• 전자공학회논문지A
• /
• 제33A권3호
• /
• pp.82-88
• /
• 1996

A simpel formular is proposed for the analysis of gate delay of CMOS gate in the low V$_{GS}-V_{TH}$ scaling. The effects of magnitude of V$_{GS}-V_{TH}$ on gate delay can be readily found through the formula so that it can be used ot design the device parameters in the low V$_{DD}$ CMOS circuits. The measured sresutls confirm the usability of the proposed formula and quantifies the improtance of V$_{TH}$ effects on gate delay under low voltae operation. Applying the formula to the prototype NMOSFET devices representing the five generations of technology, the impacts of the V$_{GS}-V_{TH}$ on the various aspects of the circuit and device characteristics are investigated in a consistent manner.

• 전기전자학회논문지
• /
• 제28권1호
• /
• pp.110-115
• /
• 2024

본 논문은 3D NAND Flash memory에서 tapering된 O/N/O(Oxide/Nitride/Oxide) 구조와 blocking oxide를 ferroelectric material로 대체한 O/N/F(Oxide/Nitride/Ferroelectric) 구조의 V_th(Threshold Voltage) 변화량을 분석했다. Tapering 각도가 0°일 때 O/N/F 구조는 O/N/O 구조보다 저항이 작고 WL(Word-Line) 상부와 WL 하부의 V_th 변화량이 감소한다. Tapering된 3D NAND Flash memory는 WL 상부에서 WL 하부로 내려갈수록 channel 면적이 감소하며 channel 저항이 증가한다. 따라서 tapering 각도가 증가할수록 WL 상부의 V_th가 감소하고 WL 하부의 V_th는 증가한다. Tapering된 O/N/F 구조는 channel 반지름 길이와 비례하는 V_fe로 인해 WL 상부의 V_th는 O/N/O 구조보다 더 감소한다. 또한 O/N/F 구조의 WL 하부는 O/N/O 구조보다 V_th가 증가하기 때문에 tapering 각도에 따른 V_th 변화량이 O/N/O 구조보다 더 증가한다.

• 생명과학회지
• /
• 제7권1호
• /
• pp.39-48
• /
• 1997

Cigarette is the risk factor of Lung cancer, chronic obstructive pulmonary disease and ischemic heart disease. So I have studied the effect of Macmoondongtang in rat exposed to cigarette smoke. Thirty-six healthy rat subjects were divided into 6 groups-the control group(sample I), the groups of administration of Platycodi Radix(sampleII), Adenophorae Radix(sampleIII), Liriopsis Tuber(sampleIV), Maximowicziae Fructus(sample V) and Macmoondongtang(sample VI), and expose to cigarette per day for 12 days. 1. On level of leckocyte are significant all the group of sampleII, sampleIII, sample IV, sample V, sample VI on 6th day and singificant the groups of sampleIV, sample V on 12th day. 2. On level of hemoglobin are singificant the groups of sample IV, sample V, sample VI, on 6th day, and significant sample II, sample III, sample IV, sample V, sample VI on 12th day. 3. On platelet level are significant all the group of sampleII, sample III, sample IV, sample V, sample VI on 12th day. 4. On SOD activity are significant all the groups of sample IV, sample VI, on 6th day, and significant sampleII, sample III, sample VI on 12th day. According to the results, Macmoondogtang is effective to risk of cigarette smoke.

• Journal of information and communication convergence engineering
• /
• 제11권4호
• /
• pp.288-292
• /
• 2013

In this paper, a carbon implant is investigated in detail from the perspectives of performance advantages and side effects for the thick n-type metal-oxide-semiconductor field-effect transistor (n-MOSFET). Threshold voltage ($V_{th}$) adjustment using a carbon implant significantly improves the $V_{th}$ mismatch performance in a thick (3.3-V) n-MOS transistor. It has been reported that a bad mismatch occurs particularly in the case of 0.11-${\mu}m$ $V_{th}$ node technology. This paper investigates a carbon implant process as a promising candidate for the optimal $V_{th}$ roll-off curve. The carbon implant makes the $V_{th}$ roll-off curve perfectly flat, which is explained in detail. Further, the mechanism of hot carrier injection lifetime degradation by the carbon implant is investigated, and new process integration involving the addition of a nitrogen implant in the lightly doped drain process is offered as its solution. This paper presents the critical side effects, such as Isub increases and device performance shifts caused by the carbon implant and suggests an efficient method to avoid these issues.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
• /
• pp.262-263
• /
• 2011

Flexible electronics, a future technology of electronics, require a low cost integrated circuit that can be built on various types of the flexible substrates. As a potential candidate for this application, a single walled carbon nanotube network is studied as an active device with a scheme of thin film transistor. Transistors are formed on a plastic foil by the Roll-to-Roll (R2R) and the Roll-to-Device (R2D) printing method. For both printing methods, electrical transports for the transistors are presented with the temperature dependence of threshold voltage (V_Th) and mobility from the measured transfer curves at temperatures ranging from 10 K to 300 K. It is observed that ${\mu}=0.044cm^2/V{\cdot}sec$ and V_Th=7.28V for R2R and ${\mu}=0.025cm^2/V{\cdot}sec$ and V_Th=3.10V for R2D, both for the temperature at 300K. Temperature dependence of mobility and V_Th is observed. However for R2R, the temperature dependence of V_Th is constant. It is the difference between, R2R and R2D.

• 한국전기전자재료학회논문지
• /
• 제26권2호
• /
• pp.92-97
• /
• 2013

In this paper the author proposes a method of implementing a numerical model for threshold voltage ($V_{th}$) shift in organic thin-film transistors (OTFTs) into SPICE tools. $V_{th}$ shift is first numerically modeled by dividing the shift into sequentially ordered groups. The model is then used to derive a simulations model which takes into simulation parameters and calculation complexity. Finally, the numerical and simulation models are implemented in AIM-SPICE. The SPICE simulation results agree well with the $V_{th}$ shift obtained from an OTFT fabricated without any optimization. The proposed method is also used to implement the stretched-exponential time dependent $V_{th}$ shift in AIM-SPICE and the results show the proposed method is applicable to various types of $V_{th}$ shifts.

• Current Applied Physics
• /
• 제18권11호
• /
• pp.1447-1450
• /
• 2018

The electron spin resonance (ESR) detects point defect of the In-Ga-Zn oxide (IGZO) like singly ionized oxygen vacancies and excess oxygen, and get spin density as a parameter of defect state. So, we demonstrated the spin density measurement of the IGZO film with various deposition conditions and it has linear relationship. Moreover, we matched the spin density with the total BTS and the threshold voltage ($V_{th}$) distribution of the IGZO thin film transistors. The total BTS ${\Delta}V_{th}$ and the $V_{th}$ distribution were degraded due to the spin density increases. The spin density is the useful indicator to predict $V_{th}$ instability of IGZO TFTs.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2007년도 제38회 하계학술대회
• /
• pp.1263-1264
• /
• 2007

자계 유도 고상결정화(FESPC)를 이용하여 제작한 다결정실리콘(poly-Si) 박막 트랜지스터(TFT)는 비정질 실리콘 박막 트랜지스터(a-Si:H TFT)보다 뛰어난 전기적 특성과 우수한 안정성을 지닌다. $V_{DS}$ = -0.1 V에서 채널 폭과 길이가 각각 $5\;{\mu}m$, $7\;{\mu}m$인 P형 TFT의 이동도(${\mu}$)와 문턱 전압($V_{TH}$)은 각각 $31.98\;cm^2$/Vs, -6.14 V 이다. FESPC TFT는 일반 poly-Si TFT에 비해 채널 내 결정 경계 숫자가 많아서 상대적으로 열악한 특성을 가진다. 채널 길이 $5\;{\mu}m$인 TFT의 $V_{TH}$는 채널 길이 $18\;{\mu}m$ 소자의 $V_{TH}$보다 1.36V 작지만, 일반적으로 큰 값이다. 이 현상은 채널에 다수의 결정 경계가 존재하고, 수평 전계가 크기 때문이다. 수평 전계가 증가하면, 결정 경계의 전위 장벽 높이가 감소하게 되는데, 이는 DIGBL 효과이다. ${\mu}$의 증가에 따라서, 드레인 전류가 증가하고 $V_{TH}$은 감소한다. 활성화 에너지($E_a$)는 드레인 전압과 결정 경계의 수에 따라 변하는데, 드레인 전압이 크거나 결정 경계의 수가 감소하면 $E_a$는 감소한다. $E_a$가 감소하면 $V_{TH}$가 감소한다. 유리기판 위의 FESPC를 이용한 P형 poly-Si TFT의 $V_{TH}$는 채널의 길이와 $V_{DS}$에 영향을 받는다. 증가한 수평 전계가 결정 경계에서 에너지 장벽을 낮추는 효과를 일으키기 때문이다.

• Korean Journal of Acupuncture
• /
• 제20권4호
• /
• pp.65-75
• /
• 2003

This study was carried to identify the component of Spleen Meridian Muscle in human, dividing into outer, middle, and inner part. Lower extremity and trunk were opened widely to demonstrate muscles, nerve, blood vessels and the others, displaying the inner structure of Spleen Meridian Muscle. We obtained the results as follows; 1. Spleen Meridian Muscle is composed of the muscle, nerve and blood vessels. 2. In human anatomy, it is present the difference between a term of nerve or blood vessels which control the muscle of Meridian Muscle and those which pass near by Meridian Muscle. 3. The inner composition of meridian muscle in human arm is as follows ; 1) Muscle; ext. hallucis longus tend., flex. hallucis longus tend.(Sp-1), abd. hallucis tend., flex. hallucis brevis tend., flex. hallucis longus tend.(Sp-2, 3), ant. tibial m. tend., abd. hallucis, flex. hallucis longus tend.(Sp-4), flex. retinaculum, ant. tibiotalar lig.(Sp-5), flex. digitorum longus m., tibialis post. m.(Sp-6), soleus m., flex. digitorum longus m., tibialis post. m.(Sp-7, 8), gastrocnemius m., soleus m.(Sp-9), vastus medialis m.(Sp-10), sartorius m., vastus medialis m., add. longus m.(Sp-11), inguinal lig., iliopsoas m.(Sp-12), ext. abdominal oblique m. aponeurosis, int. abd. ob. m., transversus abd. m.(Sp-13, 14, 15, 16), ant. serratus m., intercostalis m.(Sp-17), pectoralis major m., pectoralis minor m., intercostalis m.(Sp-18, 19, 20), ant. serratus m., intercostalis m.(Sp-21) 2) Nerve; deep peroneal n. br.(Sp-1), med. plantar br. of post. tibial n.(Sp-2, 3, 4), saphenous n., deep peroneal n. br.(Sp-5), sural cutan. n., tibial. n.(Sp-6, 7, 8), tibial. n.(Sp-9), saphenous br. of femoral n.(Sp-10, 11), femoral n.(Sp-12), subcostal n. cut. br., iliohypogastric n., genitofemoral. n.(Sp-13), 11th. intercostal n. and its cut. br.(Sp-14), 10th. intercostal n. and its cut. br.(Sp-15), long thoracic n. br., 8th. intercostal n. and its cut. br.(Sp-16), long thoracic n. br., 5th. intercostal n. and its cut. br.(Sp-17), long thoracic n. br., 4th. intercostal n. and its cut. br.(Sp-18), long thoracic n. br., 3th. intercostal n. and its cut. br.(Sp-19), long thoracic n. br., 2th. intercostal n. and its cut. br.(Sp-20), long thoracic n. br., 6th. intercostal n. and its cut. br.(Sp-21) 3) Blood vessels; digital a. br. of dorsalis pedis a., post. tibial a. br.(Sp-1), med. plantar br. of post. tibial a.(Sp-2, 3, 4), saphenous vein, Ant. Med. malleolar a.(Sp-5), small saphenous v. br., post. tibial a.(Sp-6, 7), small saphenous v. br., post. tibial a., peroneal a.(Sp-8), post. tibial a.(Sp-9), long saphenose v. br., saphenous br. of femoral a.(Sp-10), deep femoral a. br.(Sp-11), femoral a.(Sp-12), supf. thoracoepigastric v., musculophrenic a.(Sp-16), thoracoepigastric v., lat. thoracic a. and v., 5th epigastric v., deep circumflex iliac a.(Sp-13, 14), supf. epigastric v., subcostal a., lumbar a.(Sp-15), intercostal a. v.(Sp-17), lat. thoracic a. and v., 4th intercostal a. v.(Sp-18), lat. thoracic a. and v., 3th intercostal a. v., axillary v. br.(Sp-19), lat. thoracic a. and v., 2th intercostal a. v., axillary v. br.(Sp-20), thoracoepigastric v., subscapular a. br., 6th intercostal a. v.(Sp-21)

• 전기전자학회논문지
• /
• 제24권1호
• /
• pp.284-292
• /
• 2020

SiC 기반 소자는 silicon 소자 대비 1200V 이상의 고전압 환경에서 우수하게 동작하며 특히 매우 높은 온도에서 안정적인 특성을 보여준다. 따라서 최근 1700V급 UMOSFET이 전기 자동차, 항공기 등의 전력시스템의 사용을 목표로 활발하게 연구개발 되고 있다. 본 논문에서는 최근 연구되고 있는 세 종류의 1700급 UMOSFET-Conventional UMOSFET (C-UMOSFET), Source Trench UMOSFET (ST-UMOSFET), Local Floating Superjunction UMOSFET (LFS-UMOSFET)-에 대해 온도 변화(300K-600K)에 따른 전력소자에서 중요한 변수 (breakdown voltage(BV), on-resistance(R_on), threshold voltage(v_th), transconductance(g_m))의 신뢰성 특성을 비교 분석하였다. 세 소자 모두 온도 증가에 따른 BV 증가, R_on 증가, v_th 감소, g_m 감소를 확인하였다. 그러나 세 소자의 구조 차이에 따라 BV, R_on v_th, g_m 변화에 차이가 있어 그 정도 및 원인에 대해 비교 분석하였다. 모든 결과는 sentaurus TCAD을 통해 simulation 되었다.