• Korean Journal of Metals and Materials
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• v.48 no.7
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• pp.625-629
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• 2010

This study investigates the effects of porosity on the thermal stability and the thermal shock resistance of a porous nozzle used for blowing an inert gas. The samples of $Al_2O_3-SiO_2-ZrO_2$ system, which had the apparent porosity of 16~30% and bulk density of $2.6{\sim}3.2g/cm^3$, were prepared by adding different graphite contents (5, 10, 20 wt%) as a pore-forming agent. The thermal shock test was conducted at ${\Delta}T=500$, 1000, and $1400^{\circ}C$ also and the thermal stability was also carried out at 1550, 1600, and $1650^{\circ}C$ for 5 hrs. The specimen contained 10 wt% graphite had uniform pore size distribution, whereas the specimen with 20 wt% graphite showed non-uniform pore size distribution. As a result of thermal shock test, the specimen containing 10 wt% graphite appears to have higher mechanical strength than the other specimens (5, 20 wt% graphite). Both the 5 wt% and 20 wt% graphite specimens developed a non-uniform pore size distribution and cracks that were generated by intensive thermal stress.

• Journal of the Microelectronics and Packaging Society
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• v.18 no.3
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• pp.9-17
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• 2011

Nano-composite solders have been studied to improve the properties of Pb-free solder joints. The nanoparticles in the composite solders were carbon nanotubes(CNTs), metals (Ag, Ni, Cr, etc.), ceramics (SiC, $ZrO_2$, $TiB_2$, etc.). To fabricate the nano-composite solders, mechanical mixing methods and in-situ fabrication method has been used for well-dispersed nano phase. The characteristic properties of the nano-composite solders were high creep resistance, low undercooling, low IMC growth rate and fine microstructures. More researches on the nano-composite solders are required to improve the processibility and the reliability of the nano-composite solder joints.

• Journal of Welding and Joining
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• v.32 no.1
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• pp.40-46
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• 2014

Bonding technology and bonding mechanism of metal to ceramic including brazing, diffusion bonding, friction welding and etc were reviewed in this study. Various factors should be considered from a bonding design step to acquire a good bonding joint because of a large difference between metal and ceramic in crystal lattice, coefficient of thermal expansion and various properties. In addition, metal and ceramic bonding technologies are constantly being developed according to precise components, multi-function and application to harsh environment. However, improvement of bonding properties and bonding reliability also should be accompanied. Bonding of ceramics, such as $ZrO_2$, $Ti_3AlC_2$ and SiC, to metals like Ti-alloy, TiAl and steel were described in this paper.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.1
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• pp.66-79
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• 2008

Several oxides have recently been reported to have resistance-switching characteristics for nonvolatile memory (NVM) applications. Both binary and ternary oxides demonstrated great potential as resistive-switching memory elements. However, the switching mechanisms have not yet been clearly understood, and the uniformity and reproducibility of devices have not been sufficient for gigabit-NVM applications. The primary requirements for oxides in memory applications are scalability, fast switching speed, good memory retention, a reasonable resistive window, and constant working voltage. In this paper, we discuss several materials that are resistive-switching elements and also focus on their switching mechanisms. We evaluated non-stoichiometric polycrystalline oxides ($Nb_2O_5$, and $ZrO_x$) and subsequently the resistive switching of $Cu_xO$ and heavily Cu-doped $MoO_x$ film for their compatibility with modem transistor-process cycles. Single-crystalline Nb-doped $SrTiO_3$ (NbSTO) was also investigated, and we found a Pt/single-crystal NbSTO Schottky junction had excellent memory characteristics. Epitaxial NbSTO film was grown on an Si substrate using conducting TiN as a buffer layer to introduce single-crystal NbSTO into the CMOS process and preserve its excellent electrical characteristics.

• Economic and Environmental Geology
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• v.40 no.5
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• pp.675-689
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• 2007

Kilauea volcano's summit area was formed by continuous ind/or sporadic eruption activities for several hundreds years. In this study, we mainly focused on the trace elements characteristics through systematic sample rocks erupted from 1790 to September of 1982. Under the microscope it can be observed some main minerals such as olivine, clinopyroxene. and plagioclase with minor opaque minerals including Cr-spinel and ilmenite. Zr, V, Y, Ti elements show incompatible activities with MgO while Ni, Cr, Co elements show highly compatible properties. Elements like as Ba, Rb, Th, Sr, Nd are highly incompatible to show positive trends with $K_2O$. In the REE diagram LREE is more enriched than HREE suggesting typical Oceanic Island Basalt(OIB) type. It can be suggested that Sr have an effect on the fractionation of plagioclase from the kink in the $K_2O$ variation diagram. Y/Ho ratio diagram shows there was no fluids effect in the historical Kilauea volcano but Zr/Hf ratio diagram shows a significant difference between Kilauea lavas and PuuOo lavas. There are distinctive changes of trace element contents showing in particular abrupt changes of temporal variations between 1924 and 1954. Moreover, PuuOo lavas which had been erupted since 1983 follow these decreasing trends of trace element variation. Therefore, it is strongly suggested that these abrupt changes of trace elements trends result from the huge collapse geological event which formed Halemaumau crater in 1924 causing contamination effects of crustal contents into magma chamber and from the changes of parental magma composition injected into Kilauea volcano's summit magma reservoir.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1553-1555
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• 1999

Recently, $SrBi_2Ta_2O_9$(SBT) and $Pb(ZrTi)O_3$(PZT) were much attracted as materials of capacitor for ferroelectric random access memory(FRAM) showing higher read/write speed, lower power consumption and nonvolartility. Bi-layered SBT thin film has appeared as the most prominent fatigue free and low operation voltage for use in nonvolatile memory. To highly integrate FRAM, SBT thin film should be etched. A lot of papers on SBT thin film and its characteristics have been studied. However, there are few reports about SBT thin film due to difficulty of etching. In order to investigate properties of etching of SBT thin film, SBT thin film was etched in $CF_4$/Ar gas plasma using magnetically enhanced inductively coupled plasma (MEICP) system. When $CF_4/(CF_4+Ar)$ is 0.1, etch rate of SBT thin film was $3300{\AA}/min$, and etch rate of Pt was $2495{\AA}/min$. Selectivities of SBT to Pt. $SiO_2$ and photoresist(PR) were 1.35, 0.6 and 0.89, respectively. With increasing $CF_4$ gas, etch rate of SBT thin film and $P_t$ decreased.

• The Journal of the Petrological Society of Korea
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• v.14 no.2 s.40
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• pp.83-92
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• 2005

It has recently been proposed that granites can be divided into hot and cold ones by absence and presence of inherited zircon, respectively, which is closely related to zircon saturation temperature. The Phanerozoic granites in South Korea are divided into high- and low-Zr groups in a $SiO_2-Zr$ diagram, which appears to be related to their intrusive age. Most Triassic-Jurassic granites belong to low-Zr group, whereas most Cretaceous-Early Tertiary granites belong to the high-Zr group with the exception of geographically distinct Masan and Jinhae granites that belong low-Zr group. Calculated zircon saturation temperatures using major elements and Zr contents indicate that the Cretaceous-Early Tertiary granites $(608-834^{\circ}C,\;average\; 782\pm31^{\circ}C)$ except for the Masan and Jinhae granites $(average\;759\pm16^{\circ}C)$ show higher temperature than the Triassic-Jurassic granites $(642-824^{\circ}C,\;average\;756\pm31^{\circ}C)$. U-Pb zircon isotope data of the Triassic-Jurassic granites reported so far define discordia in a concordia diagram, which indicates presence of inherited zircon and agrees with their low zircon saturation temperatures. So the Triassic-Jurassic granites appear to belong to cold granite. On the other hand, presence or absence of inherited zircon has not been known for the Cretaceous-Early Tertiary granites with relatively high zircon saturation temperature, so that their classification into hot or cold granite awaits further study. Nevertheless, the Creatceous-Early Tertiary granites may have formed at higher temperature than the Triassic-Jurassic granites, since zircon saturation temperature reflects formation temperature of magma to a certain degree.

• Journal of the Korean Vacuum Society
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• v.2 no.4
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• pp.416-423
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• 1993

Hydrogen depth profiling was performed by H(19F, $\alpha$${\gamma}$) nuclear resonance reactin . A cesium sputtering ion sorce and 1.7MV Tandem Van de Graaff accelerator was used for the production of 6.5MeV 19F ion. The ${\gamma}$ rays produced by the reaction were measure dby 3" $\times$3" and 6" $\times$8" Nal detectors . A test measurement was done for hydrogen contaminatin layer of a bare silicon wafer, Si3N4(H) and Zr(O)a-Si/Si for the purpose of verifying the applicability , detection limit and the reliability of the method.ility of the method.

• Korean Journal of Materials Research
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• v.28 no.11
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• pp.611-614
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• 2018

Laminate composites composed of $0.95Pb(Zr_{0.52}Ti_{0.48})O_3-0.05Pb(Mn_{1/3}Sb_{2/3})O_3$ piezoelectric ceramic and Fe-Si-B based magnetostrictive amorphous alloy are fabricated, and the effect of control of the areal dimensions and the thickness of the piezoelectric layer on the magnetoelectric(ME) properties of the laminate composites is studied. As the aspect ratio of the piezoelectric layer and the magnetostrictive layer increases, the maximum value of the ME voltage coefficient(${\alpha}_{ME}$) increases and the intensity of the DC magnetic field at which the maximum ${\alpha}_{ME}$ value appears decreases. Moreover, as the thickness of the piezoelectric layer decreases, ${\alpha}_{ME}$ tends to increase. The ME composites exhibit ${\alpha}_{ME}$ values higher than $1Vcm^{-1}Oe^{-1}$ even at the non-resonance frequency of 1 kHz. This study shows that, apart from the inherent characteristics of the piezoelectric composition, small thicknesses and high aspect ratios of the piezoelectric layer are important dimensional determinants for achieving high ME performance of the piezoelectric-magnetostrictive laminate composite.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05c
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• pp.93-96
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• 2002

In this study, PZT thin films were fabricated using sol-gel processing onto Si/$SiO_2$/Ti/Pt substrates. PZT sol with different Zr/Ti ratio(20/80, 30/70, 40/60, 52/48) were prepared, respectively. The films were fabricated by using the spin-coating method on substrates. The films were heat treated at $450^{\circ}C$, $650^{\circ}C$ by rapid thermal annealing(RTA). The preferred orientation of the PZT thin films were observed by X-ray diffraction(XRD), and Scanning electron microscopy(SEM). All of the resulting PZT thin films were crystallized with perovskite phase. The fine crystallinity of the films were fabricated. Also, we found that the ferroelectric properties from the dielectric constant of the PZT thin films were over 600 degrees, P-E hysteresis constant. And the leakage current densities of films were lower than $10^{-8}A/cm^2$. It is concluded that the PZT thin films by sol-gel process to be convinced of application for ferroelectric memory device.