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http://dx.doi.org/10.1016/j.cap.2018.08.016

Correlation between spin density and Vth instability of IGZO thin-film transistors  

Park, Jee Ho (Device Process Research Division, LG Display R&D Center)
Lee, Sohyung (Device Process Research Division, LG Display R&D Center)
Lee, Hee Sung (Device Process Research Division, LG Display R&D Center)
Kim, Sung Ki (Device Process Research Division, LG Display R&D Center)
Park, Kwon-Shik (Device Process Research Division, LG Display R&D Center)
Yoon, Soo-Young (Device Process Research Division, LG Display R&D Center)
Publication Information
Current Applied Physics / v.18, no.11, 2018 , pp. 1447-1450 More about this Journal
Abstract
The electron spin resonance (ESR) detects point defect of the In-Ga-Zn oxide (IGZO) like singly ionized oxygen vacancies and excess oxygen, and get spin density as a parameter of defect state. So, we demonstrated the spin density measurement of the IGZO film with various deposition conditions and it has linear relationship. Moreover, we matched the spin density with the total BTS and the threshold voltage ($V_{th}$) distribution of the IGZO thin film transistors. The total BTS ${\Delta}V_{th}$ and the $V_{th}$ distribution were degraded due to the spin density increases. The spin density is the useful indicator to predict $V_{th}$ instability of IGZO TFTs.
Keywords
Electron spin resonance; Spin density; IGZO; Thin-film transistor; Positive gate bias temperature stress; Negative gate bias temperature illumination; stress;
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