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http://dx.doi.org/10.4191/KCERS.2003.40.2.198

Electrical Properties of Ba0.66Sr0.34TiO3 Thin Films Fabricated by a Seed-layer Process  

최덕영 (부산대학교 무기재료공학과)
박철호 (부산대학교 무기재료공학과)
손영국 (부산대학교 무기재료공학과)
Publication Information
Journal of the Korean Ceramic Society / v.40, no.2, 2003 , pp. 198-205 More about this Journal
Abstract
$Ba_{0.66}Sr_{0.34}TiO_3$ thin films and seed-layers were deposited on $Pt/Ti/SiO_2/Si$substrate by R.F. magnetron sputtering method. Effects of various substrate temperature conditions on electrical properties (such as capacitance and leakage current) of BST thin films were studied. The effect of seed-layer was also studied. When seed-layer was inserted between BST and Pt, the crystallization of the BST thin films was considerably improved and the processing temperature was lowered. Compared to the pure BST thin films, dielectric constant, dielectric loss, and leakage current of BST thin films deposited on the seed-layer were considerably improved. It could be revealed that electrical properties are influenced by the substrate temperatures of BST thin films and are enhanced by the seed-layer.
Keywords
(${Ba_{0.66}}{Sr_{0.34}}{TiO_3}$_BST; Thin film; Ferroelectric properties; Seed-layer;
Citations & Related Records
Times Cited By KSCI : 4  (Citation Analysis)
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