, such as gate trace and post processing requirement. The overlap-gateproposed in this study has the characteristics of intaglio gate cutting and no need for post processing. The delivery system of the overlap gate was simulated and compared with the side gate via Moldflow. The improvement in flow, frozen rate, density, and Air trap was confirmed. Based on the simulation results, the mold and performed injection molding was fabricated. In this study, the possibility of the mass production of high aesthetic and functionality cosmetic containers was verified.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.1
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• pp.151-157
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• 2013

In this paper, a comparative analysis of PBTI induced device degradation in nanowire n-channel junctionless and inversion mode Multiple-Gate MOSFET(MuGFETs) has been performed. It has been observed that the threshold voltage is increased after PBTI stress and the threshold voltage variation of junctionless device is less significant than that of inversion mode device. However the degradation rate of junctionless device is less significant than that of inversion mode device. The activation energy of the device degradation is larger in inversion mode device than junctionless device. In order to analyze the more significant PBTI induced device degradation in inversion mode device than junctionless device, 3-dimensional device simulation has been performed. The electron concentration in inversion mode device is equal to the one in junctionless device but the electric field in inversion mode device is larger than junctionless device.