• Title/Summary/Keyword: 가변 이득증폭기

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A 65-nm CMOS Low-Power Baseband Circuit with 7-Channel Cutoff Frequency and 40-dB Gain Range for LTE-Advanced SAW-Less RF Transmitters (LTE-Advanced SAW-Less 송신기용 7개 채널 차단 주파수 및 40-dB 이득범위를 제공하는 65-nm CMOS 저전력 기저대역회로 설계에 관한 연구)

  • Kim, Sung-Hwan;Kim, Chang-Wan
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.17 no.3
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    • pp.678-684
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    • 2013
  • This paper describes a low-power baseband circuit for SAW-less LTE-Advanced transmitters. The proposed transmitter baseband circuit consists of a 2nd-order Tow-Thomas type active RC-LPF and a 1st-order passive RC LPF. It can provide a 7 multi-channel cut-off frequencies and wide gain control range of -41 dB ~ 0 dB with a 1-dB step. The proposed 2nd-order active RC-LPF adopts an op-amp in which three other sub-op amps are in parallel connected to reduce DC current for different cutoff frequency. In addition, each sub-op amp adopts both Miller and feed-forward phase compensation method to achieve an UGBW of more than 1-GHz with a small DC power consumption. The proposed baseband circuit is implemented in 65-nm CMOS technology, consuming DC power from 6.3 mW to 24.1 mW from a 1.2V supply voltage for each different cut-off frequency.

Ka-band CMOS 2-Channel Image-Reject Receiver (Ka-대역 CMOS 2채널 이미지 제거 수신기)

  • Dongju Lee;Se-Hwan An;Ji-Han Joo;Jun-Beom Kwon;Younghoon Kim;Sanghun Lee
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.23 no.5
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    • pp.109-114
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    • 2023
  • In this paper, a 2-channel Image-Reject receiver using a 65-nm CMOS process is presented for Ka-band compact radars. The designed receiver consists of Low-Noise Amplifier (LNA), IQ mixer, and Analog Baseband (ABB). ABB includes a complex filter in order to suppress unwanted images, and the variable gain amplifiers (VGAs) in RF block and ABB have gain tuning range from 4.5-56 dB for wide dynamic range. The gain of the receiver is controlled by on-chip SPI controllers. The receiver has noise figure of <15 dB, OP1dB of >4 dBm, image rejection ratio of >30 dB, and channel isolation of >45 dB at the voltage gain of 36 dB, in the Ka-band target frequency. The receiver consumes 420 mA at 1.2 V supply with die area of 4000×1600 ㎛.

A Design of Fully-Differential Bipolar Current Subtracter and its Application to Current-Controlled Current Amplifier (완전-차동형 바이폴라 전류 감산기와 이를 이용한 전류-제어 전류 증폭기의 설계)

  • Cha, Hyeong-U
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.38 no.11
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    • pp.836-845
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    • 2001
  • A Novel fully-differential bipolar current subtracter(FCS) and its application to current controlled current amplifier(CCCA) for high-accuracy current-mode signal processing were designed. To obtain full-differential current output, the FCS was symmetrically composed of two current follower with low current-input impedance. The CCCA to control output current by the bias current was consisted of the subtracter and a current gain amplifier(CGA) with single-ended current output.. The simulation result shows that the FCS has current-input impedance of 5 Ω and a good linearity. The CCCA has 3-dB cutoff frequency of 20 MHz for the range over bias current 100 $\mu$A to 20 mA. The power dissipation of the FCS and CCCA are 1.8 mW and 3 mW, respectively.

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Design of Stack Monitoring System with Improved Performance (성능이 향상된 Stack Monitoring System의 설계)

  • Jang, Kyeong-Uk;Lee, Joo-Hyun;Lee, Seong-Won;Lee, Seung-Ho
    • Journal of IKEEE
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    • v.20 no.3
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    • pp.299-302
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    • 2016
  • In this paper, we designed the stack monitoring system with improved performance. To block the incoming pulse noise to the amplifier, shield and the power supply impedance are reduced and the power circuit is isolated. The control unit is developed with variable high voltage, adaptive gain, offset and threshold in order to match the scintillation detector characteristic to the apparatus. 300-1500V variable high voltage power circuit is configured applicable to various scintillation detector. Stack monitoring system with improved performance guarantee the efficiency and the reliability by considering the characteristic of various scintillation detector. Developed stack monitoring system is evaluated with certified testing equipment and shows excellent performance with respect to the uncertainty of the sensor test results.

Implementation of a CMOS FM RX front-end with an automatic tunable input matching network (자동 변환 임피던스 매칭 네트워크를 갖는 CMOS FM 수신기 프론트엔드 구현)

  • Kim, Yeon-Bo;Moon, Hyunwon
    • Journal of Korea Society of Industrial Information Systems
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    • v.19 no.4
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    • pp.17-24
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    • 2014
  • In this paper, we propose a CMOS FM RX front-end structure with an automatic tunable input matching network and implement it using a 65nm CMOS technology. The proposed FM RX front-end is designed to change the resonance frequency of the input matching network at the low noise amplifier (LNA) according to the channel frequency selected by a phase-locked loop (PLL) for maintaining almost constant sensitivity level when an embedded antenna type with high frequency selectivity characteristic is used for FM receiver. The simulation results of implemented FM front-end show about 38dB of voltage gain, below 2.5dB of noise figure, and -15.5dBm of input referred intercept point (IIP3) respectively, while drawing only 3.5mA from 1.8V supply voltage including an LO buffer.

Design of Variable Gain Low Noise Amplifier Using PTAT Bandgap Reference Circuit (PTAT 밴드갭 온도보상회로를 적용한 가변 이득 저잡음 증폭기 설계)

  • Choi, Hyuk-Jae;Go, Jae-Hyeong;Kim, Koon-Tae;Lee, Je-Kwang;Kim, Hyeong-Seok
    • Journal of The Institute of Information and Telecommunication Facilities Engineering
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    • v.9 no.4
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    • pp.141-146
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    • 2010
  • In this paper, bandgap reference PTAT(Proportional to Absolute Temperature) circuit and flexible gain control of LNA(Low Noise Amplifier) which is usable in Zigbee system of 2.4GHz band are designed by TSMC $0.18{\mu}m$ CMOS library. PTAT bandgap reference circuit is proposed to minimize the instability of CMOS circuit which may be unstable in temperature changes. This circuit is designed such that output voltage remains within 1.3V even when the temperature varies from $-40^{\circ}C$ to $-50^{\circ}C$ when applied to the gate bias voltage of LNA. In addition, the LNA is designed to be operated on 2.4GHz which is applicable to Zigbee system and able to select gains by changing output impedance using 4 NMOS operated switches. The simulation result shows that achieved gain is 14.3~17.6dB and NF (Noise Figure) 1.008~1.032dB.

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Characterization of Wavelength Swept Laser with a Scanning Frequency at 1300 nm (1300 nm 대역 파장 훑음 레이저의 훑음 주파수에 따른 출력 특성)

  • Lee, Byoung-Chang;Oh, Min-Hyun;Jeon, Min-Yong
    • Korean Journal of Optics and Photonics
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    • v.20 no.3
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    • pp.189-194
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    • 2009
  • We demonstrate a ring type wavelength swept laser incorporating a fiber Fabry-Perot tunable filter in a laser cavity using 1300 nm semiconductor optical amplifier as a gain medium. The output characteristics of the wavelength swept laser according to the applied scanning frequencies are analyzed in the temporal and spectral domain. The output of the wavelength swept laser decreases dramatically as the scanning frequency increases. And there is a significant peak power imbalance between the forward scan and the backward scan as the scanning frequency increases. Its use in practical applications might be limited.

The Design and Implementation of MCPA for IMT-2000 using Feedforward Linearization (Feedforward 선형화 기법을 이용한 IMT-2000용 MCPA의 설계 및 제작)

  • 노상연;정성찬;정종한;박명석;박천석
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.12 no.1
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    • pp.99-106
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    • 2001
  • In this paper, an 1-Watt amplifier for IMT-2000 was designed and fabricated using feedfarward method which has the highest linearity and wide bandwidth. Since feedforward is sensitive to surroundings for example heat, input power level, time and so on, adaptive controller using micro controller is adopted. We fabricated a HPA with 35 dB gain, 40 dBm of 1-dB compression point, and utilized variable attenuator and variable phase shifter using reflection type to cancel loop signal. From the measured results, the fo11owing facts were obtained, in signal loop, main carrier over 35 dB was suppressed and error signal over 30 dB is cancelled in error loop, IMD characteristics above 60 dBc were obtained.

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CMOS Analog-Front End for CCD Image Sensors (CCD 영상센서를 위한 CMOS 아날로그 프론트 엔드)

  • Kim, Dae-Jeong;Nam, Jeong-Kwon
    • Journal of IKEEE
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    • v.13 no.1
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    • pp.41-48
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    • 2009
  • This paper describes an implementation of the analog front end (AFE) incorporated with the image signal processing (ISP) unit in the SoC, dominating the performance of the CCD image sensor system. New schemes are exploited in the high-frequency sampling to reduce the sampling uncertainty apparently as the frequency increases, in the structure for the wide-range variable gain amplifier (VGA) capable of $0{\sim}36\;dB$ exponential gain control to meet the needed bandwidth and accuracy by adopting a new parasitic insensitive capacitor array. Moreover, the double cancellation of the black-level noise was efficiently achieved both in the analog and the digital domain. The proposed topology fabricated in a $0.35-{\mu}m$ CMOS process was proved in a full CCD camera system of 10-bit accuracy, dissipating 80 mA at 15 MHz with a 3.3 V supply voltage.

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A 13-Gbps Low-swing Low-power Near-ground Signaling Transceiver (13-Gbps 저스윙 저전력 니어-그라운드 시그널링 트랜시버)

  • Ku, Jahyun;Bae, Bongho;Kim, Jongsun
    • Journal of the Institute of Electronics and Information Engineers
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    • v.51 no.4
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    • pp.49-58
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    • 2014
  • A low-swing differential near-ground signaling (NGS) transceiver for low-power high-speed mobile I/O interface is presented. The proposed transmitter adopts an on-chip regulated programmable-swing voltage-mode driver and a pre-driver with asymmetric rising/falling time. The proposed receiver utilizes a new multiple gain-path differential amplifier with feed-forward capacitors that boost high-frequency gain. Also, the receiver incorporates a new adaptive bias generator to compensate the input common-mode variation due to the variable output swing of the transmitter and to minimize the current mismatch of the receiver's input stage amplifier. The use of the new simple and effective impedance matching techniques applied in the transmitter and receiver results in good signal integrity and high power efficiency. The proposed transceiver designed in a 65-nm CMOS technology achieves a data rate of 13 Gbps/channel and 0.3 pJ/bit (= 0.3 mW/Gbps) high power efficiency over a 10 cm FR4 printed circuit board.