Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 1994.07b
- /
- Pages.1250-1253
- /
- 1994
Fabrication of (100), (110), (111) Si Tips using Various Wet Etching Method
다양한 습식식각법을 이용한 (100), (110), (111) Si tip의 제작
- Park, Heung-Woo (Seoul City Univ. Dept. Electronic Engineering) ;
-
Ju, Byeong-Kwon
(KIST Div. Electronics and Information Technology)
;
- Ko, Chang-Gi (Seoul City Univ. Dept. Electronic Engineering) ;
- Hong, Soon-Kwan (Seoul City Univ. Dept. Electronic Engineering) ;
- Oh, Myoung-Hwan (KIST Div. Electronics and Information Technology) ;
- Kim, Chui-Ju (Seoul City Univ. Dept. Electronic Engineering)
- 박흥우 (서울시립대학교 전자공학과) ;
-
주병권
(한국과학기술연구원 정보전자 연구부)
;
- 고창기 (서울시립대학교 전자공학과) ;
- 홍순관 (서울시립대학교 전자공학과) ;
- 오명환 (한국과학기술연구원 정보전자 연구부) ;
- 김철주 (서울시립대학교 전자공학과)
- Published : 1994.07.21
Abstract
(100), (110) and (111) Si wafers are etched by isotropic etching method, anisotropic etching method using KOH etchant and EPW etchant and combined two-step etching method to compare the results. Isotopic etching method is effective in fabrication of wedge-shaped tips, especially (110) Si. Anisotropic etching method of (100) Si using EPW etchant can fabricate sharp cone-shaped tips and isotropic etching after anisotropic etching of (100) Si can fabricate wedge-shaped tips.
Keywords