Journal of information and communication convergence engineering

The Korea Institute of Information and Commucation Engineering (한국정보통신학회)
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Device Characteristics and Hot Carrier Lifetime Characteristics Shift Analysis by Carbon Implant used for Vth Adjustment

  • Mun, Seong-Yeol (Department of Foundries FAB, Globalfoundries Silicon Partners Pte. Ltd.) ;
  • Kang, Seong-Jun (Department of Electrical and Semiconductor Engineering, Chonnam National University) ;
  • Joung, Yang-Hee (Department of Electrical and Semiconductor Engineering, Chonnam National University)
  • Received : 2013.04.03
  • Accepted : 2013.08.09
  • Published : 2013.12.31
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Abstract

In this paper, a carbon implant is investigated in detail from the perspectives of performance advantages and side effects for the thick n-type metal-oxide-semiconductor field-effect transistor (n-MOSFET). Threshold voltage ($V_{th}$) adjustment using a carbon implant significantly improves the $V_{th}$ mismatch performance in a thick (3.3-V) n-MOS transistor. It has been reported that a bad mismatch occurs particularly in the case of 0.11-${\mu}m$ $V_{th}$ node technology. This paper investigates a carbon implant process as a promising candidate for the optimal $V_{th}$ roll-off curve. The carbon implant makes the $V_{th}$ roll-off curve perfectly flat, which is explained in detail. Further, the mechanism of hot carrier injection lifetime degradation by the carbon implant is investigated, and new process integration involving the addition of a nitrogen implant in the lightly doped drain process is offered as its solution. This paper presents the critical side effects, such as Isub increases and device performance shifts caused by the carbon implant and suggests an efficient method to avoid these issues.

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References

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