• 한국전기전자재료학회논문지
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• 제26권12호
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• pp.867-871
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• 2013

The Ti adhesion layers were deposited onto the glass substrate for transparent capacitors using $Bi_2Mg_{2/3}Nb_{4/3}O_7$ (BMNO) dielectric thin films. Graphene was transferred onto the Ti/glass substrate after growing onto the Ni/$SiO_2$/Si using rapid-thermal pulse CVD (RTPCVD). The BMNO dielectric thin films were investigated for the microstructure, dielectric and leakage properties in the case of capacitors with and without Ti adhesion layers. Leakage current and dielectric properties were strongly dependent on the Ti adhesion layers grown for graphene bottom electrode.

• 전자공학회논문지A
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• 제31A권8호
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• pp.53-61
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• 1994

Intermetallic dielectric layer was formed by using SiO$_2$/SOG/SiO$_2$ for aluminum based dual-metal interconnection process and its electric characteristics were evaluated. The dielectric layer was in the cost and facility point of view more useful than the insulator that was formed by etch-back process. The planarity by using SOG process was about 40% higher than that of the insulator by the CVD process. When SiO$_2$ films were deposited by the PECVD process the Al hillock formation during the next process was restrained bucause the intermetalic insulator was made at low temperature. The leakage current was 1${\times}10^{7}~1{\times}10^{-8}A/cm^{2}$ at the electric field of 10$^{5}$V/cm and breakdown filed was 4.5${\times}10^{6}~7{\times}10^{6}A/cm$. So we had confirmed that siloxane SOG was very useful for intermetallic layer material.

• 한국전기전자재료학회논문지
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• 제22권2호
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• pp.101-106
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• 2009

In this paper, Thin films of $HfO_2$/Hf were deposited on p-type wafer by Atomic Layer Deposition (ALD). We studied the electrical and material characteristics of $HfO_2$/Hf/Si MOS capacitor depending on thickness of Hf metal layer. $HfO_2$ films were deposited using TEMAH and $O_3$ at $350^{\circ}C$. Samples were then annealed using furnace heating to $500^{\circ}C$. Round-type MOS capacitors have been fabricated on Si substrates with $2000\;{\AA}$-thick Pt top electrodes. The composition rate of the dielectric material was analyzed using TEM (Transmission Electron Microscopy), XRD (X-ray Diffraction) and XPS (X-ray Photoelectron Spectroscopy). Also the capacitance-voltage (C-V), conductance-voltage (G-V), and current-voltage (I-V) characteristics were measured. We calculated the density of oxide trap charges and interface trap charges in our MOS device. At the interface between $HfO_2$ and Si, both Hf-Si and Hf-Si-O bonds were observed, instead of Si-O bond. The sandwiched Hf metal layer suppressed the growing of $SiO_x$ layer so that $HfSi_xO_y$ layer was achieved. And finally, the generation of both oxide trap charge and interface trap charge in $HfO_2$ film was reduced effectively by using Hf metal layer.

• 한국세라믹학회지
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• 제40권2호
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• pp.198-205
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• 2003

R.F. Magnetron Sputtering법을 이용하여 Pt/Ti/ $SiO_2$/Si기판 위에 seed-layers와 $Ba_{0.66}$S $r_{0.34}$Ti $O_3$박막을 제조하였다. 다양한 기판온도에 따른 BST 박막의 전기적인 특성(정전용량과 누설전류)과 seed-layer층이 BST 박막에 미치는 영향을 조사하였다. BST 박막은 seed-layer층을 삽입함으로써 박막의 결정성이 향상되었고, 박막의 기판온도(결정화온도)도 상당히 낮출 수 있었다. 순수한 BST에 비하여 seed-layer를 삽입한 BST는 높은 유전상수와 낮은 유전손실 및 낮은 누설전류를 가지는 우수한 전기적 특성을 나타내었다. BST 박막의 전기적 특성은 기판온도에 따라 영향을 받고, seed-layer에 의해 향상됨을 알 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.263-266
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• 2001

In this paper, we investigated dielectric properies for BST thin films that was deposited on MgO/Si substrates using RF magnetron sputtering. In here, MgO film was used to perform that a diffusion b arrier between the BST film and Si substrate and a buffer layer to assist the BST film growth. A d eposition condition for MgO films was RF Power of 50W, substrate temperature of room temperature and the working gas ratio of Ar:O$_2$ were varied from 90:10 to 60:47. Finally we manufactured the cap acitor of Al/BST/MgO/Si/Al structure to know electrical properties of this capacitor through I-V, C-V measurement. In the results, C-V aha racteristic curves was shown a ferroelectric property so we measured P-E. A remanent poliazation and coerceive electric field was present 2$\mu$C/cm$^2$ and -27kV/cm respectively at Ar:O$_2$=90:10. And a va clue of dielectric constant was 86 at Ar:02=90:10.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2013년도 춘계학술대회 논문집
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• pp.97-97
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• 2013

We present a comprehensive study on the integration of h-BN with silicon MOSFET. Temperature dependent mobility modeling is used to discern the effects of top-gate dielectric on carrier transport and identify limiting factors of the system. The result indicates that coulomb scattering and surface roughness scattering are the dominant scattering mechanisms for silicon MOSFETs at relatively low temperature. Interposing a layer of h-BN between $SiO_2$ and Si effectively weakens coulomb scattering by separating carriers in the silicon inversion layer from the charged centers as 2-dimensional h-BN is relatively inert and is expected to be free of dangling bonds or surface charge traps owing to the strong, in-plane, ionic bonding of the planar hexagonal lattice structure, thus leading to a significant improvement in mobility relative to undecorated system. Furthermore, the atomically planar surface of h-BN also suppresses surface roughness scattering in this Si MOSFET system, resulting in a monotonously increasing mobility curve along with gate voltage, which is different from the traditional one with a extremum in a certain voltage. Alternatively, high-k dielectrics can lead to enhanced transport properties through dielectric screening. Modeling indicates that we can achieve even higher mobility by using h-BN decorated $HfO_2$ as gate dielectric in silicon MOSFETs instead of h-BN decorated $SiO_2$.

• 한국결정성장학회지
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• 제11권1호
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• pp.38-42
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• 2001

Electric and dielectric(Ba,Sr)$TiO_3$[BST] thin films for emtal-Insulator-Semiconductor(MIS) capacitors have been studied. BST thin films wre deposted on p-Si(100) substrates bythe RF magnetron sputtering with tempratue range of 500~$600^{\circ}C$. The dielectric properties of MIS capacitors consisting of Al/BST/$SiO_2$/Si sandwich structure were evaluated ot redcue the leakage current density. The charge state densities of the MIS capacitors were determined by high frequency (1 MHz) C-V measurement. In order to reduce the leakage current in MIS capacitor, high quality $SiO_2$ layer was deposited on bare p-Si substrate. Depending on the oxygen pressure and substrate temperature both positive and negative polarities of effective oxide charge in the MIS capacitors were evaluated. It is considered that the density of electronic states, generated at the BST/$SiO_2$/p-Si interface due to the asymmetric structure within BST/$SiO_2$/Si structure, and the oxygen vacancy content has influence on the behavior of oxide charge.

• 한국진공학회지
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• 제10권1호
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• pp.27-30
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• 2001

절연보호막 처리된 Al-1%Si 박막배선에서 DC와 PDC 조건하에서의 Electromigration 현상에 관하여 조사하였다. $SiO_2$와 PSG/$SiO_2$ 절연보호막 층을 갖는 박막배선은 표준 사진식각 공정으로 제작되었고, 테스트라인 길이는 100, 400, 800, 1200, 1600 $\mu\textrm{m}$이다. Al-l%Si 박막배선에 고정된 전류밀도 $1.19\times10^7\textrm{A/cm}^2$의 DC와 duty factor가 0.5인 1Hz의 주파수에 고정된 전류밀도 $1.19\times10^7\textrm{A/cm}^2$의 PDC를 인가하였다. Electromigration 테스트에서 PSG/$SiO_2$ 절연보호막 시편의 Electromigration 저항성이 $SiO_2$ 절연보호막 시편보다 우수함을 알 수 있었다. PDC 에서 박막 배선의 수명이 DC 보다 2-4배 정도 길게 나타났으며, 박막 배선의 길이가 증가 할 수록 수명이 감소하다가 임계길이 이상에서 포화되는 경향을 보인다. Electromigration에 의한 결함 형태로는 전기적 개방을 야기시키는 보이드와 전기적 단락을 야기시키는 힐록이 지배적이다.

• E2M - 전기 전자와 첨단 소재
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• 제8권2호
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• pp.129-135
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• 1995

SiO thin films are deposited by evaporator the refractive index of wave length, photon energy and the absorptive rate of these films are measured by spectroscopic ellipsometer. It is derived the absorptive rate and permitivity of SiO thin films from the equations that calculating the refractive index. And the result show good agreement with the calculated values and experimental values. As a result, the wave length of light is increased in the condition that the angle of incidence is fixed on SiO thin film, the basic absorption and the absorption impurities are found in the low wave length (below 450 nm in this study) and the reflective absorption and conductive absorption is increased by the form of exponential function over the low wavelength. The absorptive rate is increased by increased the angle of incidence and thickness of SiO film for the insulating layer. As the thickness of SiO film is increased, the value of complex permitivity is decreasing and as wave length of incidence is increased., the value of dielectric is linearly increasing.

• E2M - 전기 전자와 첨단 소재
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• 제7권2호
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• pp.145-151
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• 1994

The multi-dielectric layer SiOz/Si3N4/SiO2(ONO) is used to scale down the memory device. In this paper, the change of composition in ONO layer due to the process condition and the conduction mechanism are observed. The composition of the oxide film grown through the oxidation of nitride film is analyzed using auger electron spectroscopy(AES). AES results show that oxygen concentration increases at the interface between oxide and nitride layers as the thickness -of the top oxide layer increases. Results of I-V measurement show that the insulating properties improve as the thickness of the top oxide layer increases. But when the thickness of the nitride layer decreases below 63.angs, insulating peoperties of film 28.angs. of top oxide and film 35.angs. turn over showing that insulating property of film 28.angs. of top oxide is better than that of film 35.angs. of top oxide. This phenomenon of turn over is thought as the result of generation of surface state due to oxygen flow into nitride during oxidation process. As the thickness of the top oxide and nitride increases, the electrical breakdown field increases, but when the thickness of top oxide reaches 35.angs, the same phenomenon of turn over occurs. Optimum film thickness for scaled multi-layer dielectric of memory device SONOS is estimated to be 63.angs. of nitride layer and 28.angs. of top oxide layer. In this case, maximum electrical breakdown field and leakage current are 18.5[MV/cm] and $8{\times}{10^-12}$[A], respectively.