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http://dx.doi.org/10.6109/jkiice.2013.17.3.678

A 65-nm CMOS Low-Power Baseband Circuit with 7-Channel Cutoff Frequency and 40-dB Gain Range for LTE-Advanced SAW-Less RF Transmitters  

Kim, Sung-Hwan (동아대학교)
Kim, Chang-Wan (동아대학교)
Abstract
This paper describes a low-power baseband circuit for SAW-less LTE-Advanced transmitters. The proposed transmitter baseband circuit consists of a 2nd-order Tow-Thomas type active RC-LPF and a 1st-order passive RC LPF. It can provide a 7 multi-channel cut-off frequencies and wide gain control range of -41 dB ~ 0 dB with a 1-dB step. The proposed 2nd-order active RC-LPF adopts an op-amp in which three other sub-op amps are in parallel connected to reduce DC current for different cutoff frequency. In addition, each sub-op amp adopts both Miller and feed-forward phase compensation method to achieve an UGBW of more than 1-GHz with a small DC power consumption. The proposed baseband circuit is implemented in 65-nm CMOS technology, consuming DC power from 6.3 mW to 24.1 mW from a 1.2V supply voltage for each different cut-off frequency.
Keywords
CMOS; Frequency compensation; LTE-Advanced; LPF; SAW-Less; Transmitter;
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