• Journal of IKEEE
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• v.23 no.1
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• pp.326-329
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• 2019

Gallium nitride(GaN) has been a superior candidate for the next generation power electronics. As GaN-on-Si substrate technology is mature, there has been new demand for monolithic integration of GaN technology with Si CMOS devices. In this work, (110)Si CMOS process was developed and the fabricated devices were evaluated in order to confirm the feasibility of utilizing domestic foundry facility for monolithic integration of Si CMOS and GaN power devices.

• Korean Journal of Optics and Photonics
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• v.10 no.4
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• pp.306-310
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• 1999

Electron intersubband absorption in Sb $\delta$-doped Si(110)/SiGe multiple quantum well structures is observed. Normally incident light can excite electrons in Si(110) quantum wells, which is not possible for Si(001) or GaAs quantum wells. The influence of Ge composition in SiGe barries is investigated. As the Ge composition in SiGe barriers increases, the absorption strength is decreased and the transition energy is increased. It is verifired by comparing the calculated and experimental results obtained at various incident and polarization angles that normally incident light and parallel incident light are absorbed in different processes.

• Journal of the Korean Vacuum Society
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• v.4 no.3
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• pp.319-326
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• 1995

초고진공에서 Si(100)-2X1 기판 위에 Pt를 약 100$\AA$의 두께로 증착한 후 in-situ로 열처리하는 고상에피택셜 성장법으로 PtSi 박막을 형성시켰다. XRD와 XPS 분석 결과 $200^{\circ}C$로 열처리한 시료에서는 Pt3Si, Pt2Si와 PtSi의 상이 섞여 있었으나 50$0^{\circ}C$로 열처리한 시료에서는 PtSi의 단일상만 확인되었으며, 형성된 PtSi 박막은 주상구조와 판상구조의 이중구조를 나타내었다. 기판 온도를 $500^{\circ}C$로 유지하면서 Pt를 증착한 후 $750^{\circ}C$에서 열처리한 경우에는 판상구조를 갖는 양질의 PtSi 박막이 에피택셜 성장되었다. HRTEM분석 결과 에피텍셜 성장된 PtSi와 기판 Si(100)의 계면은 PtSi[110]//Si[110], ptSi(110)//Si(100)의 정합성을 가졌다. 판상구조를 갖는 PtSi상의 에피택셜 방향은 기판과 열처리 온도에는 의존하나 열처리 시간에는 무관한 것으로 나타났다.

• Proceedings of the Materials Research Society of Korea Conference
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• 1997.10a
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• pp.110-110
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• 1997

• Korean Journal of Materials Research
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• v.9 no.5
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• pp.528-532
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• 1999

Y$_2$O$_3$films were grown on SiO$_2$-covered Si(111), and hydrogen-terminated Si(111), and hydrogen-terminated Si(111) substrates at 50$0^{\circ}C$ by ultrahigh vacuum ionized cluster beam deposition (UHV-ICB). The microstructures and growth behavior of these films have been investigated by transmission electron diffraction (TED) and high-resolution transmission electron microscopy(HREM). The TED results show that the $Y_2$O$_3$grown on the SiO$_2$-Si has the epitaxial relationship of (11-1)Y$_2$O$_3$∥(111)Si and [-110]Y$_2$O$_3$∥[-110]Si. The film on the H-Si substrate contains YS\ulcorner and amorphous YSi\ulcornerO\ulcorner layers at the interface, having the orientation relationship each other. For the YSi\ulcorner and the Si substrate, the relationship is (0001)YSi\ulcorner∥(111)Si and [1-210]YSi\ulcorner∥∥[-110]Si. For the $Y_2$O$_3$and the YSi\ulcorner ; the relationship is as follows: (11-1)Y$_2$O$_3$∥(0001)YSi\ulcorner and [-110]Y$_2$O$_3$∥[1-210]YSi\ulcorner(111)Y$_2$O$_3$∥(0001)YSi\ulcorner and [-110]Y$_2$O$_3$∥[1-210]YSi\ulcorner. Explanation is given to describe the formation mechanisms of the interfacial phases of SiO\ulcorner, YSi\ulcornerO\ulcorner and YSi\ulcorner. It is shown that the crystallinity of the $Y_2$O$_3$film on the SiO$_2$-Si(111) is better than that of $Y_2$O$_3$on H-Si(111).

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1250-1253
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• 1994

(100), (110) and (111) Si wafers are etched by isotropic etching method, anisotropic etching method using KOH etchant and EPW etchant and combined two-step etching method to compare the results. Isotopic etching method is effective in fabrication of wedge-shaped tips, especially (110) Si. Anisotropic etching method of (100) Si using EPW etchant can fabricate sharp cone-shaped tips and isotropic etching after anisotropic etching of (100) Si can fabricate wedge-shaped tips.

• Nuclear Engineering and Technology
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• v.51 no.5
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• pp.1390-1397
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• 2019

SiC coating and SiC/glassy carbon composite coating were prepared on IG-110 nuclear graphite (Toyo Tanso Co., Ltd., Japan) to strengthen its inertness to molten fluoride salt used in molten salt reactor (MSR). Two kinds of modified graphite were obtained and correspondingly named as IG-110-1 and IG-110-2, which referred to modified IG-110 with a single SiC coating and a SiC/glassy carbon composite coating, respectively. Both structure and property of modified graphite were carefully researched and contrasted with virgin IG-110. Results indicated that modified graphite presented better comprehensive properties such as more compact structure and higher resistance to molten salt infiltration. With the protection of coatings, the infiltration amounts of fluoride salt into modified graphite were much less than that into virgin IG-110 at the same circumstance. Especially, the infiltration amount of fluoride salt into IG-110-2 under 5 atm was merely 0.26 wt%, which was much less than that into virgin IG-110 under 1.5 atm (13.5 wt%) and the critical index proposed for nuclear graphite used in MSR (0.5 wt%). The SiC/glassy carbon composite coating gave rise to highest resistance to molten salt infiltration into IG-110-2, and thus demonstrated it could be a promising protective coating for nuclear graphite used in MSR.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.4
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• pp.267-273
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• 1998

The band structures of $Si_{1-x}Ge_x$ layers grown on $Si_{1-y}Ge_y$ substrate are calculated using k$\cdot$p and strain Hamiltonians. The hole drift mobilities in the plane direction are then calculated by taking into account the screening effect and the density-of-states of the impurity band. When $Si_{1-x}Ge_x$ is grown on Si substrate, the mobilities of (110) and (111) $Si_{1-x}Ge_x$ layers are larger than that of (001) $Si_{1-x}Ge_x$. However, due to the large defect and surface scattering, (110) and (111) $Si_{1-x}Ge_x$ layers may not be useful for the development of the fast device. Meanwhile, when Si is grown on $Si_{1-y}Ge_y$ substrate, the mobilities of (001) and (110) Si layers are greatly enhanced. Based on the amount of defect and the surface scattering, it is expected that Si grown on (001) $Si_{1-y}Ge_y$ substrate, where the Ge contents is larger than 10%(y>0.1), has the highest mobility.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.383-383
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• 2010

Gas-phase hydrogen atoms create a variety of chemical and physical phenomena on Si surfaces: adsorption, abstraction of pre-adsorbed H, Si etching, Si amorphization, and penetration into the bulk lattice. Thermal desorption/evolution analyses exhibited three distinct peaks, including one from the crystalline bulk. It was previously found that thermal-energy gaseous H(g) atoms penetrate into the Si(100) crystalline bulk within a narrow substrate temperature window(centered at ~460K) and remain trapped in the bulk lattice before evolving out at a temperature as high as ~900K. Developing and sustaining atomic-scale surface roughness, by H-induced silicon etching, is a prerequisite for H absorption and determines the $T_s$ windows. Issues on the H(g) absorption to be further clarified are: (1) the role of the detailed atomic surface structure, together with other experimental conditions, (2) the particular physical lattice sites occupied by, and (3) the chemical nature of, absorbed H(g) atoms. This work has investigated and compared the thermal H(g) atom absorptivity of Si(100), Si(111) and Si(110) samples in detail by using the temperature programmed desorption mass spectrometry (TPD-MS). Due to the differences in the atomic structures of, and in the facility of creating atom-scale etch pits on, Si(100), (100) and (110) surfaces, the H-absorption efficiency was found to be larger in the order of Si(100) > Si(111) > Si(110) with a relative ratio of 1 : 0.22 : 0.045. This intriguing result was interpreted in terms of the atomic-scale surface roughening and kinetic competition among H(g) adsorption, H(a)-by-H(g) abstraction, $SiH_3(a)$-by-H(g) etching, and H(g) penetraion into the crystalline silicon bulk.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1974-1976
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• 1996

An electrostatically driven comb actuator with $525{\mu}m$ height was fabricated using (110) Si anisotropic etching in the Potassium Hydroxide(KOH) solution. The etch-rate and etch-rate ratio are strongly dependent on the weight % and temperature of KOH solution. We developed the optimal condition for the anisotropic etching on (110) wafer with varying these conditions. The force that the comb-drive actuator generates is inversely proportional to the distance of gap and proportional to the height of the comb electrodes. The electrodes must have the high aspect ratio. The (110) Si anisotropic etching is very useful to get a high aspect ratio structure.